AU2773001A - Enhanced faraday cup for diagnostic measurements in an ion implanter - Google Patents
Enhanced faraday cup for diagnostic measurements in an ion implanterInfo
- Publication number
- AU2773001A AU2773001A AU27730/01A AU2773001A AU2773001A AU 2773001 A AU2773001 A AU 2773001A AU 27730/01 A AU27730/01 A AU 27730/01A AU 2773001 A AU2773001 A AU 2773001A AU 2773001 A AU2773001 A AU 2773001A
- Authority
- AU
- Australia
- Prior art keywords
- ion implanter
- faraday cup
- diagnostic measurements
- enhanced
- enhanced faraday
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24405—Faraday cages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17510200P | 2000-01-07 | 2000-01-07 | |
US60175102 | 2000-01-07 | ||
PCT/US2001/000579 WO2001051183A1 (fr) | 2000-01-07 | 2001-01-08 | Chambre d'ionisation de faraday amelioree permettant de diagnostiquer des mesures dans un implanteur d'ions |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2773001A true AU2773001A (en) | 2001-07-24 |
Family
ID=22638898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU27730/01A Abandoned AU2773001A (en) | 2000-01-07 | 2001-01-08 | Enhanced faraday cup for diagnostic measurements in an ion implanter |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2773001A (fr) |
WO (1) | WO2001051183A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10329388B4 (de) | 2003-06-30 | 2006-12-28 | Advanced Micro Devices, Inc., Sunnyvale | Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb |
DE10329383B4 (de) * | 2003-06-30 | 2006-07-27 | Advanced Micro Devices, Inc., Sunnyvale | Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors |
AU2003274679A1 (en) * | 2003-08-01 | 2005-02-15 | Secretary, Department Of Atomic Energy | Device for measuring and quantitative profiling of charged particle beams |
US6903350B1 (en) | 2004-06-10 | 2005-06-07 | Axcelis Technologies, Inc. | Ion beam scanning systems and methods for improved ion implantation uniformity |
US7064340B1 (en) | 2004-12-15 | 2006-06-20 | Axcelis Technologies, Inc. | Method and apparatus for ion beam profiling |
US7417242B2 (en) * | 2005-04-01 | 2008-08-26 | Axcelis Technologies, Inc. | Method of measuring ion beam position |
US8008636B2 (en) * | 2008-12-18 | 2011-08-30 | Axcelis Technologies, Inc. | Ion implantation with diminished scanning field effects |
FR2968393B1 (fr) * | 2010-12-07 | 2015-03-06 | Techniques Metallurgiques Avancees Techmeta | Dispositif et procede pour analyser la densite d'un faisceau de particules chargees. |
CN103715048B (zh) * | 2013-12-16 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机竖直方向离子束角度测控系统及测量方法 |
CN105895479B (zh) * | 2014-12-18 | 2019-04-23 | 北京中科信电子装备有限公司 | 一种离子束检测装置 |
CN111722263B (zh) * | 2020-06-15 | 2022-08-23 | 电子科技大学 | 一种用于大功率电子束束斑测量的法拉第杯设计 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198676A (en) * | 1991-09-27 | 1993-03-30 | Eaton Corporation | Ion beam profiling method and apparatus |
US5738985A (en) * | 1993-04-02 | 1998-04-14 | Ribogene, Inc. | Method for selective inactivation of viral replication |
US6175416B1 (en) * | 1996-08-06 | 2001-01-16 | Brown University Research Foundation | Optical stress generator and detector |
US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
-
2001
- 2001-01-08 WO PCT/US2001/000579 patent/WO2001051183A1/fr active Application Filing
- 2001-01-08 AU AU27730/01A patent/AU2773001A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2001051183A1 (fr) | 2001-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |