AU2014208227A1 - Multi-level solar cell metallization - Google Patents
Multi-level solar cell metallization Download PDFInfo
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- AU2014208227A1 AU2014208227A1 AU2014208227A AU2014208227A AU2014208227A1 AU 2014208227 A1 AU2014208227 A1 AU 2014208227A1 AU 2014208227 A AU2014208227 A AU 2014208227A AU 2014208227 A AU2014208227 A AU 2014208227A AU 2014208227 A1 AU2014208227 A1 AU 2014208227A1
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- layer
- metal
- electrically conductive
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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| PCT/US2012/072249 WO2013102181A1 (en) | 2011-12-30 | 2012-12-30 | Multi-level solar cell metallization |
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| PCT/US2012/072249 Division WO2013102181A1 (en) | 2011-08-09 | 2012-12-30 | Multi-level solar cell metallization |
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| WO2015017592A2 (en) * | 2013-07-30 | 2015-02-05 | Solexel, Inc. | Laminated backplane for solar cells |
| WO2015017098A1 (en) * | 2013-07-31 | 2015-02-05 | Christoph Sachs | Use of silicon nitride as a substrate and a coating material for the rapid solidification of silicon |
| US10553738B2 (en) * | 2013-08-21 | 2020-02-04 | Sunpower Corporation | Interconnection of solar cells in a solar cell module |
| US9496437B2 (en) | 2014-03-28 | 2016-11-15 | Sunpower Corporation | Solar cell having a plurality of sub-cells coupled by a metallization structure |
| CN104124287B (zh) * | 2014-06-20 | 2016-11-16 | 中山大学 | 一种单晶硅太阳电池背表面栅线电极结构及单晶硅太阳电池 |
| DE102016110965B4 (de) * | 2016-06-15 | 2019-03-14 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Halbleiter-Bauelement mit vorder- und rückseitiger Elektrode und Verfahren zu dessen Herstellung |
| KR101800656B1 (ko) * | 2016-08-09 | 2017-11-23 | 하이엔드테크놀로지(주) | 포토레지스트 음각패턴 및 표면개질을 이용한 금속메쉬 타입 투명 전도막 제조방법 및 이에 의해 제조되는 투명 전도막 |
| US10115855B2 (en) * | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
| US9960302B1 (en) | 2016-10-18 | 2018-05-01 | Tesla, Inc. | Cascaded photovoltaic structures with interdigitated back contacts |
| US10937915B2 (en) | 2016-10-28 | 2021-03-02 | Tesla, Inc. | Obscuring, color matching, and camouflaging solar panels |
| US10381973B2 (en) | 2017-05-17 | 2019-08-13 | Tesla, Inc. | Uniformly and directionally colored photovoltaic modules |
| US10985688B2 (en) | 2017-06-05 | 2021-04-20 | Tesla, Inc. | Sidelap interconnect for photovoltaic roofing modules |
| US10734938B2 (en) | 2017-07-21 | 2020-08-04 | Tesla, Inc. | Packaging for solar roof tiles |
| US10857764B2 (en) | 2017-07-25 | 2020-12-08 | Tesla, Inc. | Method for improving adhesion between glass cover and encapsulant for solar roof tiles |
| US10978990B2 (en) | 2017-09-28 | 2021-04-13 | Tesla, Inc. | Glass cover with optical-filtering coating for managing color of a solar roof tile |
| US10454409B2 (en) | 2018-02-02 | 2019-10-22 | Tesla, Inc. | Non-flat solar roof tiles |
| US10862420B2 (en) | 2018-02-20 | 2020-12-08 | Tesla, Inc. | Inter-tile support for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| CA3055609A1 (en) | 2018-03-01 | 2019-09-06 | Tesla, Inc. | System and method for packaging photovoltaic roof tiles |
| US11431279B2 (en) | 2018-07-02 | 2022-08-30 | Tesla, Inc. | Solar roof tile with a uniform appearance |
| US11082005B2 (en) | 2018-07-31 | 2021-08-03 | Tesla, Inc. | External electrical contact for solar roof tiles |
| US11245354B2 (en) | 2018-07-31 | 2022-02-08 | Tesla, Inc. | Solar roof tile spacer with embedded circuitry |
| US11245355B2 (en) | 2018-09-04 | 2022-02-08 | Tesla, Inc. | Solar roof tile module |
| US11581843B2 (en) | 2018-09-14 | 2023-02-14 | Tesla, Inc. | Solar roof tile free of back encapsulant layer |
| US11431280B2 (en) | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
| CN112366249B (zh) * | 2020-11-16 | 2023-10-20 | 理想万里晖半导体设备(上海)股份有限公司 | 具有追踪功能的太阳能电池制造方法及其所用的追踪系统 |
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| JP4334455B2 (ja) * | 2004-10-22 | 2009-09-30 | シャープ株式会社 | 太陽電池モジュール |
| JP5142980B2 (ja) * | 2006-03-01 | 2013-02-13 | 三洋電機株式会社 | 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール |
| US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
| JP4989549B2 (ja) * | 2007-08-24 | 2012-08-01 | 三洋電機株式会社 | 太陽電池及び太陽電池モジュール |
| JP2009135338A (ja) * | 2007-11-30 | 2009-06-18 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
| US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
| JP2011003724A (ja) * | 2009-06-18 | 2011-01-06 | Sanyo Electric Co Ltd | 太陽電池モジュール |
| JP5625311B2 (ja) * | 2009-10-20 | 2014-11-19 | 凸版印刷株式会社 | 太陽電池用裏面保護シート及び太陽電池モジュール |
| JP2011091327A (ja) * | 2009-10-26 | 2011-05-06 | Sharp Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
| JP5598003B2 (ja) * | 2010-01-29 | 2014-10-01 | 凸版印刷株式会社 | 太陽電池モジュール |
| JP5406900B2 (ja) * | 2011-09-29 | 2014-02-05 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
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2012
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2014
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2016
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6250552B2 (ja) | 2017-12-20 |
| JP2015507848A (ja) | 2015-03-12 |
| WO2013102181A1 (en) | 2013-07-04 |
| AU2016265969A1 (en) | 2016-12-15 |
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