AU2002224015A1 - Tantalum oxide film, use thereof, and method and composition for forming the same - Google Patents

Tantalum oxide film, use thereof, and method and composition for forming the same

Info

Publication number
AU2002224015A1
AU2002224015A1 AU2002224015A AU2401502A AU2002224015A1 AU 2002224015 A1 AU2002224015 A1 AU 2002224015A1 AU 2002224015 A AU2002224015 A AU 2002224015A AU 2401502 A AU2401502 A AU 2401502A AU 2002224015 A1 AU2002224015 A1 AU 2002224015A1
Authority
AU
Australia
Prior art keywords
composition
forming
same
oxide film
tantalum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002224015A
Other languages
English (en)
Inventor
Hitoshi Kato
Yasuo Matsuki
Sachiko Okada
Hiroshi Shiho
Isamu Yonekura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000353898A external-priority patent/JP3944894B2/ja
Priority claimed from JP2001045379A external-priority patent/JP2002246385A/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of AU2002224015A1 publication Critical patent/AU2002224015A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Paints Or Removers (AREA)
AU2002224015A 2000-11-21 2001-11-07 Tantalum oxide film, use thereof, and method and composition for forming the same Abandoned AU2002224015A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000353898A JP3944894B2 (ja) 2000-11-21 2000-11-21 酸化タンタル膜形成用組成物および酸化タンタル膜形成方法
JP2000-353898 2000-11-21
JP2001045379A JP2002246385A (ja) 2001-02-21 2001-02-21 タンタル含有生成物および酸化タンタル膜の製造
JP2001-45379 2001-02-21
PCT/JP2001/009739 WO2002043131A1 (en) 2000-11-21 2001-11-07 Tantalum oxide film, use thereof, and method and composition for forming the same

Publications (1)

Publication Number Publication Date
AU2002224015A1 true AU2002224015A1 (en) 2002-06-03

Family

ID=26604341

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002224015A Abandoned AU2002224015A1 (en) 2000-11-21 2001-11-07 Tantalum oxide film, use thereof, and method and composition for forming the same

Country Status (5)

Country Link
US (1) US6806210B2 (https=)
KR (1) KR20020072289A (https=)
AU (1) AU2002224015A1 (https=)
TW (1) TWI296830B (https=)
WO (1) WO2002043131A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385952B1 (ko) * 2001-01-19 2003-06-02 삼성전자주식회사 탄탈륨 산화막을 가진 반도체 커패시터 및 그의 제조방법
KR100874399B1 (ko) * 2002-07-18 2008-12-17 삼성전자주식회사 원자층 증착법을 이용한 물질 형성방법, 및 이를 이용한반도체 장치의 캐패시터 형성방법
FR2847593A1 (fr) * 2002-11-26 2004-05-28 St Microelectronics Sa Procede et dispositif de realisation d'une couche de pentoxyde de tantale sur un materiau porteur, en particulier du niture de titane, et circuit integre incorporant une couche de pentoxyde de tantale
JP2004359532A (ja) * 2003-04-09 2004-12-24 Jsr Corp タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法
US20120108745A1 (en) * 2010-11-01 2012-05-03 Canon Kabushiki Kaisha Method for producing tantalum oxide particles
JP5933397B2 (ja) * 2012-08-30 2016-06-08 エイヴィーエックス コーポレイション 固体電解コンデンサの製造方法および固体電解コンデンサ
US9824826B2 (en) * 2013-05-13 2017-11-21 Avx Corporation Solid electrolytic capacitor containing conductive polymer particles
US9472350B2 (en) * 2013-05-13 2016-10-18 Avx Corporation Solid electrolytic capacitor containing a multi-layered adhesion coating
GB2514486B (en) * 2013-05-13 2018-08-29 Avx Corp Solid electrolytic capacitor containing a pre-coat layer
US10920028B2 (en) 2014-06-18 2021-02-16 Dupont Safety & Construction, Inc. Plexifilamentary sheets

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160915A (en) * 1981-03-27 1982-10-04 Nippon Soda Co Ltd Composition forming thin tantalum oxide film
JPS5978929A (ja) 1982-10-28 1984-05-08 Nippon Soda Co Ltd 酸化ニオブの薄膜形成用組成物
JPS59181413A (ja) 1983-03-31 1984-10-15 日本曹達株式会社 酸化タンタル透明誘電体膜およびその製造方法
JP3703569B2 (ja) 1996-04-02 2005-10-05 ソニー株式会社 光記録媒体及びその記録再生方法、記録再生装置
JP3217699B2 (ja) * 1996-04-19 2001-10-09 東京応化工業株式会社 Ｂｉ系誘電体薄膜形成用塗布液及びこれを用いて形成した誘電体薄膜
JP2000173094A (ja) 1998-12-10 2000-06-23 Nippon Columbia Co Ltd 光ディスク用原盤の製造方法及び光ディスク用原盤の製造装置
JP2001291283A (ja) 2000-04-03 2001-10-19 Victor Co Of Japan Ltd 光ディスク

Also Published As

Publication number Publication date
KR20020072289A (ko) 2002-09-14
WO2002043131A1 (en) 2002-05-30
TWI296830B (https=) 2008-05-11
US20030003235A1 (en) 2003-01-02
US6806210B2 (en) 2004-10-19

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