AU2002222464A1 - A method ad system for measuring in patterned structures - Google Patents

A method ad system for measuring in patterned structures

Info

Publication number
AU2002222464A1
AU2002222464A1 AU2002222464A AU2246402A AU2002222464A1 AU 2002222464 A1 AU2002222464 A1 AU 2002222464A1 AU 2002222464 A AU2002222464 A AU 2002222464A AU 2246402 A AU2246402 A AU 2246402A AU 2002222464 A1 AU2002222464 A1 AU 2002222464A1
Authority
AU
Australia
Prior art keywords
measuring
patterned structures
patterned
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002222464A
Inventor
Boaz Brill
Moshe Finarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nova Ltd
Original Assignee
Nova Measuring Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nova Measuring Instruments Ltd filed Critical Nova Measuring Instruments Ltd
Publication of AU2002222464A1 publication Critical patent/AU2002222464A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AU2002222464A 2000-12-07 2001-12-07 A method ad system for measuring in patterned structures Abandoned AU2002222464A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IL14017900A IL140179A (en) 2000-12-07 2000-12-07 Method and system for measuring in patterned structures
IL140179 2000-12-07
PCT/IL2001/001136 WO2002046692A1 (en) 2000-12-07 2001-12-07 A method ad system for measuring in patterned structures

Publications (1)

Publication Number Publication Date
AU2002222464A1 true AU2002222464A1 (en) 2002-06-18

Family

ID=11074898

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002222464A Abandoned AU2002222464A1 (en) 2000-12-07 2001-12-07 A method ad system for measuring in patterned structures

Country Status (5)

Country Link
US (1) US6650424B2 (en)
EP (1) EP1352211B1 (en)
AU (1) AU2002222464A1 (en)
IL (1) IL140179A (en)
WO (1) WO2002046692A1 (en)

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US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
WO2002088677A1 (en) * 2001-04-26 2002-11-07 Therma-Wave, Inc. Measurement system cluster
US7089075B2 (en) * 2001-05-04 2006-08-08 Tokyo Electron Limited Systems and methods for metrology recipe and model generation
US6773939B1 (en) * 2001-07-02 2004-08-10 Advanced Micro Devices, Inc. Method and apparatus for determining critical dimension variation in a line structure
IL161274A0 (en) * 2001-10-10 2004-09-27 Accent Optical Tech Inc Determination of center of focus by cross-section analysis
US6894790B2 (en) * 2001-11-13 2005-05-17 Hitachi High-Technologies Corporation Micropattern shape measuring system and method
JP3817464B2 (en) * 2001-11-13 2006-09-06 株式会社日立ハイテクノロジーズ Fine pattern three-dimensional shape measurement system and three-dimensional shape measurement method
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
IL148484A (en) * 2002-03-04 2008-11-26 Nova Measuring Instr Ltd Optical measurements of patterned structures
IL150438A0 (en) * 2002-06-26 2002-12-01 Nova Measuring Instr Ltd Method of thin films measurement
KR100531952B1 (en) * 2003-01-30 2005-11-30 동부아남반도체 주식회사 A monitoring pattern of Shallow Trench Isolation profile
US7080330B1 (en) * 2003-03-05 2006-07-18 Advanced Micro Devices, Inc. Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
JP4078257B2 (en) * 2003-06-27 2008-04-23 株式会社日立ハイテクノロジーズ Sample size measuring method and charged particle beam apparatus
ATE476687T1 (en) * 2003-12-19 2010-08-15 Ibm DIFFERENTIAL METROLOGY FOR CRITICAL DIMENSIONS AND SUPERPOSITION
DE102004006258B4 (en) * 2004-02-09 2007-08-02 Infineon Technologies Ag Method for matching two measuring methods for the measurement of structure widths on a substrate
US7355709B1 (en) * 2004-02-23 2008-04-08 Kla-Tencor Technologies Corp. Methods and systems for optical and non-optical measurements of a substrate
US7783101B2 (en) * 2004-12-15 2010-08-24 Hitachi Global Storage Technologies Netherlands B.V. Method and system for determining dimensions of a structure having a re-entrant profile
US20070091325A1 (en) * 2005-01-07 2007-04-26 Mehrdad Nikoonahad Multi-channel optical metrology
US20070046954A1 (en) * 2005-08-24 2007-03-01 Asml Netherlands B.V. Method of verifying consistent measurement between a plurality of CD metrology tools
DE102006002753B4 (en) * 2006-01-20 2010-09-30 X-Fab Semiconductor Foundries Ag Method and apparatus for evaluating the undercut of deep trench structures in SOI slices
US7561282B1 (en) 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
EP2583056B1 (en) * 2010-06-17 2018-12-12 Nova Measuring Instruments Ltd Method and system for optimizing optical inspection of patterned structures
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
US9262819B1 (en) 2014-09-26 2016-02-16 GlobalFoundries, Inc. System and method for estimating spatial characteristics of integrated circuits
CN105044941B (en) * 2015-08-03 2018-01-12 深圳市华星光电技术有限公司 The size detecting method of litho pattern
WO2017021968A1 (en) * 2015-08-04 2017-02-09 Nova Measuring Instruments Ltd. Hybrid measurement system and method for measuring in thin films
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2018154588A1 (en) * 2017-02-27 2018-08-30 Nova Measuring Instruments Ltd An apparatus and method for electrical test prediction
CN111566566B (en) * 2018-06-14 2022-04-08 诺威有限公司 Metrology and process control for semiconductor manufacturing
US11300948B2 (en) * 2019-06-27 2022-04-12 Nova Ltd Process control of semiconductor fabrication based on spectra quality metrics
KR102409758B1 (en) * 2020-06-01 2022-06-17 파크시스템스 주식회사 Atomic force microscope equiped with optical measurement device and method for acquiring data of surface of mesurement object using the same
US11619649B1 (en) 2021-11-26 2023-04-04 Park Systems Corp. Atomic force microscope equipped with optical measurement device and method of acquiring information on surface of measurement target using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607800A (en) * 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
US5739909A (en) * 1995-10-10 1998-04-14 Lucent Technologies Inc. Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
JP4327266B2 (en) * 1997-02-26 2009-09-09 株式会社東芝 Pattern dimension evaluation method and pattern formation method
US5867276A (en) * 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US6407373B1 (en) 1999-06-15 2002-06-18 Applied Materials, Inc. Apparatus and method for reviewing defects on an object
KR100702741B1 (en) * 1999-06-29 2007-04-03 어플라이드 머티어리얼스, 인코포레이티드 Integrated critical dimension control for semiconductor device manufacturing
US6433871B1 (en) * 2001-05-25 2002-08-13 Advanced Micron Devices, Inc. Method of using scatterometry measurements to determine and control gate electrode profiles

Also Published As

Publication number Publication date
EP1352211A1 (en) 2003-10-15
US6650424B2 (en) 2003-11-18
WO2002046692A1 (en) 2002-06-13
IL140179A (en) 2004-09-27
US20020090744A1 (en) 2002-07-11
EP1352211B1 (en) 2019-10-16
IL140179A0 (en) 2002-02-10

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