WO2004038764A8 - Semiconductor device with quantum well and etch stop - Google Patents
Semiconductor device with quantum well and etch stopInfo
- Publication number
- WO2004038764A8 WO2004038764A8 PCT/US2003/033829 US0333829W WO2004038764A8 WO 2004038764 A8 WO2004038764 A8 WO 2004038764A8 US 0333829 W US0333829 W US 0333829W WO 2004038764 A8 WO2004038764 A8 WO 2004038764A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type
- layers
- devices
- quantum well
- etch stop
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003284927A AU2003284927A1 (en) | 2002-10-25 | 2003-10-23 | Semiconductor device with quantum well and etch stop |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/280,892 | 2002-10-25 | ||
US10/280,892 US6954473B2 (en) | 2002-10-25 | 2002-10-25 | Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay |
US10/340,941 US7015120B2 (en) | 2002-10-25 | 2003-01-13 | Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
US10/340,941 | 2003-01-13 | ||
US10/340,942 US6841795B2 (en) | 2002-10-25 | 2003-01-13 | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
US10/340,942 | 2003-01-13 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004038764A2 WO2004038764A2 (en) | 2004-05-06 |
WO2004038764A3 WO2004038764A3 (en) | 2004-07-15 |
WO2004038764A8 true WO2004038764A8 (en) | 2005-07-07 |
Family
ID=32180447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/033829 WO2004038764A2 (en) | 2002-10-25 | 2003-10-23 | Semiconductor device with quantum well and etch stop |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2003284927A1 (en) |
WO (1) | WO2004038764A2 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
-
2003
- 2003-10-23 AU AU2003284927A patent/AU2003284927A1/en not_active Abandoned
- 2003-10-23 WO PCT/US2003/033829 patent/WO2004038764A2/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2004038764A2 (en) | 2004-05-06 |
AU2003284927A1 (en) | 2004-05-13 |
AU2003284927A8 (en) | 2004-05-13 |
WO2004038764A3 (en) | 2004-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003028110A1 (en) | Semiconductor device | |
WO2005111817A3 (en) | Semiconductor device and method of forming the same | |
KR850005154A (en) | Compound semiconductor integrated circuit device | |
KR20080106951A (en) | Esd protection circuit with isolated diode element and method thereof | |
JPH11274495A (en) | Vdmos transistor | |
SG135952A1 (en) | Semiconductor diodes with fin structure | |
EP1143526A3 (en) | Field effect transistor and method of manufacturing the same | |
WO2005048318A3 (en) | Nitride metal oxide semiconductor integrated transistor devices | |
TW200608512A (en) | Semiconductor device | |
US10411006B2 (en) | Poly silicon based interface protection | |
JPH03501669A (en) | Integrated circuit with latch-up protection circuit | |
WO2004034475A8 (en) | Plasma oscillation switching device | |
Chao et al. | High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts | |
JP3415401B2 (en) | Semiconductor integrated circuit device and method of manufacturing the same | |
WO2004038764A8 (en) | Semiconductor device with quantum well and etch stop | |
TW200514172A (en) | Semiconductor device and manufacturing method therefor | |
KR940018964A (en) | Semiconductor devices | |
WO2020001636A1 (en) | Semiconductor device, semiconductor apparatus and method of manufacturing the same | |
US6057578A (en) | Protective integrated structure with biasing devices having a predetermined reverse conduction threshold | |
JPS63137478A (en) | Manufacture of semiconductor device having protective circuit | |
CN114156266A (en) | Power semiconductor element | |
WO2001001452A3 (en) | Organic light emitters with improved carrier injection | |
JP2870450B2 (en) | Semiconductor integrated circuit device | |
JPH02246160A (en) | Semiconductor device | |
JPS6050062B2 (en) | Semiconductor integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
CFP | Corrected version of a pamphlet front page | ||
CR1 | Correction of entry in section i |
Free format text: IN PCT GAZETTE 19/2004 UNDER (30) REPLACE "10/340,942, 31 JANUARY 2003 (31.01.2003), US" BY "10/340,942, 13 JANUARY 2003 (13.01.2003), US" |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase in: |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |