AU2620888A - Bipolar transistor devices and methods of making the same - Google Patents

Bipolar transistor devices and methods of making the same

Info

Publication number
AU2620888A
AU2620888A AU26208/88A AU2620888A AU2620888A AU 2620888 A AU2620888 A AU 2620888A AU 26208/88 A AU26208/88 A AU 26208/88A AU 2620888 A AU2620888 A AU 2620888A AU 2620888 A AU2620888 A AU 2620888A
Authority
AU
Australia
Prior art keywords
making
methods
same
bipolar transistor
transistor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU26208/88A
Inventor
Peter Fred Blomley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Logic Europe Ltd
Original Assignee
LSI Logic Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Europe Ltd filed Critical LSI Logic Europe Ltd
Publication of AU2620888A publication Critical patent/AU2620888A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
AU26208/88A 1987-11-11 1988-11-11 Bipolar transistor devices and methods of making the same Abandoned AU2620888A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8726367 1987-11-11
GB878726367A GB8726367D0 (en) 1987-11-11 1987-11-11 Cmos devices

Publications (1)

Publication Number Publication Date
AU2620888A true AU2620888A (en) 1989-06-01

Family

ID=10626764

Family Applications (1)

Application Number Title Priority Date Filing Date
AU26208/88A Abandoned AU2620888A (en) 1987-11-11 1988-11-11 Bipolar transistor devices and methods of making the same

Country Status (5)

Country Link
EP (1) EP0346409A1 (en)
JP (1) JPH02502956A (en)
AU (1) AU2620888A (en)
GB (2) GB8726367D0 (en)
WO (1) WO1989004555A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
JPS5931052A (en) * 1982-08-13 1984-02-18 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61164262A (en) * 1985-01-17 1986-07-24 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
EP0346409A1 (en) 1989-12-20
JPH02502956A (en) 1990-09-13
GB2219137B (en) 1990-10-24
GB2219137A (en) 1989-11-29
WO1989004555A1 (en) 1989-05-18
GB8915454D0 (en) 1989-08-23
GB8726367D0 (en) 1987-12-16

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