AU2002214654A1 - Magnetic layer formed of multiple sub-element layers - Google Patents

Magnetic layer formed of multiple sub-element layers

Info

Publication number
AU2002214654A1
AU2002214654A1 AU2002214654A AU1465402A AU2002214654A1 AU 2002214654 A1 AU2002214654 A1 AU 2002214654A1 AU 2002214654 A AU2002214654 A AU 2002214654A AU 1465402 A AU1465402 A AU 1465402A AU 2002214654 A1 AU2002214654 A1 AU 2002214654A1
Authority
AU
Australia
Prior art keywords
layer formed
magnetic layer
multiple sub
element layers
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214654A
Inventor
Bradley N. Engel
Jason A. Janesky
Nicholas D. Rizzo
Saied Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002214654A1 publication Critical patent/AU2002214654A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block
AU2002214654A 2000-10-24 2001-10-16 Magnetic layer formed of multiple sub-element layers Abandoned AU2002214654A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09695467 2000-10-24
US09/695,467 2000-10-24
US09/695,467 US6579625B1 (en) 2000-10-24 2000-10-24 Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
PCT/US2001/042775 WO2002035559A2 (en) 2000-10-24 2001-10-16 Magnetic layer formed of multiple sub-element layers

Publications (1)

Publication Number Publication Date
AU2002214654A1 true AU2002214654A1 (en) 2002-05-06

Family

ID=24793090

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214654A Abandoned AU2002214654A1 (en) 2000-10-24 2001-10-16 Magnetic layer formed of multiple sub-element layers

Country Status (3)

Country Link
US (1) US6579625B1 (en)
AU (1) AU2002214654A1 (en)
WO (1) WO2002035559A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1418590A1 (en) * 2002-11-07 2004-05-12 Interuniversitair Micro-Elektronica Centrum Vzw Magnetic device
EP1418591A3 (en) * 2002-11-06 2005-02-09 Interuniversitair Microelektronica Centrum Vzw Magnetic device
US7068537B2 (en) 2002-11-06 2006-06-27 Interuniversitair Microelektronica Centrum (Imec) Magnetic device and method of making the same
US6969559B1 (en) * 2003-08-19 2005-11-29 The United States Of America As Represented By The Secretary Of The Army Structures producing a magnetic field with a gradient
US8144425B2 (en) * 2003-12-15 2012-03-27 Seagate Technology Llc Magnetic recording head with compact yoke
US7580228B1 (en) * 2004-05-29 2009-08-25 Lauer Mark A Current perpendicular to plane sensor with non-rectangular sense layer stack
US9019758B2 (en) 2010-09-14 2015-04-28 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100474A (en) 1981-12-11 1983-06-15 Matsushita Electric Ind Co Ltd Magneto-resistance effect element
JPH08203032A (en) 1995-01-27 1996-08-09 Hitachi Ltd Magneto-resistance effect reproducing head
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5608593A (en) 1995-03-09 1997-03-04 Quantum Peripherals Colorado, Inc. Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
US5732016A (en) * 1996-07-02 1998-03-24 Motorola Memory cell structure in a magnetic random access memory and a method for fabricating thereof
US5757695A (en) * 1997-02-05 1998-05-26 Motorola, Inc. Mram with aligned magnetic vectors
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
JPH11126933A (en) 1997-10-23 1999-05-11 Sanyo Electric Co Ltd Magnetoresistance effect element
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
US6134139A (en) * 1999-07-28 2000-10-17 Hewlett-Packard Magnetic memory structure with improved half-select margin
US6587317B2 (en) * 2000-05-03 2003-07-01 International Business Machines Corporation Spin valve sensor having a pinned layer structure composed of cobalt iron vanadium (CoFeV)

Also Published As

Publication number Publication date
WO2002035559A2 (en) 2002-05-02
WO2002035559A3 (en) 2002-07-18
US6579625B1 (en) 2003-06-17

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