AU2003284927A8 - Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation and fabrication methodology of same - Google Patents

Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation and fabrication methodology of same

Info

Publication number
AU2003284927A8
AU2003284927A8 AU2003284927A AU2003284927A AU2003284927A8 AU 2003284927 A8 AU2003284927 A8 AU 2003284927A8 AU 2003284927 A AU2003284927 A AU 2003284927A AU 2003284927 A AU2003284927 A AU 2003284927A AU 2003284927 A8 AU2003284927 A8 AU 2003284927A8
Authority
AU
Australia
Prior art keywords
semiconductor devices
quantum well
etch stop
same
well structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003284927A
Other versions
AU2003284927A1 (en
Inventor
Geoff W Taylor
Scott W Duncan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CT FOR SCIENCE AND TECHNOLOGY
Opel Inc
Original Assignee
CT FOR SCIENCE AND TECHNOLOGY
Opel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/280,892 external-priority patent/US6954473B2/en
Priority claimed from US10/340,941 external-priority patent/US7015120B2/en
Priority claimed from US10/340,942 external-priority patent/US6841795B2/en
Application filed by CT FOR SCIENCE AND TECHNOLOGY, Opel Inc filed Critical CT FOR SCIENCE AND TECHNOLOGY
Publication of AU2003284927A8 publication Critical patent/AU2003284927A8/en
Publication of AU2003284927A1 publication Critical patent/AU2003284927A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
AU2003284927A 2002-10-25 2003-10-23 Semiconductor device with quantum well and etch stop Abandoned AU2003284927A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10/280,892 2002-10-25
US10/280,892 US6954473B2 (en) 2002-10-25 2002-10-25 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay
US10/340,941 2003-01-13
US10/340,942 2003-01-13
US10/340,941 US7015120B2 (en) 2002-10-25 2003-01-13 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US10/340,942 US6841795B2 (en) 2002-10-25 2003-01-13 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
PCT/US2003/033829 WO2004038764A2 (en) 2002-10-25 2003-10-23 Semiconductor device with quantum well and etch stop

Publications (2)

Publication Number Publication Date
AU2003284927A8 true AU2003284927A8 (en) 2004-05-13
AU2003284927A1 AU2003284927A1 (en) 2004-05-13

Family

ID=32180447

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003284927A Abandoned AU2003284927A1 (en) 2002-10-25 2003-10-23 Semiconductor device with quantum well and etch stop

Country Status (2)

Country Link
AU (1) AU2003284927A1 (en)
WO (1) WO2004038764A2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array

Also Published As

Publication number Publication date
WO2004038764A2 (en) 2004-05-06
AU2003284927A1 (en) 2004-05-13
WO2004038764A8 (en) 2005-07-07
WO2004038764A3 (en) 2004-07-15

Similar Documents

Publication Publication Date Title
EP1654791A4 (en) Semiconductor laser array device employing modulation doped quantum well structures
AU2001294817A1 (en) Fabrication of semiconductor devices
AU2001286649A1 (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU8664901A (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
DE602004011146D1 (en) Nitride semiconductor laser with current blocking layers and manufacturing method therefor
WO2002091483A3 (en) Improved photovoltaic device
AU1774001A (en) Semiconductor devices with selectively doped iii-v nitride layers
EP1720202A4 (en) Semiconductor device manufacturing method and insulating film etching method
AU2002306569A1 (en) Gallium nitride material based semiconductor devices including thermally conductive regions
TW200610019A (en) Fully depleted SOI multiple threshold voltage application
AU2003279751A8 (en) Method of fabricating semiconductor by nitrogen doping of silicon film
AU2002329197A1 (en) Trench structure for semiconductor devices
TW200503268A (en) High voltage metal-oxide semiconductor device
NO20034099L (en) Formation of a silicon front side contact on insulator substrate
AU2001218182A1 (en) Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
TW200705762A (en) Semiconductor optical device having an improved current blocking layer and manufacturing method thereof
AU2002343165A1 (en) Semiconductor devices with localized reduced lifetime regions and their manufacture
HK1065644A1 (en) Structure and method of making a high performance semiconductor device having a narrow doping profile
DE60227040D1 (en) Semiconductor device with improved ESD withstand voltage
AU2003284927A8 (en) Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation and fabrication methodology of same
AU2002257257A1 (en) Semiconductor structures, devices and method of fabrication
WO2007036898A3 (en) Semiconductor device with improved contact pad and method for fabrication thereof
WO2004003980A3 (en) Interconnect structure and method for forming
EP1276187A3 (en) Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward
GB0205581D0 (en) New methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride,mercury telluride,and cadmium telluride

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase