AU2003252283A1 - Optical sensor, method for manufacturing and driving optical sensor, and method for measuring light intensity - Google Patents

Optical sensor, method for manufacturing and driving optical sensor, and method for measuring light intensity

Info

Publication number
AU2003252283A1
AU2003252283A1 AU2003252283A AU2003252283A AU2003252283A1 AU 2003252283 A1 AU2003252283 A1 AU 2003252283A1 AU 2003252283 A AU2003252283 A AU 2003252283A AU 2003252283 A AU2003252283 A AU 2003252283A AU 2003252283 A1 AU2003252283 A1 AU 2003252283A1
Authority
AU
Australia
Prior art keywords
optical sensor
manufacturing
light intensity
measuring light
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003252283A
Other languages
English (en)
Inventor
Yukihiro Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of AU2003252283A1 publication Critical patent/AU2003252283A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AU2003252283A 2002-08-01 2003-07-29 Optical sensor, method for manufacturing and driving optical sensor, and method for measuring light intensity Abandoned AU2003252283A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2002-225291 2002-08-01
JP2002225291 2002-08-01
JP2002-261244 2002-09-06
JP2002261244 2002-09-06
JP2002324373 2002-11-07
JP2002-324373 2002-11-07
PCT/JP2003/009577 WO2004013915A1 (ja) 2002-08-01 2003-07-29 光センサ、光センサの製造方法および駆動方法、ならびに光強度検出方法

Publications (1)

Publication Number Publication Date
AU2003252283A1 true AU2003252283A1 (en) 2004-02-23

Family

ID=31499105

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003252283A Abandoned AU2003252283A1 (en) 2002-08-01 2003-07-29 Optical sensor, method for manufacturing and driving optical sensor, and method for measuring light intensity

Country Status (3)

Country Link
JP (1) JP3933664B2 (ja)
AU (1) AU2003252283A1 (ja)
WO (1) WO2004013915A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005008787A1 (ja) * 2003-07-18 2005-01-27 Japan Science And Technology Agency 光検出素子
JP4769931B2 (ja) * 2004-02-16 2011-09-07 国立大学法人名古屋大学 カーボンナノチューブに対する電極の形成方法及びそれを用いたカーボンナノチューブｆｅｔ
DE602005009333D1 (de) 2004-02-20 2008-10-09 Univ Florida Halbleiterbauelement und verfahren mit nanoröhren-kontakten
RU2273946C2 (ru) * 2004-05-25 2006-04-10 Геннадий Михайлович Михеев Оптоэлектронное устройство
EP1853708B1 (en) 2005-02-22 2011-10-05 Ramot at Tel Aviv University Ltd. Molecular optoelectronic device and method of fabricating the same
US8624227B2 (en) 2005-02-22 2014-01-07 Ramot At Tel-Aviv University Ltd. Optoelectronic device and method of fabricating the same
JP2007022873A (ja) * 2005-07-20 2007-02-01 National Institute Of Advanced Industrial & Technology 水分散性蛋白質−カーボンナノチューブ複合体、その製造方法及びその用途
JP2007043150A (ja) * 2005-07-29 2007-02-15 Interuniv Micro Electronica Centrum Vzw 細長いナノ構造体を有する波長センシティブ検出器
CN101563788B (zh) * 2006-08-22 2011-12-14 特拉维夫大学拉莫特有限公司 光电装置及其制作方法
JP4947006B2 (ja) * 2008-08-05 2012-06-06 ソニー株式会社 光電変換装置及び光電変換素子
CN101656298B (zh) * 2008-08-19 2012-06-13 鸿富锦精密工业（深圳）有限公司 红外探测器
TWI427277B (zh) * 2008-08-29 2014-02-21 Hon Hai Prec Ind Co Ltd 紅外探測器
JP2013020990A (ja) * 2009-11-02 2013-01-31 Murata Mfg Co Ltd 光電変換素子および光電変換装置
JP5494296B2 (ja) * 2010-07-05 2014-05-14 ソニー株式会社 光電変換装置及び光電変換素子
KR101439407B1 (ko) * 2013-05-20 2014-09-15 한국과학기술연구원 광수용체 단백질 기반 분광광도계, 이의 제조 방법 및 이를 이용한 광 검출 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06294682A (ja) * 1993-04-12 1994-10-21 Fuji Photo Film Co Ltd 光電変換素子
US5438192A (en) * 1993-12-09 1995-08-01 The United States Of America As Represented By The Secretary Of The Army Photodynamic protein-based photodetector and photodetector system for image detection and processing
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
JP2000267223A (ja) * 1999-03-17 2000-09-29 Sanyo Electric Co Ltd 光情報処理素子
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
JP2002334986A (ja) * 2001-03-08 2002-11-22 Sanyo Electric Co Ltd 光透過型画像認識素子および画像認識センサ

Also Published As

Publication number Publication date
WO2004013915A1 (ja) 2004-02-12
JPWO2004013915A1 (ja) 2006-08-24
JP3933664B2 (ja) 2007-06-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase