AU2002222464A1 - A method ad system for measuring in patterned structures - Google Patents
A method ad system for measuring in patterned structuresInfo
- Publication number
- AU2002222464A1 AU2002222464A1 AU2002222464A AU2246402A AU2002222464A1 AU 2002222464 A1 AU2002222464 A1 AU 2002222464A1 AU 2002222464 A AU2002222464 A AU 2002222464A AU 2246402 A AU2246402 A AU 2246402A AU 2002222464 A1 AU2002222464 A1 AU 2002222464A1
- Authority
- AU
- Australia
- Prior art keywords
- measuring
- patterned structures
- patterned
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electromagnetism (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL14017900A IL140179A (en) | 2000-12-07 | 2000-12-07 | Method and system for measuring in patterned structures |
IL140179 | 2000-12-07 | ||
PCT/IL2001/001136 WO2002046692A1 (en) | 2000-12-07 | 2001-12-07 | A method ad system for measuring in patterned structures |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002222464A1 true AU2002222464A1 (en) | 2002-06-18 |
Family
ID=11074898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002222464A Abandoned AU2002222464A1 (en) | 2000-12-07 | 2001-12-07 | A method ad system for measuring in patterned structures |
Country Status (5)
Country | Link |
---|---|
US (1) | US6650424B2 (en) |
EP (1) | EP1352211B1 (en) |
AU (1) | AU2002222464A1 (en) |
IL (1) | IL140179A (en) |
WO (1) | WO2002046692A1 (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
WO2002088677A1 (en) * | 2001-04-26 | 2002-11-07 | Therma-Wave, Inc. | Measurement system cluster |
US7089075B2 (en) * | 2001-05-04 | 2006-08-08 | Tokyo Electron Limited | Systems and methods for metrology recipe and model generation |
US6773939B1 (en) * | 2001-07-02 | 2004-08-10 | Advanced Micro Devices, Inc. | Method and apparatus for determining critical dimension variation in a line structure |
IL161274A0 (en) * | 2001-10-10 | 2004-09-27 | Accent Optical Tech Inc | Determination of center of focus by cross-section analysis |
US6894790B2 (en) * | 2001-11-13 | 2005-05-17 | Hitachi High-Technologies Corporation | Micropattern shape measuring system and method |
JP3817464B2 (en) * | 2001-11-13 | 2006-09-06 | 株式会社日立ハイテクノロジーズ | Fine pattern three-dimensional shape measurement system and three-dimensional shape measurement method |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
IL148484A (en) * | 2002-03-04 | 2008-11-26 | Nova Measuring Instr Ltd | Optical measurements of patterned structures |
IL150438A0 (en) * | 2002-06-26 | 2002-12-01 | Nova Measuring Instr Ltd | Method of thin films measurement |
KR100531952B1 (en) * | 2003-01-30 | 2005-11-30 | 동부아남반도체 주식회사 | A monitoring pattern of Shallow Trench Isolation profile |
US7080330B1 (en) * | 2003-03-05 | 2006-07-18 | Advanced Micro Devices, Inc. | Concurrent measurement of critical dimension and overlay in semiconductor manufacturing |
JP4078257B2 (en) * | 2003-06-27 | 2008-04-23 | 株式会社日立ハイテクノロジーズ | Sample size measuring method and charged particle beam apparatus |
ATE476687T1 (en) * | 2003-12-19 | 2010-08-15 | Ibm | DIFFERENTIAL METROLOGY FOR CRITICAL DIMENSIONS AND SUPERPOSITION |
DE102004006258B4 (en) * | 2004-02-09 | 2007-08-02 | Infineon Technologies Ag | Method for matching two measuring methods for the measurement of structure widths on a substrate |
US7355709B1 (en) * | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
US7783101B2 (en) * | 2004-12-15 | 2010-08-24 | Hitachi Global Storage Technologies Netherlands B.V. | Method and system for determining dimensions of a structure having a re-entrant profile |
US20070091325A1 (en) * | 2005-01-07 | 2007-04-26 | Mehrdad Nikoonahad | Multi-channel optical metrology |
US20070046954A1 (en) * | 2005-08-24 | 2007-03-01 | Asml Netherlands B.V. | Method of verifying consistent measurement between a plurality of CD metrology tools |
DE102006002753B4 (en) * | 2006-01-20 | 2010-09-30 | X-Fab Semiconductor Foundries Ag | Method and apparatus for evaluating the undercut of deep trench structures in SOI slices |
US7561282B1 (en) | 2006-03-27 | 2009-07-14 | Kla-Tencor Technologies Corporation | Techniques for determining overlay and critical dimension using a single metrology tool |
EP2583056B1 (en) * | 2010-06-17 | 2018-12-12 | Nova Measuring Instruments Ltd | Method and system for optimizing optical inspection of patterned structures |
US10151986B2 (en) * | 2014-07-07 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology based on measurements of proxy structures |
US9262819B1 (en) | 2014-09-26 | 2016-02-16 | GlobalFoundries, Inc. | System and method for estimating spatial characteristics of integrated circuits |
CN105044941B (en) * | 2015-08-03 | 2018-01-12 | 深圳市华星光电技术有限公司 | The size detecting method of litho pattern |
WO2017021968A1 (en) * | 2015-08-04 | 2017-02-09 | Nova Measuring Instruments Ltd. | Hybrid measurement system and method for measuring in thin films |
US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
WO2018154588A1 (en) * | 2017-02-27 | 2018-08-30 | Nova Measuring Instruments Ltd | An apparatus and method for electrical test prediction |
CN111566566B (en) * | 2018-06-14 | 2022-04-08 | 诺威有限公司 | Metrology and process control for semiconductor manufacturing |
US11300948B2 (en) * | 2019-06-27 | 2022-04-12 | Nova Ltd | Process control of semiconductor fabrication based on spectra quality metrics |
KR102409758B1 (en) * | 2020-06-01 | 2022-06-17 | 파크시스템스 주식회사 | Atomic force microscope equiped with optical measurement device and method for acquiring data of surface of mesurement object using the same |
US11619649B1 (en) | 2021-11-26 | 2023-04-04 | Park Systems Corp. | Atomic force microscope equipped with optical measurement device and method of acquiring information on surface of measurement target using the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5607800A (en) * | 1995-02-15 | 1997-03-04 | Lucent Technologies Inc. | Method and arrangement for characterizing micro-size patterns |
US5739909A (en) * | 1995-10-10 | 1998-04-14 | Lucent Technologies Inc. | Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry |
US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
JP4327266B2 (en) * | 1997-02-26 | 2009-09-09 | 株式会社東芝 | Pattern dimension evaluation method and pattern formation method |
US5867276A (en) * | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
US6407373B1 (en) | 1999-06-15 | 2002-06-18 | Applied Materials, Inc. | Apparatus and method for reviewing defects on an object |
KR100702741B1 (en) * | 1999-06-29 | 2007-04-03 | 어플라이드 머티어리얼스, 인코포레이티드 | Integrated critical dimension control for semiconductor device manufacturing |
US6433871B1 (en) * | 2001-05-25 | 2002-08-13 | Advanced Micron Devices, Inc. | Method of using scatterometry measurements to determine and control gate electrode profiles |
-
2000
- 2000-12-07 IL IL14017900A patent/IL140179A/en active IP Right Grant
-
2001
- 2001-12-07 US US10/005,118 patent/US6650424B2/en not_active Expired - Lifetime
- 2001-12-07 EP EP01999783.2A patent/EP1352211B1/en not_active Expired - Lifetime
- 2001-12-07 WO PCT/IL2001/001136 patent/WO2002046692A1/en not_active Application Discontinuation
- 2001-12-07 AU AU2002222464A patent/AU2002222464A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1352211A1 (en) | 2003-10-15 |
US6650424B2 (en) | 2003-11-18 |
WO2002046692A1 (en) | 2002-06-13 |
IL140179A (en) | 2004-09-27 |
US20020090744A1 (en) | 2002-07-11 |
EP1352211B1 (en) | 2019-10-16 |
IL140179A0 (en) | 2002-02-10 |
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