AU2020104147A4 - Apparatus for starting polycrystalline silicon CVD reactor - Google Patents

Apparatus for starting polycrystalline silicon CVD reactor Download PDF

Info

Publication number
AU2020104147A4
AU2020104147A4 AU2020104147A AU2020104147A AU2020104147A4 AU 2020104147 A4 AU2020104147 A4 AU 2020104147A4 AU 2020104147 A AU2020104147 A AU 2020104147A AU 2020104147 A AU2020104147 A AU 2020104147A AU 2020104147 A4 AU2020104147 A4 AU 2020104147A4
Authority
AU
Australia
Prior art keywords
cvd reactor
starting
polycrystalline silicon
control mechanism
mechanical arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
AU2020104147A
Inventor
Wenji CHEN
Tao Yang
Yunsong Zhao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xinjiang Daqo New Energy Co Ltd
Original Assignee
Xinjiang Daqo New Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xinjiang Daqo New Energy Co Ltd filed Critical Xinjiang Daqo New Energy Co Ltd
Priority to AU2020104147A priority Critical patent/AU2020104147A4/en
Application granted granted Critical
Publication of AU2020104147A4 publication Critical patent/AU2020104147A4/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/6408—Supports or covers specially adapted for use in microwave heating apparatus
    • H05B6/6411—Supports or covers specially adapted for use in microwave heating apparatus the supports being rotated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/642—Cooling of the microwave components and related air circulation systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Silicon Compounds (AREA)

Abstract

The present invention provides an apparatus for starting a polycrystalline silicon CVD reactor. The apparatus comprises a supporting body (1), a microwave generator (4) and a control mechanism (5). The supporting body is provided with a traveling mechanism (2) for supporting the supporting body to move. The supporting body is provided with a mechanical arm (3). The microwave generator is arranged on the mechanical arm and is capable of being driven by the mechanical arm to move, and the microwave generator is provided with an emission port, the emission port being used for corresponding to a sight glass port of the CVD reactor. The control mechanism is arranged on the supporting body, connected to the microwave generator and used for controlling the microwave generator. The control mechanism is connected to the mechanical arm and used for controlling the mechanical arm. The control mechanism is provided with a water pipe for inflow and outflow of cooling water, the water pipe being provided with a movable joint. The control mechanism is provided with an air flow port for injecting air, the air flow port being provided with a quick joint, and the control mechanism is provided with a power cable for being connected to a power supply. Figure 1 2/2 3 Fig.2

Description

2/2
3
Fig.2
APPARATUS FOR STARTING POLYCRYSTALLINE SILICON CVD REACTOR TECHNICAL FIELD
[0001] The present application relates to the technical field of polycrystalline silicon production, and in particular to an apparatus for starting a polycrystalline silicon CVD reactor.
BACKGROUND
[0002] A filament in the polycrystalline silicon production belongs to a semiconductor, which is very high in specific resistance under a normal temperature, the specific resistance of the filament changes obviously as the temperature changes, and along with increase of the temperature, the specific resistance of the filament is decreased gradually, which means that electric conduction capacity of the filament is enhanced gradually. Polycrystalline silicon is produced through steps of starting to enable the high-resistance filament to be preheated, electrically conducted and heated, then undergo chemical vapor deposition and grow.
[0003] In the prior art, there are two solutions for starting, the first solution is to overcome cold resistance of a filament rod and apply high voltage to the pure filament rod to enable a current to pass through the filament rod forcibly, as the temperature rises, the specific resistance is lowered gradually, a medium/low control power supply is switched to after a certain temperature, and this is high-voltage starting. Although being direct, this mode has disadvantages that a high-voltage control apparatus is complex, and a heating starting procedure is also complex, resulting in a remarkable increase of production cost; and high voltage breakdown is limited by an electrode insulator, and voltage cannot be increased (usually controlled to 3500-7500 V only), resulting in that starting time is long (about 3 h in average), on-line time of a CVD reactor is seriously influenced and production is reduced. Not only is staring power consumption increased, but also the electric insulator is often broken down, which increases a maintenance workload and a maintenance cost. The second solution is to use external heating modes such as graphite heating, plasma heating and halogen lamp heating for heating the CVD reactor to 300°C or so, and output medium voltage through a CVD power supply to enable the filament to be conducted so as to complete starting, and after that, heating is continuously conducted to conduct chemical vapor deposition to complete deposition and growth. This starting mode has defects of being complex in operation, long in starting time, low in efficiency and low in starting success rate, influencing silicon purity, being complex in CVD apparatuses, etc.
SUMMARY OF THE INVENTION
[0004] It is an object of the present invention to overcome or ameliorate at least one of the
disadvantages of the prior art, or to provide a useful alternative.
[0005] In view of this, in accordance with one preferred form, the present application
provides an apparatus for starting a polycrystalline silicon CVD reactor, and mainly aims to
shorten starting time and improve production efficiency.
[0006] According to one aspect of the present invention, there is provided an apparatus for
starting a polycrystalline silicon CVD reactor, wherein the apparatus comprises a supporting
body, a microwave generator and a control mechanism; wherein the supporting body is provided with a traveling mechanism for supporting the supporting body to move; the supporting body is provided with a mechanical arm;
the microwave generator is arranged on the mechanical arm and is capable of being
driven by the mechanical arm to move, and the microwave generator is provided with an
emission port, the emission port being used for corresponding to a sight glass port of the CVD
reactor; the control mechanism is arranged on the supporting body, connected to the microwave generator and used for controlling the microwave generator; the control mechanism is connected to the mechanical arm and used for controlling the mechanical arm; the control mechanism is provided with a water pipe for inflow and outflow of cooling water, the water pipe being provided with a movable joint; the control mechanism is provided with an air flow port for injecting air, the air flow port being provided with a quick joint; and the control mechanism is provided with a power cable for being connected to a power supply.
[0007] In order to achieve the above object, the present application mainly provides the
following technical solution:
the embodiments of the present application provide an apparatus for starting a
polycrystalline silicon CVD reactor, wherein the apparatus includes a supporting body, a
microwave generator and a control mechanism;
wherein the supporting body is provided with a traveling mechanism for supporting
the supporting body to move;
the supporting body is provided with a mechanical arm;
the microwave generator is arranged on the mechanical arm and is capable of being
driven by the mechanical arm to move, and the microwave generator is provided with an
emission port, the emission port being used for corresponding to a sight glass port of the CVD
reactor;
