AU2773001A - Enhanced faraday cup for diagnostic measurements in an ion implanter - Google Patents

Enhanced faraday cup for diagnostic measurements in an ion implanter

Info

Publication number
AU2773001A
AU2773001A AU27730/01A AU2773001A AU2773001A AU 2773001 A AU2773001 A AU 2773001A AU 27730/01 A AU27730/01 A AU 27730/01A AU 2773001 A AU2773001 A AU 2773001A AU 2773001 A AU2773001 A AU 2773001A
Authority
AU
Australia
Prior art keywords
ion implanter
faraday cup
diagnostic measurements
enhanced
enhanced faraday
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27730/01A
Other languages
English (en)
Inventor
Donald W Berrian
John W Vanderpot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proteros LLC
Original Assignee
MULTILEVEL METALS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MULTILEVEL METALS Inc filed Critical MULTILEVEL METALS Inc
Publication of AU2773001A publication Critical patent/AU2773001A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AU27730/01A 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter Abandoned AU2773001A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17510200P 2000-01-07 2000-01-07
US60175102 2000-01-07
PCT/US2001/000579 WO2001051183A1 (fr) 2000-01-07 2001-01-08 Chambre d'ionisation de faraday amelioree permettant de diagnostiquer des mesures dans un implanteur d'ions

Publications (1)

Publication Number Publication Date
AU2773001A true AU2773001A (en) 2001-07-24

Family

ID=22638898

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27730/01A Abandoned AU2773001A (en) 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter

Country Status (2)

Country Link
AU (1) AU2773001A (fr)
WO (1) WO2001051183A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10329388B4 (de) 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
AU2003274679A1 (en) * 2003-08-01 2005-02-15 Secretary, Department Of Atomic Energy Device for measuring and quantitative profiling of charged particle beams
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7064340B1 (en) 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7417242B2 (en) * 2005-04-01 2008-08-26 Axcelis Technologies, Inc. Method of measuring ion beam position
US8008636B2 (en) * 2008-12-18 2011-08-30 Axcelis Technologies, Inc. Ion implantation with diminished scanning field effects
FR2968393B1 (fr) * 2010-12-07 2015-03-06 Techniques Metallurgiques Avancees Techmeta Dispositif et procede pour analyser la densite d'un faisceau de particules chargees.
CN103715048B (zh) * 2013-12-16 2016-05-18 中国电子科技集团公司第四十八研究所 一种离子注入机竖直方向离子束角度测控系统及测量方法
CN105895479B (zh) * 2014-12-18 2019-04-23 北京中科信电子装备有限公司 一种离子束检测装置
CN111722263B (zh) * 2020-06-15 2022-08-23 电子科技大学 一种用于大功率电子束束斑测量的法拉第杯设计

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198676A (en) * 1991-09-27 1993-03-30 Eaton Corporation Ion beam profiling method and apparatus
US5738985A (en) * 1993-04-02 1998-04-14 Ribogene, Inc. Method for selective inactivation of viral replication
US6175416B1 (en) * 1996-08-06 2001-01-16 Brown University Research Foundation Optical stress generator and detector
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material

Also Published As

Publication number Publication date
WO2001051183A1 (fr) 2001-07-19

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase