AU2002351407A1 - Method for forming an improved metal silicide contact to a silicon-containing conductive region - Google Patents

Method for forming an improved metal silicide contact to a silicon-containing conductive region

Info

Publication number
AU2002351407A1
AU2002351407A1 AU2002351407A AU2002351407A AU2002351407A1 AU 2002351407 A1 AU2002351407 A1 AU 2002351407A1 AU 2002351407 A AU2002351407 A AU 2002351407A AU 2002351407 A AU2002351407 A AU 2002351407A AU 2002351407 A1 AU2002351407 A1 AU 2002351407A1
Authority
AU
Australia
Prior art keywords
silicon
forming
metal silicide
conductive region
containing conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002351407A
Inventor
Manfred Horstmann
Volker Kahlert
Karsten Wieczorek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10214065A external-priority patent/DE10214065B4/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2002351407A1 publication Critical patent/AU2002351407A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
AU2002351407A 2002-03-28 2002-12-20 Method for forming an improved metal silicide contact to a silicon-containing conductive region Abandoned AU2002351407A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10214065.0 2002-03-28
DE10214065A DE10214065B4 (en) 2002-03-28 2002-03-28 A method of making an improved metal silicide region in a silicon-containing conductive region in an integrated circuit
US10/282,665 US20030186523A1 (en) 2002-03-28 2002-10-29 Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit
US10/282,665 2002-10-29
PCT/US2002/040806 WO2003083936A1 (en) 2002-03-28 2002-12-20 Method for forming an improved metal silicide contact to a silicon-containing conductive region

Publications (1)

Publication Number Publication Date
AU2002351407A1 true AU2002351407A1 (en) 2003-10-13

Family

ID=28676031

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002351407A Abandoned AU2002351407A1 (en) 2002-03-28 2002-12-20 Method for forming an improved metal silicide contact to a silicon-containing conductive region

Country Status (6)

Country Link
EP (1) EP1490901A1 (en)
JP (1) JP2005522035A (en)
CN (1) CN100380625C (en)
AU (1) AU2002351407A1 (en)
TW (1) TWI263266B (en)
WO (1) WO2003083936A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4819566B2 (en) 2006-04-28 2011-11-24 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
WO2012086540A1 (en) * 2010-12-21 2012-06-28 シャープ株式会社 Thin-film transistor and method for manufacturing thin-film transistor
DE102012003585A1 (en) * 2012-02-27 2013-08-29 Forschungszentrum Jülich GmbH Process for producing a monocrystalline metal-semiconductor compound

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766997A (en) * 1909-11-30 1998-06-16 Nkk Corporation Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions
US5240880A (en) * 1992-05-05 1993-08-31 Zilog, Inc. Ti/TiN/Ti contact metallization
US5365111A (en) * 1992-12-23 1994-11-15 Advanced Micro Devices, Inc. Stable local interconnect/active area silicide structure for VLSI applications
JPH08107087A (en) * 1994-10-06 1996-04-23 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5738917A (en) * 1995-02-24 1998-04-14 Advanced Micro Devices, Inc. Process for in-situ deposition of a Ti/TiN/Ti aluminum underlayer
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US5970370A (en) * 1998-12-08 1999-10-19 Advanced Micro Devices Manufacturing capping layer for the fabrication of cobalt salicide structures
DE19940758A1 (en) * 1999-08-27 2001-03-15 Infineon Technologies Ag Method of manufacturing an HF-FET and HF-FET

Also Published As

Publication number Publication date
CN1623227A (en) 2005-06-01
TW200307988A (en) 2003-12-16
JP2005522035A (en) 2005-07-21
EP1490901A1 (en) 2004-12-29
CN100380625C (en) 2008-04-09
WO2003083936A1 (en) 2003-10-09
TWI263266B (en) 2006-10-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase