AU2013267481A1 - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents
Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells Download PDFInfo
- Publication number
- AU2013267481A1 AU2013267481A1 AU2013267481A AU2013267481A AU2013267481A1 AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1 AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A AU2013267481 A AU 2013267481A AU 2013267481 A1 AU2013267481 A1 AU 2013267481A1
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- AU
- Australia
- Prior art keywords
- solar cell
- layer
- base
- emitter
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2016200610A AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261652833P | 2012-05-29 | 2012-05-29 | |
US61/652,833 | 2012-05-29 | ||
US201361816830P | 2013-04-29 | 2013-04-29 | |
US61/816,830 | 2013-04-29 | ||
US201361827252P | 2013-05-24 | 2013-05-24 | |
US61/827,252 | 2013-05-24 | ||
PCT/US2013/043193 WO2013181298A1 (en) | 2012-05-29 | 2013-05-29 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2016200610A Division AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2013267481A1 true AU2013267481A1 (en) | 2015-01-22 |
Family
ID=49673880
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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AU2013267481A Abandoned AU2013267481A1 (en) | 2012-05-29 | 2013-05-29 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
AU2016200610A Expired - Fee Related AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2016200610A Expired - Fee Related AU2016200610B2 (en) | 2012-05-29 | 2016-02-01 | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2856512A4 (zh) |
JP (1) | JP2015528196A (zh) |
KR (1) | KR101528447B1 (zh) |
CN (1) | CN104737302A (zh) |
AU (2) | AU2013267481A1 (zh) |
MY (1) | MY184055A (zh) |
WO (1) | WO2013181298A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105322032A (zh) * | 2014-07-30 | 2016-02-10 | 英稳达科技股份有限公司 | 太阳能电池 |
WO2017008120A1 (en) * | 2015-07-14 | 2017-01-19 | Newsouth Innovations Pty Limited | A method for forming a contacting structure to a back contact solar cell |
KR102600379B1 (ko) * | 2015-12-21 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지와 그 제조 방법 |
CN109983318B (zh) | 2017-02-20 | 2021-07-06 | 株式会社富士金 | 流体控制器的异常检测装置、异常检测系统、异常检测方法及流体控制器 |
WO2019017281A1 (ja) * | 2017-07-18 | 2019-01-24 | シャープ株式会社 | 光電変換装置 |
EP3624204B1 (en) * | 2018-09-13 | 2023-04-26 | IMEC vzw | Selective deposition for interdigitated patterns in solar cells |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US6337283B1 (en) * | 1999-12-30 | 2002-01-08 | Sunpower Corporation | Method of fabricating a silicon solar cell |
JP2005310830A (ja) * | 2004-04-16 | 2005-11-04 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US9508886B2 (en) * | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
KR20100015622A (ko) * | 2007-03-16 | 2010-02-12 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 태양 전지 |
DE102007059486A1 (de) * | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit länglichen, ineinander verschachtelten Emitter- und Basisbereichen an der Rückseite und Herstellungsverfahren hierfür |
US20090217963A1 (en) * | 2008-02-29 | 2009-09-03 | Motorola, Inc. | Photovoltaic apparatus for charging a portable electronic device and method for making |
US20090301559A1 (en) * | 2008-05-13 | 2009-12-10 | Georgia Tech Research Corporation | Solar cell having a high quality rear surface spin-on dielectric layer |
US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
DE102009003467A1 (de) * | 2009-02-11 | 2010-08-19 | Q-Cells Se | Rückseitenkontaktierte Solarzelle |
JP2012521662A (ja) * | 2009-03-26 | 2012-09-13 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 熱拡散ドープ領域中にレーザー焼成コンタクトを有する太陽電池セルのための装置及び方法 |
KR101153377B1 (ko) * | 2009-08-24 | 2012-06-07 | 주식회사 효성 | 개선된 후면구조를 구비한 후면접합 태양전지 및 그 제조방법 |
JP2011061020A (ja) * | 2009-09-10 | 2011-03-24 | Sharp Corp | 裏面コンタクト型太陽電池素子およびその製造方法 |
EP2510552A4 (en) * | 2009-12-09 | 2014-11-05 | Solexel Inc | HIGHLY EFFICIENT PHOTOVOLTAIC BACK CONTACT STRUCTURES FOR SOLAR CELLS AND METHOD OF MANUFACTURING THEM BY USING SEMICONDUCTOR WAFERS |
EP2395554A3 (en) * | 2010-06-14 | 2015-03-11 | Imec | Fabrication method for interdigitated back contact photovoltaic cells |
KR20140015247A (ko) * | 2010-08-05 | 2014-02-06 | 솔렉셀, 인크. | 태양전지용 백플레인 보강 및 상호연결부 |
KR20120021859A (ko) * | 2010-08-19 | 2012-03-09 | 현대중공업 주식회사 | 태양전지의 후면전극 제조 방법 |
TWI420700B (zh) * | 2010-12-29 | 2013-12-21 | Au Optronics Corp | 太陽能電池 |
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2013
- 2013-05-29 EP EP13798110.6A patent/EP2856512A4/en not_active Withdrawn
- 2013-05-29 CN CN201380040222.XA patent/CN104737302A/zh active Pending
- 2013-05-29 KR KR1020147036595A patent/KR101528447B1/ko not_active IP Right Cessation
- 2013-05-29 AU AU2013267481A patent/AU2013267481A1/en not_active Abandoned
- 2013-05-29 JP JP2015515163A patent/JP2015528196A/ja active Pending
- 2013-05-29 MY MYPI2014703566A patent/MY184055A/en unknown
- 2013-05-29 WO PCT/US2013/043193 patent/WO2013181298A1/en active Application Filing
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2016
- 2016-02-01 AU AU2016200610A patent/AU2016200610B2/en not_active Expired - Fee Related
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AU2016200610B2 (en) | 2017-12-07 |
WO2013181298A1 (en) | 2013-12-05 |
AU2016200610A1 (en) | 2016-02-25 |
MY184055A (en) | 2021-03-17 |
KR20150028782A (ko) | 2015-03-16 |
KR101528447B1 (ko) | 2015-06-11 |
CN104737302A (zh) | 2015-06-24 |
EP2856512A1 (en) | 2015-04-08 |
EP2856512A4 (en) | 2015-12-16 |
JP2015528196A (ja) | 2015-09-24 |
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