AU2620888A - Bipolar transistor devices and methods of making the same - Google Patents
Bipolar transistor devices and methods of making the sameInfo
- Publication number
- AU2620888A AU2620888A AU26208/88A AU2620888A AU2620888A AU 2620888 A AU2620888 A AU 2620888A AU 26208/88 A AU26208/88 A AU 26208/88A AU 2620888 A AU2620888 A AU 2620888A AU 2620888 A AU2620888 A AU 2620888A
- Authority
- AU
- Australia
- Prior art keywords
- making
- methods
- same
- bipolar transistor
- transistor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8726367 | 1987-11-11 | ||
GB878726367A GB8726367D0 (en) | 1987-11-11 | 1987-11-11 | Cmos devices |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2620888A true AU2620888A (en) | 1989-06-01 |
Family
ID=10626764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU26208/88A Abandoned AU2620888A (en) | 1987-11-11 | 1988-11-11 | Bipolar transistor devices and methods of making the same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0346409A1 (en) |
JP (1) | JPH02502956A (en) |
AU (1) | AU2620888A (en) |
GB (2) | GB8726367D0 (en) |
WO (1) | WO1989004555A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
US4283236A (en) * | 1979-09-19 | 1981-08-11 | Harris Corporation | Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping |
JPS5931052A (en) * | 1982-08-13 | 1984-02-18 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JPS61164262A (en) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | Semiconductor device |
-
1987
- 1987-11-11 GB GB878726367A patent/GB8726367D0/en active Pending
-
1988
- 1988-11-11 GB GB8915454A patent/GB2219137B/en not_active Expired - Fee Related
- 1988-11-11 AU AU26208/88A patent/AU2620888A/en not_active Abandoned
- 1988-11-11 JP JP50886688A patent/JPH02502956A/en active Pending
- 1988-11-11 WO PCT/GB1988/000996 patent/WO1989004555A1/en not_active Application Discontinuation
- 1988-11-11 EP EP19880909569 patent/EP0346409A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0346409A1 (en) | 1989-12-20 |
JPH02502956A (en) | 1990-09-13 |
GB2219137B (en) | 1990-10-24 |
GB2219137A (en) | 1989-11-29 |
WO1989004555A1 (en) | 1989-05-18 |
GB8915454D0 (en) | 1989-08-23 |
GB8726367D0 (en) | 1987-12-16 |
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