the control mechanism is arranged on the supporting body, connected to the
microwave generator and used for controlling the microwave generator;
the control mechanism is connected to the mechanical arm and used for controlling
the mechanical arm;
the control mechanism is provided with a water pipe for inflow and outflow of cooling
water, the water pipe being provided with a movable joint;
the control mechanism is provided with an air flow port for injecting air, the air flow
port being provided with a quick joint; and
the control mechanism is provided with a power cable for being connected to a
power supply.
[0008] Furthermore, the apparatus further includes a driving mechanism;
wherein the driving mechanism is connected to the traveling mechanism and used
for driving the traveling mechanism; and the driving mechanism is connected to the control mechanism which is used for controlling the driving mechanism.
[0009] The apparatus for starting the polycrystalline silicon CVD reactor of the present
application at least has the following advantages of being capable of shortening the starting
time and improving the production efficiency.
[0010] Unless the context clearly requires otherwise, throughout the description and the
claims, the words "comprise", "comprising", and the like are to be construed in an inclusive
sense as opposed to an exclusive or exhaustive sense; that is to say, in the sense of
"including, but not limited to".
BRIEF DESCRIPTION OF FIGURES
[0011] Fig. 1 is a schematic diagram of an apparatus for starting a polycrystalline silicon
CVD reactor provided by the embodiments of the present application; and
[0012] Fig. 2 is a schematic diagram of the apparatus for starting the polycrystalline silicon
CVD reactor provided by the embodiments of the present application during operation.
DETAILED DESCRIPTION
[0013] As shown in Figs. 1 and 2, an apparatus for starting a polycrystalline silicon CVD
reactor provided by one embodiment of the present application includes a supporting body 1, a
microwave generator 4, and a control mechanism 5; wherein the supporting body 1 is of a
frame structure; the supporting body 1 may be formed by welding or fastening section steel;
the supporting body 1 is provided with a traveling mechanism 2 for supporting the supporting
body 1 to move; and the traveling mechanism 2 includes a traveling wheel, the traveling wheel
is connected to a driving mechanism in a transmission way and being capable of being driven
by the driving mechanism to rotate, and the traveling wheel being used for supporting the
supporting body 1 to move; the supporting body 1 is provided with a mechanical arm 3; the microwave generator
4 is arranged on the mechanical arm 3 and is capable of being driven by the mechanical arm 3
to move; the microwave generator 4 is connected to the mechanical arm 3 by means of a
fastener; the microwave generator 4 is provided with an emission port, the emission port being
used for corresponding to a sight glass port 6 of the CVD reactor 7; and the mechanical arm 3
is capable of moving the microwave generator 4 to the designated sight glass port 6 of the
CVD reactor 7, so as to preheat a filament in the CVD reactor 7 by means of the sight glass
port 6.
[0014] The control mechanism 5 is arranged on the supporting body 1, connected to the
microwave generator 4 and used for controlling the microwave generator 4; the control
mechanism 5 is connected to the mechanical arm 3 and used for controlling the mechanical
arm 3 and operating the mechanical arm 3 to move the microwave generator 4; and the control
mechanism 5 is provided with a water pipe for inflow and outflow of cooling water, the water
pipe being provided with a movable joint for being conveniently connected to an external water
source, the number of the water pipe being one, water pressure being 0.2-0.3 Mpa, and flow
being not less than 40 L/min. A waterway is connected by means of a hose, a joint is the
movable joint (G3/4 internal-thread pipe thread), an inner diameter of the hose is not less than
(p19, a proof pressure is not less than 1 Mpa, and a length of the hose is determined according
to an actual condition.
[0015] The control mechanism 5 is provided with an air flow port for injecting air, the air flow
port being provided with a quick joint for convenient connection; and the air flow port is used
for injecting the air into the control mechanism 5 to ensure micro-positive pressure, an air pipe
of 12*8 is used, a Mailer C-type quick joint (SF40+PH40) is used for connection, inlet wind
pressure is not less than 0.2 Mpa, and the length of the air pipe is determined according to an
actual condition; and
the control mechanism 5 is provided with a power cable for being connected to a
power supply. The power supply uses a three-phase four-wire system with AC 380 V and 35 kVA, and the cable is a copper-conductor flexible cable of 3*25 + 1*16; an aviation plug is used for being connected to the control mechanism 5, and the length of the cable is determined according to an actual condition; and in addition, a ground lead special for a microwave power supply is arranged, and the ground resistance is less than 3 0.
[0016] The apparatus for starting the polycrystalline silicon CVD reactor provided by the
embodiment of the present application is capable of shortening the starting time and improving
the production efficiency.
[0017] The apparatus for starting the polycrystalline silicon CVD reactor provided by one
embodiment of the present application is convenient to move, not each CVD reactor body 7
needs to be equipped with a corresponding set of microwave source, thereby saving
investment.
[0018] As the optimization of the above embodiment, the driving mechanism is further
included; wherein the driving mechanism is connected to the traveling mechanism 2 and used
for driving the traveling mechanism 2, the driving mechanism being an electric motor. The
driving mechanism is connected to the control mechanism 5 which is used for controlling the
driving mechanism, so as to control movement of the supporting body 1.
[0019] As the optimization of the above embodiment, the emission port is provided with a
protective member to separate the interior from the exterior of the microwave generator 4, so
as to protect the microwave generator 4. As a further optimization, the protective member is
made of glass and does not influence microwave emission.
[0020] As the optimization of the above embodiment, an outer wall of the emission port is
provided with a thermal insulation material to reduce heat loss in the CVD reactor body 7 when
the emission port is connected to the sight glass port 6 of the CVD reactor 7.
[0021] As the optimization of the above embodiment, the water pipe is the hose to be
conducive to a connection operation.
[0022] As the optimization of the above embodiment, the emission port is of a circular
truncated cone structure for convenient connection to the sight glass port 6 of the CVD reactor
body 7. As a further optimization, an included angle between an axis and a side surface of the
circular truncated cone structure is not less than 45 degrees, which is conducive to microwave
reflection of the emission port, so that a microwave reflected from the sight glass port 6 is
reflected back to the CVD reactor body 7 again. As a further optimization, an outer edge of the
emission port is provided with a magnet ring, which is conducive to attachment between the
emission port and the CVD reactor 7 and reduction of heat loss. As a further optimization, the
emission port is made of metal, which is convenient to take, and capable of reflecting the
microwave.
[0023] Basic properties of the microwave generally include penetrability, reflectivity and
absorptivity. Glass, plastic and porcelain allow the microwave to penetrate therethrough almost
without absorbing the microwave; water, food, silicon material, etc. may absorb the microwave
and be self-heated; and metal materials may reflect the microwave. The apparatus for starting
the polycrystalline silicon CVD reactor provided by one embodiment of the present application
is based on a microwave principle, and during implementation, a sight glass may be arranged
on a wall or a top portion of the CVD reactor, and may be used together with an existing sight
glass. The microwave is capable of penetrating through and entering the CVD reactor 7
smoothly; after the microwave enters the CVD reactor 7, a part of the microwave is projected
onto a surface of the filament and directly absorbed by the filament, the other part of the
microwave is projected onto the wall of the CVD reactor 7, and the microwave on the reactor
wall is reflected to the filament and absorbed by the filament secondarily, thereby enabling the
filament to be heated; and when the temperature in the CVD reactor 7 reaches a breakdown
temperature, a breakdown power supply is started to break the filament down, so that starting
is completed.
[0024] The apparatus for starting the polycrystalline silicon CVD reactor provided by one
embodiment of the present application preheats the high-resistance filament through the
microwave, which reduces the ratio of a filament breakdown voltage to resistance. Breakdown
time is shortened, an on-line rate of the CVD reactor 7 is improved, and single-reactor annual
production of the CVD reactor 7 is increased. The probability of breaking an electrode insulator
down is reduced, and maintenance cost is reduced. Due to reduction of the breakdown voltage
and shortening of the breakdown time, breakdown power consumption is saved. By means of
a closed breakdown mode, an impurity is prevented from being introduced in a breakdown
process, so as to ensure product quality.
[0025] According to the apparatus for starting the polycrystalline silicon CVD reactor
provided by one embodiment of the present application, the breakdown voltage is reduced by
about 70% compared with the prior art; a breakdown environment has a looser requirement,
breakdown may be conducted in a nitrogen environment or a hydrogen environment, and the
nitrogen environment is superior to the hydrogen environment; and the breakdown time is
shortened by 50%-80% compared with the prior art.

Claims (10)

1. An apparatus for starting a polycrystalline silicon CVD reactor, wherein the
apparatus comprises a supporting body, a microwave generator and a control mechanism; wherein the supporting body is provided with a traveling mechanism for supporting the supporting body to move; the supporting body is provided with a mechanical arm;
the microwave generator is arranged on the mechanical arm and is capable of being
driven by the mechanical arm to move, and the microwave generator is provided with an
emission port, the emission port being used for corresponding to a sight glass port of the CVD
reactor; the control mechanism is arranged on the supporting body, connected to the microwave generator and used for controlling the microwave generator; the control mechanism is connected to the mechanical arm and used for controlling the mechanical arm; the control mechanism is provided with a water pipe for inflow and outflow of cooling water, the water pipe being provided with a movable joint; the control mechanism is provided with an air flow port for injecting air, the air flow port being provided with a quick joint; and the control mechanism is provided with a power cable for being connected to a power supply.
2. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein the apparatus further comprises a driving mechanism; wherein the driving
mechanism is connected to the traveling mechanism and used for driving the traveling
mechanism; and the driving mechanism is connected to the control mechanism which is used for controlling the driving mechanism.
3. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein the emission port is provided with a protective member.
4. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
3, wherein the protective member is made of glass.
5. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein an outer wall of the emission port is provided with a thermal insulation material.
6. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein the water pipe is a hose.
7. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein the emission port is of a circular truncated cone structure.
8. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
7, wherein an included angle between an axis and a side surface of the circular truncated cone
structure is not less than 45 degrees.
9. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein an outer edge of the emission port is provided with a magnet ring.
10. The apparatus for starting the polycrystalline silicon CVD reactor according to claim
1, wherein the emission port is made of metal.
3
2 1 1/2
Fig.1
6 4
2 3 2/2
Fig.2 1
AU2020104147A 2020-12-17 2020-12-17 Apparatus for starting polycrystalline silicon CVD reactor Active AU2020104147A4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2020104147A AU2020104147A4 (en) 2020-12-17 2020-12-17 Apparatus for starting polycrystalline silicon CVD reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU2020104147A AU2020104147A4 (en) 2020-12-17 2020-12-17 Apparatus for starting polycrystalline silicon CVD reactor

Publications (1)

Publication Number Publication Date
AU2020104147A4 true AU2020104147A4 (en) 2021-03-04

Family

ID=74715977

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2020104147A Active AU2020104147A4 (en) 2020-12-17 2020-12-17 Apparatus for starting polycrystalline silicon CVD reactor

Country Status (1)

Country Link
AU (1) AU2020104147A4 (en)

Similar Documents

Publication Publication Date Title
AU2020104147A4 (en) Apparatus for starting polycrystalline silicon CVD reactor
CN114871377B (en) Forging furnace for metal processing
CN203474925U (en) High temperature continuous electrolysis experimental furnace with good sealing structure
CN106887370A (en) A kind of numerical control device for sealing high-temperature metal sealing-in high power xenon flashlamp
CN209537622U (en) A kind of vacuum reaction boiler tube of tubular type PECVD
CN105154978A (en) Ggalium arsenide polycrystal magnetic field growing furnace and growing method
CN213537296U (en) Starting device for polycrystalline silicon reduction furnace
CN107828958A (en) Post weld heat treatment branch stake tool and post weld heat treatment support meanss
CN109402604A (en) It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer
CN108103447A (en) A kind of self-styled leakproof low boiling point material thermal evaporation coating apparatus
CN112194137B (en) Starting device for polycrystalline silicon reduction furnace
CN208901908U (en) A kind of water cooling equipment for Czochralski furnace
CN215568000U (en) Low-temperature-resistant butterfly valve
CN112877768B (en) Guide cylinder for semiconductor crystal bar growth, growth device and growth method
CN115962108A (en) Variable-temperature-zone high-temperature superconducting plasma propeller system for space
US11879585B2 (en) Thermal insulation cabinet, and method for preparing same and refrigerator having same
WO2020216268A1 (en) Ultrasonic generator connecting structure, cleaning device, and alcoholic drink aging device
US20160002819A1 (en) Method for preparing solar grade silicon single crystal using czochralski zone melting method
CN205529005U (en) Organic material evaporation plant
CN202388109U (en) Inner hole welding gun head of quenching heat exchanger
CN211170960U (en) Temperature field for 60KG sapphire crystal growth
CN110078079A (en) A kind of electronic grade high-purity polycrystalline reduction starting device and starting method
CN206898560U (en) Super long type high temperature TIG robotic guns
CN108103448A (en) A kind of continuous low boiling point material thermal evaporation coating apparatus
CN219737781U (en) Satellite positioning device for commanding aviation

Legal Events

Date Code Title Description
FGI Letters patent sealed or granted (innovation patent)