AU2013267481A1 - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents

Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells Download PDF

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Publication number
AU2013267481A1
AU2013267481A1 AU2013267481A AU2013267481A AU2013267481A1 AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1 AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1
Authority
AU
Australia
Prior art keywords
solar cell
layer
base
emitter
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2013267481A
Other languages
English (en)
Inventor
Pranav Anbalagan
Solene COUTANT
Heather DESHAZER
Anand Deshpande
Pawan Kapur
Swaroop KOMMERA
Mehrdad M. Moslehi
Virendra V. Rana
Benjamine E. Rattle
Sean M. Seutter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of AU2013267481A1 publication Critical patent/AU2013267481A1/en
Assigned to SOLEXEL, INC. reassignment SOLEXEL, INC. Amend patent request/document other than specification (104) Assignors: ANBALAGAN, PRANAV, COUTANT, Solene, DESHAZER, Heather, DESHPANDE, ANAND, KAPUR, PAWAN, KOMMERA, Swaroop, MOSLEHI, MEHRDAD, RANA, VIRENDRA, RATTLE, BENJAMINE, SEUTTER, SEAN, SOLEXEL, INC.
Priority to AU2016200610A priority Critical patent/AU2016200610B2/en
Abandoned legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
AU2013267481A 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells Abandoned AU2013267481A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2016200610A AU2016200610B2 (en) 2012-05-29 2016-02-01 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261652833P 2012-05-29 2012-05-29
US61/652,833 2012-05-29
US201361816830P 2013-04-29 2013-04-29
US61/816,830 2013-04-29
US201361827252P 2013-05-24 2013-05-24
US61/827,252 2013-05-24
PCT/US2013/043193 WO2013181298A1 (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2016200610A Division AU2016200610B2 (en) 2012-05-29 2016-02-01 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Publications (1)

Publication Number Publication Date
AU2013267481A1 true AU2013267481A1 (en) 2015-01-22

Family

ID=49673880

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2013267481A Abandoned AU2013267481A1 (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells
AU2016200610A Expired - Fee Related AU2016200610B2 (en) 2012-05-29 2016-02-01 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2016200610A Expired - Fee Related AU2016200610B2 (en) 2012-05-29 2016-02-01 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Country Status (7)

Country Link
EP (1) EP2856512A4 (zh)
JP (1) JP2015528196A (zh)
KR (1) KR101528447B1 (zh)
CN (1) CN104737302A (zh)
AU (2) AU2013267481A1 (zh)
MY (1) MY184055A (zh)
WO (1) WO2013181298A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105322032A (zh) * 2014-07-30 2016-02-10 英稳达科技股份有限公司 太阳能电池
WO2017008120A1 (en) * 2015-07-14 2017-01-19 Newsouth Innovations Pty Limited A method for forming a contacting structure to a back contact solar cell
KR102600379B1 (ko) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지와 그 제조 방법
CN109983318B (zh) 2017-02-20 2021-07-06 株式会社富士金 流体控制器的异常检测装置、异常检测系统、异常检测方法及流体控制器
WO2019017281A1 (ja) * 2017-07-18 2019-01-24 シャープ株式会社 光電変換装置
EP3624204B1 (en) * 2018-09-13 2023-04-26 IMEC vzw Selective deposition for interdigitated patterns in solar cells

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US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
JP2005310830A (ja) * 2004-04-16 2005-11-04 Sharp Corp 太陽電池および太陽電池の製造方法
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US9508886B2 (en) * 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US20080216887A1 (en) * 2006-12-22 2008-09-11 Advent Solar, Inc. Interconnect Technologies for Back Contact Solar Cells and Modules
KR20100015622A (ko) * 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
DE102007059486A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür
US20090217963A1 (en) * 2008-02-29 2009-09-03 Motorola, Inc. Photovoltaic apparatus for charging a portable electronic device and method for making
US20090301559A1 (en) * 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
DE102009003467A1 (de) * 2009-02-11 2010-08-19 Q-Cells Se Rückseitenkontaktierte Solarzelle
JP2012521662A (ja) * 2009-03-26 2012-09-13 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 熱拡散ドープ領域中にレーザー焼成コンタクトを有する太陽電池セルのための装置及び方法
KR101153377B1 (ko) * 2009-08-24 2012-06-07 주식회사 효성 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법
JP2011061020A (ja) * 2009-09-10 2011-03-24 Sharp Corp 裏面コンタクト型太陽電池素子およびその製造方法
EP2510552A4 (en) * 2009-12-09 2014-11-05 Solexel Inc HIGHLY EFFICIENT PHOTOVOLTAIC BACK CONTACT STRUCTURES FOR SOLAR CELLS AND METHOD OF MANUFACTURING THEM BY USING SEMICONDUCTOR WAFERS
EP2395554A3 (en) * 2010-06-14 2015-03-11 Imec Fabrication method for interdigitated back contact photovoltaic cells
KR20140015247A (ko) * 2010-08-05 2014-02-06 솔렉셀, 인크. 태양전지용 백플레인 보강 및 상호연결부
KR20120021859A (ko) * 2010-08-19 2012-03-09 현대중공업 주식회사 태양전지의 후면전극 제조 방법
TWI420700B (zh) * 2010-12-29 2013-12-21 Au Optronics Corp 太陽能電池

Also Published As

Publication number Publication date
AU2016200610B2 (en) 2017-12-07
WO2013181298A1 (en) 2013-12-05
AU2016200610A1 (en) 2016-02-25
MY184055A (en) 2021-03-17
KR20150028782A (ko) 2015-03-16
KR101528447B1 (ko) 2015-06-11
CN104737302A (zh) 2015-06-24
EP2856512A1 (en) 2015-04-08
EP2856512A4 (en) 2015-12-16
JP2015528196A (ja) 2015-09-24

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MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted