AU2002309201A1 - Microelectronic device and method of its manufacture - Google Patents

Microelectronic device and method of its manufacture

Info

Publication number
AU2002309201A1
AU2002309201A1 AU2002309201A AU2002309201A AU2002309201A1 AU 2002309201 A1 AU2002309201 A1 AU 2002309201A1 AU 2002309201 A AU2002309201 A AU 2002309201A AU 2002309201 A AU2002309201 A AU 2002309201A AU 2002309201 A1 AU2002309201 A1 AU 2002309201A1
Authority
AU
Australia
Prior art keywords
manufacture
microelectronic device
microelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002309201A
Other languages
English (en)
Inventor
John Carlton Jackson
Alan Mathewson
Alan Morrison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NATIONAL MICROELECTRONIC RESEARCH CENTRE
Original Assignee
NAT MICROELECTRONIC RES CT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT MICROELECTRONIC RES CT filed Critical NAT MICROELECTRONIC RES CT
Publication of AU2002309201A1 publication Critical patent/AU2002309201A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
AU2002309201A 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture Abandoned AU2002309201A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IES20010616 IES20010616A2 (en) 2001-06-28 2001-06-28 Microelectronic device and method of its manufacture
IES010616 2001-06-28
PCT/IE2002/000074 WO2003003476A2 (fr) 2001-06-28 2002-06-05 Dispositif micro-electronique et procede de fabrication associe

Publications (1)

Publication Number Publication Date
AU2002309201A1 true AU2002309201A1 (en) 2003-03-03

Family

ID=11042806

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002309201A Abandoned AU2002309201A1 (en) 2001-06-28 2002-06-05 Microelectronic device and method of its manufacture

Country Status (3)

Country Link
AU (1) AU2002309201A1 (fr)
IE (1) IES20010616A2 (fr)
WO (1) WO2003003476A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004102680A1 (fr) 2003-05-14 2004-11-25 University College Cork - National University Of Ireland, Cork A photodiode
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
EP1679749A1 (fr) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Photodiode à Semiconducteur et Procédé de fabrication
US8093624B1 (en) 2006-02-15 2012-01-10 Massachusetts Institute Of Technology High fill-factor avalanche photodiode
EP2040308B1 (fr) 2006-07-03 2016-04-20 Hamamatsu Photonics K.K. Ensemble photodiode
GB2485400B (en) * 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
EP3475987A4 (fr) * 2016-06-21 2020-01-01 Shenzhen Xpectvision Technology Co., Ltd. Capteur d'images basé sur des photodiodes à avalanche
CN109459149A (zh) * 2018-10-11 2019-03-12 桂林电子科技大学 一种高精度单光子探测芯片实时温度测量及性能优化系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857759A (ja) * 1981-10-01 1983-04-06 Fujitsu Ltd 受光素子のガ−ドリング形成方法
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
FR2633101B1 (fr) * 1988-06-16 1992-02-07 Commissariat Energie Atomique Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication
CA2070708C (fr) * 1991-08-08 1997-04-29 Ichiro Kasai Detecteur de lumieres visible et infrarouge a antimoniure d'indium comportant une surface receptrice sans clignotement
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
IT1317199B1 (it) * 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali

Also Published As

Publication number Publication date
WO2003003476A3 (fr) 2003-12-24
IES20010616A2 (en) 2002-05-15
WO2003003476A2 (fr) 2003-01-09

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase