AU2002221711A1 - Porous layers and method for production thereof by means of spin-coating - Google Patents

Porous layers and method for production thereof by means of spin-coating

Info

Publication number
AU2002221711A1
AU2002221711A1 AU2002221711A AU2171102A AU2002221711A1 AU 2002221711 A1 AU2002221711 A1 AU 2002221711A1 AU 2002221711 A AU2002221711 A AU 2002221711A AU 2171102 A AU2171102 A AU 2171102A AU 2002221711 A1 AU2002221711 A1 AU 2002221711A1
Authority
AU
Australia
Prior art keywords
spin
coating
production
porous layers
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002221711A
Inventor
Thomas W. Bein
Svetlana Ivanova Mintova
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2002221711A1 publication Critical patent/AU2002221711A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J29/00—Catalysts comprising molecular sieves
    • B01J29/03—Catalysts comprising molecular sieves not having base-exchange properties
    • B01J29/035—Microporous crystalline materials not having base exchange properties, such as silica polymorphs, e.g. silicalites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/02—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a matt or rough surface
AU2002221711A 2000-10-19 2001-10-19 Porous layers and method for production thereof by means of spin-coating Abandoned AU2002221711A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10052075A DE10052075A1 (en) 2000-10-19 2000-10-19 Porous layers and a process for their production by means of spin coating
DE10052075.8 2000-10-19
PCT/EP2001/012153 WO2002032589A2 (en) 2000-10-19 2001-10-19 Porous layers and method for production thereof by means of spin-coating

Publications (1)

Publication Number Publication Date
AU2002221711A1 true AU2002221711A1 (en) 2002-04-29

Family

ID=7660471

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002221711A Abandoned AU2002221711A1 (en) 2000-10-19 2001-10-19 Porous layers and method for production thereof by means of spin-coating

Country Status (5)

Country Link
US (1) US20040028809A1 (en)
EP (1) EP1333936A2 (en)
AU (1) AU2002221711A1 (en)
DE (1) DE10052075A1 (en)
WO (1) WO2002032589A2 (en)

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FR2827856B1 (en) * 2001-07-25 2004-06-04 Saint Gobain Quartz MINERAL FIBER PROVIDED WITH A MICROPOROUS OR MESOPOROUS COATING
DE10146687C1 (en) * 2001-09-21 2003-06-26 Flabeg Solarglas Gmbh & Co Kg Glass with a porous anti-reflective surface coating and method for producing the glass and use of such a glass
US6932851B2 (en) 2001-11-02 2005-08-23 The Trustees Of Princeton University Methods for the preparation of metallic alloy nanoparticles and compositions thereof
US7303985B2 (en) * 2003-11-17 2007-12-04 Intel Corporation Zeolite-carbon doped oxide composite low k dielectric
DE602004021085D1 (en) * 2004-03-11 2009-06-25 Corning Inc Ceramic composition with a silsesquioxane polymer
DE102004028305B3 (en) * 2004-06-11 2006-01-12 J. Eberspächer GmbH & Co. KG Porous vaporizer medium used in vaporizing burners in vehicle heating devices comprises a body having a pore structure and preferred pore orientation consisting of long chain particles made from magnetizable or magnetized material
DE102004032962B4 (en) * 2004-07-07 2007-11-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device with a zeolite coating applied to a support and method for producing this zeolite coating
US7303989B2 (en) * 2004-11-22 2007-12-04 Intel Corporation Using zeolites to improve the mechanical strength of low-k interlayer dielectrics
US7955645B2 (en) * 2004-11-24 2011-06-07 Sensirion Ag Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate
DE102005020168A1 (en) * 2005-04-28 2006-11-02 Schott Ag Coating glass or ceramic substrate with anti-reflective layer using sol-gel process, employs e.g. silicon-aluminum mixed oxide with adsorbed hydrophobe present in sol-gel binder
US8399057B2 (en) * 2005-06-08 2013-03-19 The Regents Of The University Of California Ordered vertically oriented porous inorganic films produced through solution processing
DE102005038044A1 (en) * 2005-08-10 2007-02-15 Sortech Ag Layered composite and its production
US7427570B2 (en) * 2005-09-01 2008-09-23 Micron Technology, Inc. Porous organosilicate layers, and vapor deposition systems and methods for preparing same
DE102006041469B3 (en) 2006-09-02 2008-01-31 Schott Ag Coating anti-reflection layer containing silicon dioxide on a borosilicate glass body comprises wetting the body containing e.g. silicon dioxide with a coating solution containing e.g. hydrochloric acid, followed by drying and annealing
DE102007010544A1 (en) 2007-03-05 2008-09-11 Wacker Chemie Ag Layers of heterosubstituted silsesquioxanes
EP2230545A1 (en) 2009-03-19 2010-09-22 BRITISH TELECOMMUNICATIONS public limited company Passive remote air flow and cable detection
EP2430653B1 (en) * 2009-05-08 2019-03-13 1366 Technologies Inc. Porous lift-off layer for selective removal of deposited films
US8491962B2 (en) * 2010-04-02 2013-07-23 National Taiwan University Method for manufacturing a low-k layer
EP2424270B1 (en) * 2010-08-23 2014-05-21 Knowles Electronics Asia PTE. Ltd. Loudspeaker system with improved sound
DE102010054858C5 (en) 2010-12-17 2024-04-11 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh Method and device for producing a reflection-reducing coating
CN102774851A (en) * 2012-08-06 2012-11-14 黑龙江省科学院高技术研究院 Method for preparing nano sillicalite-1 type total-silicalite molecular sieve
US8794373B1 (en) * 2013-03-15 2014-08-05 Bose Corporation Three-dimensional air-adsorbing structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795543A (en) * 1987-05-26 1989-01-03 Transducer Research, Inc. Spin coating of electrolytes
US5151110A (en) * 1990-09-11 1992-09-29 University Of New Mexico Molecular sieve sensors for selective detection at the nanogram level
JPH05115828A (en) * 1991-10-30 1993-05-14 Canon Inc Coating device
FR2708482B1 (en) * 1993-07-29 1995-09-29 Inst Francais Du Petrole Process for the manufacture of catalysts on supports including a step of centrifuging the support after coating.
US5591517A (en) * 1993-08-31 1997-01-07 Sumitomo Osaka Cement Co., Ltd. Antireflection film
CN1057611C (en) * 1993-08-31 2000-10-18 住友水泥株式会社 Antireflection film
GB9413863D0 (en) * 1994-07-08 1994-08-24 Exxon Chemical Patents Inc Molecular sieves and processes for their manufacture
SE9600970D0 (en) * 1996-03-14 1996-03-14 Johan Sterte Process for making very thin films of molecular sieves
US6066401A (en) * 1998-02-25 2000-05-23 National Research Council Of Canada Wide-band two-layer antireflection coating for optical surfaces
US6528034B1 (en) * 1999-11-09 2003-03-04 Board Of Trustees Of Michigan State University Ultra-stable lamellar mesoporous silica compositions and process for the prepration thereof
JP2004504716A (en) * 2000-07-13 2004-02-12 ザ　リージェンツ　オブ　ザ　ユニバーシティ　オブ　カリフォルニア Silica zeolite low dielectric constant thin film

Also Published As

Publication number Publication date
DE10052075A1 (en) 2002-05-02
WO2002032589A3 (en) 2003-06-05
US20040028809A1 (en) 2004-02-12
EP1333936A2 (en) 2003-08-13
WO2002032589A2 (en) 2002-04-25

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