AU2003269548A1 - Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles - Google Patents

Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Info

Publication number
AU2003269548A1
AU2003269548A1 AU2003269548A AU2003269548A AU2003269548A1 AU 2003269548 A1 AU2003269548 A1 AU 2003269548A1 AU 2003269548 A AU2003269548 A AU 2003269548A AU 2003269548 A AU2003269548 A AU 2003269548A AU 2003269548 A1 AU2003269548 A1 AU 2003269548A1
Authority
AU
Australia
Prior art keywords
neutral
processing apparatus
particle beam
beam processing
conversion performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003269548A
Other languages
English (en)
Other versions
AU2003269548A8 (en
Inventor
Bong-Ju Lee
Suk-Jae Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEM Technology Co Ltd
Original Assignee
SEM Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEM Technology Co Ltd filed Critical SEM Technology Co Ltd
Publication of AU2003269548A1 publication Critical patent/AU2003269548A1/en
Publication of AU2003269548A8 publication Critical patent/AU2003269548A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
AU2003269548A 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles Abandoned AU2003269548A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0062648A KR100476903B1 (ko) 2002-10-15 2002-10-15 중성입자 변환 효율이 향상된 중성입자 처리 장치
KR10-2002-0062648 2002-10-15
PCT/KR2003/002146 WO2004036611A2 (en) 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Publications (2)

Publication Number Publication Date
AU2003269548A1 true AU2003269548A1 (en) 2004-05-04
AU2003269548A8 AU2003269548A8 (en) 2004-05-04

Family

ID=32105580

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003269548A Abandoned AU2003269548A1 (en) 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Country Status (3)

Country Link
KR (1) KR100476903B1 (ko)
AU (1) AU2003269548A1 (ko)
WO (1) WO2004036611A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555849B1 (ko) 2003-11-27 2006-03-03 주식회사 셈테크놀러지 중성입자빔 처리장치
KR100714898B1 (ko) * 2005-01-21 2007-05-04 삼성전자주식회사 중성빔을 이용한 기판 처리장치 및 처리방법
KR100851902B1 (ko) 2005-01-27 2008-08-13 삼성전자주식회사 이온 중성화 장치
KR100702010B1 (ko) 2005-03-07 2007-03-30 삼성전자주식회사 반사체, 이를 채택하는 기판 처리 장치 및 이를 사용하는기판 처리 방법
KR100714895B1 (ko) 2005-03-15 2007-05-04 삼성전자주식회사 중성빔 발생용 반사체 및 이를 구비하는 기판 처리장치
KR100722821B1 (ko) * 2005-03-22 2007-05-30 성균관대학교산학협력단 개선된 반사체를 구비한 중성빔 식각장치
US7358484B2 (en) 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
CN102290314B (zh) * 2011-09-26 2013-12-25 中国科学院微电子研究所 产生中性粒子束的装置及方法
KR101816861B1 (ko) 2016-10-21 2018-01-10 (주)제이하라 플라즈마 표면 처리장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
US5519213A (en) * 1993-08-20 1996-05-21 Ebara Corporation Fast atom beam source
JPH07273072A (ja) * 1994-03-30 1995-10-20 Rikagaku Kenkyusho 加工用中性ビーム発生方法
JP3328498B2 (ja) * 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
JPH1083899A (ja) * 1996-09-09 1998-03-31 Ebara Corp 中性粒子線源
KR100367662B1 (ko) * 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
KR100380660B1 (ko) * 2000-11-22 2003-04-18 학교법인 성균관대학 중성빔을 이용한 반도체소자의 식각방법 및 이를 위한식각장치
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
KR100412953B1 (ko) * 2001-11-26 2003-12-31 학교법인 성균관대학 중성빔을 이용한 식각장치

Also Published As

Publication number Publication date
KR100476903B1 (ko) 2005-03-17
WO2004036611A2 (en) 2004-04-29
WO2004036611A3 (en) 2004-06-24
KR20040033524A (ko) 2004-04-28
AU2003269548A8 (en) 2004-05-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase