CN109402604A - It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer - Google Patents
It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer Download PDFInfo
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- CN109402604A CN109402604A CN201910009717.5A CN201910009717A CN109402604A CN 109402604 A CN109402604 A CN 109402604A CN 201910009717 A CN201910009717 A CN 201910009717A CN 109402604 A CN109402604 A CN 109402604A
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- silicon carbide
- gas pipe
- vapor deposition
- chemical vapor
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 76
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000407 epitaxy Methods 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- 229910002804 graphite Inorganic materials 0.000 claims description 29
- 239000010439 graphite Substances 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000006698 induction Effects 0.000 claims description 12
- 235000004443 Ricinus communis Nutrition 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 240000000528 Ricinus communis Species 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000009423 ventilation Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 85
- 239000012495 reaction gas Substances 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 238000013022 venting Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 206010022000 influenza Diseases 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to new material technology fields, it specifically discloses a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, including mounting seat, vacuum pump and shell, enclosure interior upper and lower ends are respectively equipped with a heating plate, the heating plate of enclosure interior lower end is equipped with silicon carbide substrates, vacuum tube, second gas pipe and first gas pipe are successively respectively symmetrically equipped at left and right sides of hull outside from top to bottom, and is equipped with valve on vacuum tube, second gas pipe and first gas pipe.The present invention can flexibly control the open and-shut mode of vacuum tube, second gas pipe and first gas pipe by valve, and then it can be adjusted in real time according to actual chemical vapor deposition conditions, improve the flexibility of operation, it solves the problems, such as that the chemical vapor deposition unit for being traditionally used for production silicon carbide epitaxial wafer reduces operating flexibility since ventilation pipe is relatively simple, is conducive to the quality for improving the silicon carbide epitaxy flake products of preparation.
Description
Technical field
It is specifically a kind of for producing the chemical vapor deposition of silicon carbide epitaxial wafer the present invention relates to new material technology field
Device.
Background technique
With the continuous development of science and technology, the demand of semiconductor material is also being continuously increased in the market, wherein silicon carbide
Epitaxial wafer is with good characteristics such as its big forbidden bandwidth, high critical field strength and high heat conductance, in PFC power supply, photovoltaic, motor
The numerous areas such as control, mixing and pure electric automobile, railway transportation, smart grid, space flight and aviation and energy saving household electrical appliances obtain
It is widely applied.
It is prepared by the method that current silicon carbide epitaxy material mainly uses chemical vapor deposition, still, traditional chemical gas
The ventilation pipe of phase precipitation equipment is relatively simple, reduces the flexibility of operation.Therefore, it designs a kind of for producing outside silicon carbide
The chemical vapor deposition unit for prolonging piece, the problem of becoming current urgent need to resolve.
Summary of the invention
The purpose of the present invention is to provide a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, to solve
The problems mentioned above in the background art.
To achieve the above object, the invention provides the following technical scheme:
It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, including mounting seat, vacuum pump and setting exist
Shell above mounting seat, shell front are hinged with hermatic door, and enclosure interior upper and lower ends are respectively equipped with a heating plate, heating
Plate includes heating induction coil and is set in its external graphite linings, and the heating plate of enclosure interior lower end is equipped with for producing carbon
The silicon carbide substrates of SiClx epitaxial wafer, the hull outside left and right sides are successively respectively symmetrically equipped with vacuum tube, the second gas from top to bottom
Body pipe and first gas pipe, and valve, vacuum tube, second gas are equipped on vacuum tube, second gas pipe and first gas pipe
Pipe and first gas pipe are arranged with one respectively close to one end of shell to be connected in shell intracorporal communicating pipe, and the opening of communicating pipe is set
There is sieve, mounting seat is equipped with the vacuum pump for being vacuumized to shell；By heating plate to the cavity of enclosure interior
It is heated, can flexibly control the open and-shut mode of vacuum tube, second gas pipe and first gas pipe by valve, and then can be with
It is adjusted in real time according to actual chemical vapor deposition conditions, improves applicability, due to being provided with first gas Guan Yu
Two flues can be passed through different reaction gas simultaneously, can also according to the growing height of silicon carbide epitaxial wafer come from
First gas pipe is changed to second gas pipe and carries out being passed through reaction gas, improves the flexibility of operation.
As a further solution of the present invention: the material of the graphite linings is high purity graphite.
As a further solution of the present invention: the opening of the vacuum tube, second gas pipe and first gas pipe is all provided with
There is internal screw thread；It can be connect with external reaction gas conveyance conduit by internal screw thread.
As a further solution of the present invention: the communicating pipe is equipped with thermal insulation board；It can effectively be carried out by thermal insulation board
It is heat-insulated, reduce influence of the enclosure interior temperature to extraneous operating environment.
As a further solution of the present invention: graphite barrier ring is equipped on the right side of the silicon carbide substrates；Pass through graphite barrier
The stability for the reaction gas being passed through can be improved in ring, prevents turbulent flow and influences the growth of silicon carbide epitaxial wafer.
As a further solution of the present invention: the output end of the vacuum pump is connected to by connecting tube with vacuum tube.
As a further solution of the present invention: the shell lower end, which is equipped with, is used for heat-insulated heat insulation pedestal, under heat insulation pedestal
End is connect by multiple brackets with mounting seat upper end；By the cooperation of heat insulation pedestal and bracket, can effectively reduce in shell
Influence of portion's temperature to extraneous operating environment is conducive to the comfort level for improving operating environment.
As a further solution of the present invention: the mounting seat lower end is uniformly provided with multiple castors；It can be with by castor
Effectively improve the mobile flexibility of device.
The chemical vapor deposition unit for producing silicon carbide epitaxial wafer is in preparing silicon carbide epitaxy flake products
Application.
Compared with prior art, the beneficial effects of the present invention are:
The present invention is provided with vacuum tube, second gas pipe and first gas pipe, can flexibly control vacuum tube, second by valve
The open and-shut mode of flue and first gas pipe, and then can be adjusted in real time according to actual chemical vapor deposition conditions,
The flexibility for improving operation solves the chemical vapor deposition unit for being traditionally used for production silicon carbide epitaxial wafer due to ventilation
Pipeline is relatively simple and the problem of reduce operating flexibility, also effectively mentioned by vacuumizing for vacuum pump with the dust-proof of sieve
The reaction environment of high chemical vapor deposition is conducive to the quality for improving the silicon carbide epitaxy flake products of preparation.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment.
Fig. 1 is the structural schematic diagram for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer.
Fig. 2 is first gas pipe in the chemical vapor deposition unit for producing silicon carbide epitaxial wafer and second gas pipe
Structural schematic diagram.
Fig. 3 is the structural schematic diagram of heating plate in chemical vapor deposition unit for producing silicon carbide epitaxial wafer.
Fig. 4 illustrates for the cross-section structure of first gas pipe in the chemical vapor deposition unit for producing silicon carbide epitaxial wafer
Figure.
Fig. 5 is the schematic perspective view of communicating pipe in chemical vapor deposition unit for producing silicon carbide epitaxial wafer.
In figure: 1- mounting seat, 2- vacuum pump, 3- first gas pipe, 4- connecting tube, 5- second gas pipe, 6- vacuum tube,
7- thermal insulation board, 8- communicating pipe, 9- shell, 10- heating plate, 11- valve, 12- internal screw thread, 13- graphite barrier ring, 14- silicon carbide
Substrate, 15- heat insulation pedestal, 16- bracket, 17- castor, 18- heating induction coil, 19- graphite linings, 20- sieve.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Embodiment 1
Please refer to Fig. 1~5, it is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer in the embodiment of the present invention, it wraps
Mounting seat 1, vacuum pump 2 and the shell 9 that 1 top of mounting seat is set are included, 9 front of shell is hinged with hermatic door；
In order to solve to be traditionally used for the chemical vapor deposition unit of production silicon carbide epitaxial wafer since ventilation pipe is relatively simple
And the problem of reducing operating flexibility, the 9 inside upper and lower ends of shell are respectively equipped with a heating plate 10, the heating plate 10
Including heating induction coil 18 and it is set in its external graphite linings 19, the material of the graphite linings 19 is high purity graphite, is passed through
Heating induction coil 18 heats the cavity inside shell 9, while playing protection effect by graphite linings 19, effectively prevent
Heating induction coil 18 is contacted with the cavity inside shell 9, improves the reaction environment of chemical vapor deposition, the shell
The heating plate 10 of 9 interior lower ends is equipped with the silicon carbide substrates 14 for producing silicon carbide epitaxial wafer, left and right outside the shell 9
Two sides are successively respectively symmetrically equipped with vacuum tube 6, second gas pipe 5 and first gas pipe 3, the vacuum tube 6, second from top to bottom
It is equipped with valve 11 on flue 5 and first gas pipe 3, vacuum tube 6, second gas pipe 5 can flexibly be controlled by valve 11
It with the open and-shut mode of first gas pipe 3, and then can be adjusted, be improved in real time according to actual chemical vapor deposition conditions
Applicability, and then improve the flexibility of operation；
Further, the vacuum tube 6, second gas pipe 5 and first gas pipe 3 are arranged with one respectively close to one end of shell 9
Communicating pipe 8 in shell 9 is connected to, and the opening of the communicating pipe 8 is equipped with sieve 20, and the material of the sieve 20 is high temperature resistant
Material, by sieve 20 can be effectively prevented external dust vacuumize and in venting process enter shell 9 in influence silicon carbide
The generation of epitaxial wafer；
Further, the opening of the vacuum tube 6, second gas pipe 5 and first gas pipe 3 is equipped with internal screw thread 12, passes through
Internal screw thread 12 can be connect with external reaction gas conveyance conduit, pass through the first gas pipe 3 and second gas in 9 left side of shell
Pipe 5 carries out being passed through reaction gas, carries out discharge reaction gas by the first gas pipe 3 and second gas pipe 5 on 9 right side of shell,
Be conducive to improve the stability of reaction gas, simultaneously as being provided with first gas pipe 3 and second gas pipe 5, can carry out same
When be passed through different reaction gas, second can also be changed to from first gas pipe 3 according to the growing height of silicon carbide epitaxial wafer
Flue 5 carries out being passed through reaction gas, improves the flexibility of operation；
Further, the communicating pipe 8 is equipped with thermal insulation board 7, can be effectively thermally shielded by thermal insulation board 7, reduces in shell 9
Influence of portion's temperature to extraneous operating environment is equipped with graphite barrier ring 13 on the right side of the silicon carbide substrates 14, passes through graphite barrier
The stability for the reaction gas being passed through can be improved in ring 13, prevents turbulent flow and influences the growth of silicon carbide epitaxial wafer, described
13 surface of graphite barrier ring is coated with silicon carbide, can prevent to spread in cavity of the impurity into shell 9 in graphite barrier ring 13,
Be conducive to improve the reaction environment of chemical vapor deposition；
Further, the mounting seat 1 is equipped with the vacuum pump 2 for being vacuumized to shell 9, specifically, described true
Sky pump 2 is the HP vacuum pump series of German Lenno, can be vacuumized to shell 9 by vacuum pump 2, is conducive to improve chemistry
The reaction environment of vapor deposition processes；
Specifically, the output end of the vacuum pump 2 is connected to by connecting tube 4 with vacuum tube 6, it can be to shell 9 by vacuum pump 2
It is inside vacuumized, and then effectively improves the reaction environment of chemical vapor deposition, be conducive to the silicon carbide epitaxial wafer for improving preparation
The quality of product；
Further, 9 lower end of shell, which is equipped with, is used for heat-insulated heat insulation pedestal 15, and 15 lower end of heat insulation pedestal passes through multiple
Bracket 16 is connect with 1 upper end of mounting seat, by the cooperation of heat insulation pedestal 15 and bracket 16, can be effectively reduced inside shell 9
Influence of the temperature to extraneous operating environment is conducive to the comfort level for improving operating environment；
Further, 1 lower end of mounting seat is uniformly provided with multiple castors 17, can effectively improve device by castor 17
Mobile flexibility；
Part is not directed in the device to be the same as those in the prior art or can be realized by using the prior art.
In the present embodiment, the chemical vapor deposition unit for producing silicon carbide epitaxial wafer is being prepared outside silicon carbide
Prolong the application in flake products.
Embodiment 2
Please refer to Fig. 1~5, it is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer in the embodiment of the present invention, it wraps
Mounting seat 1, vacuum pump 2 and the shell 9 that 1 top of mounting seat is set are included, 9 front of shell is hinged with hermatic door；
In order to solve to be traditionally used for the chemical vapor deposition unit of production silicon carbide epitaxial wafer since ventilation pipe is relatively simple
And the problem of reducing operating flexibility, the 9 inside upper and lower ends of shell are respectively equipped with a heating plate 10, the heating plate 10
Including heating induction coil 18 and it is set in its external graphite linings 19, the heating plate 10 of 9 interior lower end of shell is equipped with
For producing the silicon carbide substrates 14 of silicon carbide epitaxial wafer, the 9 outside left and right sides of shell is from top to bottom successively respectively symmetrically
Equipped with vacuum tube 6, second gas pipe 5 and first gas pipe 3, on the vacuum tube 6, second gas pipe 5 and first gas pipe 3
Equipped with valve 11, the open and-shut mode of vacuum tube 6, second gas pipe 5 and first gas pipe 3 can be flexibly controlled by valve 11,
And then can be adjusted in real time according to actual chemical vapor deposition conditions, applicability is improved, and then improve operation
Flexibility；
Further, the vacuum tube 6, second gas pipe 5 and first gas pipe 3 are arranged with one respectively close to one end of shell 9
Communicating pipe 8 in shell 9 is connected to, and the opening of the communicating pipe 8 is equipped with sieve 20, and the material of the sieve 20 is high temperature resistant
Material, by sieve 20 can be effectively prevented external dust vacuumize and in venting process enter shell 9 in influence silicon carbide
The generation of epitaxial wafer；
Further, the opening of the vacuum tube 6, second gas pipe 5 and first gas pipe 3 is equipped with internal screw thread 12, passes through
Internal screw thread 12 can be connect with external reaction gas conveyance conduit, pass through the first gas pipe 3 and second gas in 9 left side of shell
Pipe 5 carries out being passed through reaction gas, carries out discharge reaction gas by the first gas pipe 3 and second gas pipe 5 on 9 right side of shell,
Be conducive to improve the stability of reaction gas, simultaneously as being provided with first gas pipe 3 and second gas pipe 5, can carry out same
When be passed through different reaction gas, second can also be changed to from first gas pipe 3 according to the growing height of silicon carbide epitaxial wafer
Flue 5 carries out being passed through reaction gas, improves the flexibility of operation；
Further, the communicating pipe 8 is equipped with thermal insulation board 7, can be effectively thermally shielded by thermal insulation board 7, reduces in shell 9
Influence of portion's temperature to extraneous operating environment, the mounting seat 1 are equipped with the vacuum pump 2 for being vacuumized to shell 9；
Specifically, the vacuum pump 2 is the HP vacuum pump series of German Lenno, shell 9 can be carried out taking out by vacuum pump 2 true
Sky, is conducive to the reaction environment for improving chemical vapor deposition processes, and the output end of the vacuum pump 2 passes through connecting tube 4 and vacuum
Pipe 6 is connected to, can be to vacuumizing in shell 9 by vacuum pump 2, and then effectively improves the reaction ring of chemical vapor deposition
Border is conducive to the quality for improving the silicon carbide epitaxy flake products of preparation；
Further, 9 lower end of shell, which is equipped with, is used for heat-insulated heat insulation pedestal 15, and 15 lower end of heat insulation pedestal passes through multiple
Bracket 16 is connect with 1 upper end of mounting seat, by the cooperation of heat insulation pedestal 15 and bracket 16, can be effectively reduced inside shell 9
Influence of the temperature to extraneous operating environment is conducive to the comfort level for improving operating environment, and 1 lower end of mounting seat is uniformly provided with
Multiple castors 17 can effectively improve the mobile flexibility of device by castor 17, be not directed in the device part with it is existing
Technology is identical or can be realized by using the prior art.
In the present embodiment, the chemical vapor deposition unit for producing silicon carbide epitaxial wafer is being prepared outside silicon carbide
Prolong the application in flake products.
Embodiment 3
It is a kind of for producing silicon carbide epitaxial wafer in the embodiment of the present invention also referring to shown in Fig. 1, Fig. 2, Fig. 3 and Fig. 5
Chemical vapor deposition unit, including mounting seat 1, vacuum pump 2 and the shell 9 that 1 top of mounting seat is arranged in, the shell
9 fronts are hinged with hermatic door；
In order to solve to be traditionally used for the chemical vapor deposition unit of production silicon carbide epitaxial wafer since ventilation pipe is relatively simple
And the problem of reducing operating flexibility, the 9 inside upper and lower ends of shell are respectively equipped with a heating plate 10, the heating plate 10
Including heating induction coil 18 and it is set in its external graphite linings 19, the material of the graphite linings 19 is high purity graphite, is passed through
Heating induction coil 18 heats the cavity inside shell 9, while playing protection effect by graphite linings 19, effectively prevent
Heating induction coil 18 is contacted with the cavity inside shell 9, improves the reaction environment of chemical vapor deposition, the shell
The heating plate 10 of 9 interior lower ends is equipped with the silicon carbide substrates 14 for producing silicon carbide epitaxial wafer, left and right outside the shell 9
Two sides are successively respectively symmetrically equipped with vacuum tube 6, second gas pipe 5 and first gas pipe 3, the vacuum tube 6, second from top to bottom
It is equipped with valve 11 on flue 5 and first gas pipe 3, vacuum tube 6, second gas pipe 5 can flexibly be controlled by valve 11
It with the open and-shut mode of first gas pipe 3, and then can be adjusted, be improved in real time according to actual chemical vapor deposition conditions
Applicability, and then improve the flexibility of operation；
Further, the vacuum tube 6, second gas pipe 5 and first gas pipe 3 are arranged with one respectively close to one end of shell 9
Communicating pipe 8 in shell 9 is connected to, and the opening of the communicating pipe 8 is equipped with sieve 20, and the material of the sieve 20 is high temperature resistant
Material, by sieve 20 can be effectively prevented external dust vacuumize and in venting process enter shell 9 in influence silicon carbide
The generation of epitaxial wafer carries out being passed through reaction gas, passes through shell by the first gas pipe 3 and second gas pipe 5 in 9 left side of shell
The first gas pipe 3 and second gas pipe 5 on 9 right sides carry out discharge reaction gas, are conducive to the stability for improving reaction gas, together
When, it, can also root since different reaction gas can be passed through simultaneously provided with first gas pipe 3 and second gas pipe 5
It carries out being passed through reaction gas to be changed to second gas pipe 5 from first gas pipe 3 according to the growing height of silicon carbide epitaxial wafer, improve
The flexibility of operation；
Further, the communicating pipe 8 is equipped with thermal insulation board 7, can be effectively thermally shielded by thermal insulation board 7, reduces in shell 9
Influence of portion's temperature to extraneous operating environment is equipped with graphite barrier ring 13 on the right side of the silicon carbide substrates 14, passes through graphite barrier
The stability for the reaction gas being passed through can be improved in ring 13, prevents turbulent flow and influences the growth of silicon carbide epitaxial wafer, described
13 surface of graphite barrier ring is coated with silicon carbide, can prevent to spread in cavity of the impurity into shell 9 in graphite barrier ring 13,
Be conducive to improve the reaction environment of chemical vapor deposition；
Further, the mounting seat 1 is equipped with the vacuum pump 2 for being vacuumized to shell 9, specifically, described true
Sky pump 2 is the HP vacuum pump series of German Lenno, can be vacuumized to shell 9 by vacuum pump 2, is conducive to improve chemistry
The reaction environment of vapor deposition processes；
Specifically, the output end of the vacuum pump 2 is connected to by connecting tube 4 with vacuum tube 6, it can be to shell 9 by vacuum pump 2
It is inside vacuumized, and then effectively improves the reaction environment of chemical vapor deposition, be conducive to the silicon carbide epitaxial wafer for improving preparation
The quality of product；
Further, 9 lower end of shell, which is equipped with, is used for heat-insulated heat insulation pedestal 15, and 15 lower end of heat insulation pedestal passes through multiple
Bracket 16 is connect with 1 upper end of mounting seat, by the cooperation of heat insulation pedestal 15 and bracket 16, can be effectively reduced inside shell 9
Influence of the temperature to extraneous operating environment is conducive to the comfort level for improving operating environment；
Part is not directed in the device to be the same as those in the prior art or can be realized by using the prior art.
In the present embodiment, the chemical vapor deposition unit for producing silicon carbide epitaxial wafer is being prepared outside silicon carbide
Prolong the application in flake products.
The working principle of the embodiment of the present invention is: it is described for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer,
The cavity inside shell 9 is heated by heating induction coil 18, while playing protection effect by graphite linings 19, effectively
It prevents heating induction coil 18 from being contacted with the cavity inside shell 9, improves the reaction environment of chemical vapor deposition；Together
When, it can flexibly control the open and-shut mode of vacuum tube 6, second gas pipe 5 and first gas pipe 3 by valve 11, and then can be with
It is adjusted in real time according to actual chemical vapor deposition conditions, improves applicability；In production process, pass through 9 left side of shell
First gas pipe 3 and second gas pipe 5 carry out being passed through reaction gas, pass through the first gas pipe 3 and the second gas on the right side of shell 9
Body pipe 5 carries out discharge reaction gas, be conducive to improve reaction gas stability, simultaneously as be provided with first gas pipe 3 with
Second gas pipe 5 can be passed through different reaction gas simultaneously, can also according to the growing height of silicon carbide epitaxial wafer come
Second gas pipe 5 is changed to from first gas pipe 3 to carry out being passed through reaction gas, improves the flexibility of operation；Also pass through vacuum pump 2
It can be to being vacuumized in shell 9, and then the reaction environment of chemical vapor deposition is effectively improved, be conducive to the carbon for improving preparation
The quality of SiClx extension flake products；External dust can be effectively prevented by sieve 20 to vacuumize and entering shell in venting process
The generation of silicon carbide epitaxial wafer is influenced in body 9.
The beneficial effects of the present invention are: the present apparatus is provided with vacuum tube, second gas pipe and first gas pipe, pass through valve
The open and-shut mode of vacuum tube, second gas pipe and first gas pipe can be flexibly controlled, and then can be according to actual chemical gas
Phase sedimentary condition is adjusted in real time, improves the flexibility of operation, is solved and is traditionally used for production silicon carbide epitaxial wafer
The problem of chemical vapor deposition unit reduces operating flexibility since ventilation pipe is relatively simple also passes through the pumping of vacuum pump
The dust-proof reaction environment to effectively improve chemical vapor deposition of vacuum and sieve is conducive to the silicon carbide epitaxial wafer for improving preparation
The quality of product, has a vast market foreground.
The electric elements occurred in this article are electrically connected with extraneous main controller and 220V alternating current, and main controller can be meter
Calculation machine etc. plays the conventionally known equipment of control.(in structure without electrical component or have indicated then deleting for power supply unit used)
In the description of the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection " should be done extensively
Reason and good sense solution may be a detachable connection for example, it may be being fixedly connected, or be integrally connected；It can be mechanical connection,
It can be electrical connection；It can be directly connected, the company inside two elements can also be can be indirectly connected through an intermediary
It is logical.For the ordinary skill in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. it is a kind of for produce the chemical vapor deposition unit of silicon carbide epitaxial wafer, including mounting seat (1), vacuum pump (2) with
And the shell (9) being arranged above mounting seat (1), shell (9) front are hinged with hermatic door, which is characterized in that the shell
(9) internal upper and lower ends are respectively equipped with a heating plate (10), and the external left and right sides of shell (9) is successively respectively symmetrically set from top to bottom
There are vacuum tube (6), second gas pipe (5) and first gas pipe (3), and vacuum tube (6), second gas pipe (5) and first gas
Valve (11) are equipped on pipe (3)；
The heating plate (10) includes heating induction coil (18) and is set in its external graphite linings (19), and shell (9) is internal
The heating plate (10) of lower end is equipped with silicon carbide substrates (14)；
The vacuum tube (6), second gas pipe (5) and first gas pipe (3) exist with a setting respectively close to the one end of shell (9)
Communicating pipe (8) connection in shell (9), the opening of communicating pipe (8) are equipped with sieve (20), and mounting seat (1) is equipped with vacuum
It pumps (2).
2. according to claim 1 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
The material for stating graphite linings (19) is high purity graphite.
3. according to claim 1 or 2 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, feature exists
In the opening of the vacuum tube (6), second gas pipe (5) and first gas pipe (3) is equipped with internal screw thread (12).
4. according to claim 3 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
Communicating pipe (8) are stated equipped with thermal insulation board (7).
5. according to claim 4 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
It states and is equipped with graphite barrier ring (13) on the right side of silicon carbide substrates (14).
6. according to claim 5 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
The output end for stating vacuum pump (2) is connected to by connecting tube (4) with vacuum tube (6).
7. according to claim 6 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
Shell (9) lower end is stated equipped with heat insulation pedestal (15), heat insulation pedestal (15) lower end passes through on multiple brackets (16) and mounting seat (1)
End connection.
8. according to claim 7 for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer, which is characterized in that institute
It states mounting seat (1) lower end and is uniformly provided with multiple castors (17).
9. prepared by a kind of chemical vapor deposition unit a method as claimed in any one of claims 1-8 for producing silicon carbide epitaxial wafer
Application in silicon carbide epitaxy flake products.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910009717.5A CN109402604A (en) | 2019-01-05 | 2019-01-05 | It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer |
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| CN201910009717.5A CN109402604A (en) | 2019-01-05 | 2019-01-05 | It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer |
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| CN111320492A (en) * | 2020-03-30 | 2020-06-23 | 于伟华 | Device for depositing silicon carbide on surface of refractory material |
| CN111411344A (en) * | 2020-03-30 | 2020-07-14 | 于伟华 | Method for preparing silicon carbide compact composite material |
| CN115613131A (en) * | 2022-10-17 | 2023-01-17 | 江苏汉印机电科技股份有限公司 | Vacuum chamber of silicon carbide epitaxial chemical vapor deposition system |
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| US20160348274A1 (en) * | 2015-05-28 | 2016-12-01 | Sumitomo Electric Industries, Ltd. | Method and apparatus for manufacturing silicon carbide substrate |
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| CN209383850U (en) * | 2019-01-05 | 2019-09-13 | 泰科天润半导体科技（北京）有限公司 | It is a kind of for producing the chemical vapor deposition unit of silicon carbide epitaxial wafer |
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| CN103603048A (en) * | 2013-07-04 | 2014-02-26 | 国家电网公司 | Chemical vapor deposition equipment used for producing silicon carbide epitaxial wafer |
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| CN111320492A (en) * | 2020-03-30 | 2020-06-23 | 于伟华 | Device for depositing silicon carbide on surface of refractory material |
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