AU2003262549A1 - Porous metal oxide semiconductor spectrally sensitized with metal oxide - Google Patents

Porous metal oxide semiconductor spectrally sensitized with metal oxide

Info

Publication number
AU2003262549A1
AU2003262549A1 AU2003262549A AU2003262549A AU2003262549A1 AU 2003262549 A1 AU2003262549 A1 AU 2003262549A1 AU 2003262549 A AU2003262549 A AU 2003262549A AU 2003262549 A AU2003262549 A AU 2003262549A AU 2003262549 A1 AU2003262549 A1 AU 2003262549A1
Authority
AU
Australia
Prior art keywords
metal oxide
spectrally sensitized
oxide semiconductor
porous metal
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003262549A
Other languages
English (en)
Inventor
Hieronymus Andriessen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Agfa Gevaert AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV, Agfa Gevaert AG filed Critical Agfa Gevaert NV
Publication of AU2003262549A1 publication Critical patent/AU2003262549A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AU2003262549A 2002-08-13 2003-07-29 Porous metal oxide semiconductor spectrally sensitized with metal oxide Abandoned AU2003262549A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02102131.6 2002-08-13
EP02102131 2002-08-13
PCT/EP2003/050345 WO2004017345A1 (en) 2002-08-13 2003-07-29 Porous metal oxide semiconductor spectrally sensitized with metal oxide

Publications (1)

Publication Number Publication Date
AU2003262549A1 true AU2003262549A1 (en) 2004-03-03

Family

ID=31725484

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003262549A Abandoned AU2003262549A1 (en) 2002-08-13 2003-07-29 Porous metal oxide semiconductor spectrally sensitized with metal oxide

Country Status (4)

Country Link
EP (1) EP1547106A1 (ja)
JP (1) JP2006500764A (ja)
AU (1) AU2003262549A1 (ja)
WO (1) WO2004017345A1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2642169A1 (en) * 2006-02-16 2007-08-30 Solexant Corporation Nanoparticle sensitized nanostructured solar cells
KR101234233B1 (ko) * 2006-05-18 2013-02-18 삼성에스디아이 주식회사 포스페이트를 포함하는 반도체 전극 및 이를 채용한태양전지
US8710354B2 (en) 2007-12-19 2014-04-29 Honeywell International Inc. Solar cell with hyperpolarizable absorber
US8089063B2 (en) 2007-12-19 2012-01-03 Honeywell International Inc. Quantum dot solar cell with electron rich anchor group
US8106388B2 (en) 2007-12-19 2012-01-31 Honeywell International Inc. Quantum dot solar cell with rigid bridge molecule
US8067763B2 (en) 2007-12-19 2011-11-29 Honeywell International Inc. Quantum dot solar cell with conjugated bridge molecule
US8288649B2 (en) 2008-02-26 2012-10-16 Honeywell International Inc. Quantum dot solar cell
US8299355B2 (en) 2008-04-22 2012-10-30 Honeywell International Inc. Quantum dot solar cell
US8373063B2 (en) 2008-04-22 2013-02-12 Honeywell International Inc. Quantum dot solar cell
US8283561B2 (en) 2008-05-13 2012-10-09 Honeywell International Inc. Quantum dot solar cell
US8148632B2 (en) 2008-07-15 2012-04-03 Honeywell International Inc. Quantum dot solar cell
US8455757B2 (en) 2008-08-20 2013-06-04 Honeywell International Inc. Solar cell with electron inhibiting layer
EP2172986B1 (en) 2008-08-27 2013-08-21 Honeywell International Inc. Solar cell having hybrid hetero junction structure
US8227686B2 (en) 2009-02-04 2012-07-24 Honeywell International Inc. Quantum dot solar cell
US8227687B2 (en) 2009-02-04 2012-07-24 Honeywell International Inc. Quantum dot solar cell
US8426728B2 (en) 2009-06-12 2013-04-23 Honeywell International Inc. Quantum dot solar cells
US8372678B2 (en) 2009-12-21 2013-02-12 Honeywell International Inc. Counter electrode for solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH674596A5 (ja) * 1988-02-12 1990-06-15 Sulzer Ag
WO1991016719A2 (en) * 1990-04-17 1991-10-31 Michael Graetzel Photovoltaic cells
DE4302896A1 (de) * 1993-02-02 1994-08-04 Degussa Eisenoxidhaltiges Titandioxidpulver
EP0684208B1 (en) * 1993-12-13 2004-09-01 Ishihara Sangyo Kaisha, Ltd. Ultrafine iron-containing rutile titanium dioxide particle and process for producing the same
DE19613992A1 (de) * 1996-04-09 1997-10-16 Agfa Gevaert Ag Farbfotografisches Silberhalogenidmaterial
JP3918396B2 (ja) * 2000-03-24 2007-05-23 セイコーエプソン株式会社 半導体、半導体の製造方法および太陽電池
JP4763120B2 (ja) * 2000-06-15 2011-08-31 富士フイルム株式会社 光電変換素子およびこれを用いた光電池

Also Published As

Publication number Publication date
EP1547106A1 (en) 2005-06-29
JP2006500764A (ja) 2006-01-05
WO2004017345A1 (en) 2004-02-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase