AU2002336101A1 - Process for preparing nano-porous metal oxide semiconductor layers - Google Patents

Process for preparing nano-porous metal oxide semiconductor layers

Info

Publication number
AU2002336101A1
AU2002336101A1 AU2002336101A AU2002336101A AU2002336101A1 AU 2002336101 A1 AU2002336101 A1 AU 2002336101A1 AU 2002336101 A AU2002336101 A AU 2002336101A AU 2002336101 A AU2002336101 A AU 2002336101A AU 2002336101 A1 AU2002336101 A1 AU 2002336101A1
Authority
AU
Australia
Prior art keywords
metal oxide
oxide semiconductor
semiconductor layers
porous metal
preparing nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002336101A
Other languages
English (en)
Inventor
Hieronymus Andriessen
Jan Kroon
Joop Van Deelen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Agfa Gevaert AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV, Agfa Gevaert AG filed Critical Agfa Gevaert NV
Publication of AU2002336101A1 publication Critical patent/AU2002336101A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AU2002336101A 2002-09-12 2002-09-12 Process for preparing nano-porous metal oxide semiconductor layers Abandoned AU2002336101A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2002/010270 WO2004025675A1 (en) 2002-09-12 2002-09-12 Process for preparing nano-porous metal oxide semiconductor layers

Publications (1)

Publication Number Publication Date
AU2002336101A1 true AU2002336101A1 (en) 2004-04-30

Family

ID=31984996

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002336101A Abandoned AU2002336101A1 (en) 2002-09-12 2002-09-12 Process for preparing nano-porous metal oxide semiconductor layers

Country Status (4)

Country Link
EP (1) EP1540679A1 (ja)
JP (1) JP2005539377A (ja)
AU (1) AU2002336101A1 (ja)
WO (1) WO2004025675A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101451931B1 (ko) 2012-12-12 2014-10-23 연세대학교 산학협력단 콜로이드 양자점 박막의 제조 방법 및 양자점 태양전지의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995029509A1 (en) * 1994-04-20 1995-11-02 Valence Technology, Inc. Method for producing low porosity electrode
DE19839454A1 (de) * 1998-08-29 2000-03-02 Agfa Gevaert Ag Aufzeichnungsmaterial aus einem Träger und einer auf einer Oberfläche des Trägers aufgebrachten Keramikschicht
SE514600C2 (sv) * 1999-05-25 2001-03-19 Forskarpatent I Uppsala Ab Metod för tillverkning av nanostrukturerade tunnfilmselektroder
JP4763120B2 (ja) * 2000-06-15 2011-08-31 富士フイルム株式会社 光電変換素子およびこれを用いた光電池

Also Published As

Publication number Publication date
EP1540679A1 (en) 2005-06-15
JP2005539377A (ja) 2005-12-22
WO2004025675A1 (en) 2004-03-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase