AU2001293910A1 - Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix - Google Patents

Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix

Info

Publication number
AU2001293910A1
AU2001293910A1 AU2001293910A AU9391001A AU2001293910A1 AU 2001293910 A1 AU2001293910 A1 AU 2001293910A1 AU 2001293910 A AU2001293910 A AU 2001293910A AU 9391001 A AU9391001 A AU 9391001A AU 2001293910 A1 AU2001293910 A1 AU 2001293910A1
Authority
AU
Australia
Prior art keywords
optical sensor
matrix
semiconductor layer
photosensitive semiconductor
active matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001293910A
Other languages
English (en)
Inventor
Eric Sanson
Nicolas Szydlo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales Avionics LCD SA
Original Assignee
Thales Avionics LCD SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales Avionics LCD SA filed Critical Thales Avionics LCD SA
Publication of AU2001293910A1 publication Critical patent/AU2001293910A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
AU2001293910A 2000-09-19 2001-09-18 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix Abandoned AU2001293910A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0011927A FR2814281B1 (fr) 2000-09-19 2000-09-19 Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
FR0011927 2000-09-19
PCT/FR2001/002900 WO2002025699A2 (fr) 2000-09-19 2001-09-18 Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

Publications (1)

Publication Number Publication Date
AU2001293910A1 true AU2001293910A1 (en) 2002-04-02

Family

ID=8854450

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001293910A Abandoned AU2001293910A1 (en) 2000-09-19 2001-09-18 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix

Country Status (7)

Country Link
US (1) US6815716B2 (fr)
EP (1) EP1332519B1 (fr)
JP (1) JP2004510328A (fr)
AU (1) AU2001293910A1 (fr)
DE (1) DE60121785T2 (fr)
FR (1) FR2814281B1 (fr)
WO (1) WO2002025699A2 (fr)

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FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
FR2826766B1 (fr) * 2001-06-29 2003-10-31 Thales Avionics Lcd Matrice active de transistors en couches minces ou tft pour capteur optique ou ecran de visualisation
US7009663B2 (en) 2003-12-17 2006-03-07 Planar Systems, Inc. Integrated optical light sensitive active matrix liquid crystal display
US7408598B2 (en) 2002-02-20 2008-08-05 Planar Systems, Inc. Light sensitive display with selected interval of light sensitive elements
US7053967B2 (en) 2002-05-23 2006-05-30 Planar Systems, Inc. Light sensitive display
US6738178B2 (en) * 2002-06-27 2004-05-18 Koninklijke Philips Electronics N.V. Electrically configurable photonic crystal
US20080084374A1 (en) 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
US7773139B2 (en) * 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US8184974B2 (en) 2006-09-11 2012-05-22 Lumexis Corporation Fiber-to-the-seat (FTTS) fiber distribution system
JP5524859B2 (ja) * 2007-12-18 2014-06-18 ティ． ミハレヴィチュ，マレク 量子トンネル効果光検出器アレイ
WO2011017233A1 (fr) 2009-08-06 2011-02-10 Lumexis Corporation Système de divertissement en vol par fibre jusqu’aux sièges à mise en réseau série
WO2011020071A1 (fr) 2009-08-14 2011-02-17 Lumexis Corp. Dispositif de connexion d'unité d'affichage vidéo pour un système fibre à l'écran de divertissement à bord
US8416698B2 (en) 2009-08-20 2013-04-09 Lumexis Corporation Serial networking fiber optic inflight entertainment system network configuration
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication

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FR2609560B1 (fr) 1987-01-09 1990-11-23 Thomson Csf Films de langmuir-blodgett utilisables en optique non lineaire
FR2618221B1 (fr) 1987-07-17 1991-07-19 Thomson Csf Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.
FR2618278B1 (fr) 1987-07-17 1989-12-01 Thomson Csf Correlateur a fibre optique.
FR2619936B1 (fr) 1987-09-01 1989-12-01 Thomson Csf Modulateur pour onde electromagnetique, a puits quantiques, et utilisation de ce modulateur comme polariseur
FR2619938B1 (fr) 1987-09-01 1989-12-01 Thomson Csf Translateur de frequence pour onde du domaine infrarouge moyen
FR2622706B1 (fr) 1987-11-03 1992-01-17 Thomson Csf Dispositif d'interconnexion optique dynamique pour circuits integres
FR2640438B1 (fr) 1988-12-09 1991-01-25 Thomson Csf Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
FR2647973B1 (fr) 1989-05-30 1991-08-16 Thomson Csf Lasers de puissance pompes par diodes lasers
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FR2649833A1 (fr) 1989-07-11 1991-01-18 Thomson Csf Source laser de puissance accordable
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FR2655486B1 (fr) 1989-12-01 1994-08-26 Thomson Csf Dispositif laser a longueur d'onde elevee.
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FR2667207B1 (fr) 1990-09-21 1993-06-25 Thomson Csf Convertisseur de frequences lumineuses.
FR2671237B1 (fr) 1990-12-28 1995-03-31 Thomson Csf Laser solide de grande energie.
FR2679050B1 (fr) 1991-07-09 1994-08-26 Thomson Csf Dispositifs d'optique non lineaire.
FR2681737A1 (fr) 1991-09-24 1993-03-26 Thomson Csf Source monofrequence de puissance a fibre optique.
FR2681738B1 (fr) 1991-09-24 1993-11-05 Thomson Csf Lasers de puissance a filtre semiconducteur.
FR2686431A1 (fr) 1992-01-21 1993-07-23 Thomson Csf Doubleur de frequence optique utilisant des structures quantiques semiconductrices.
FR2715776B1 (fr) 1994-01-28 1996-03-01 Thomson Csf Semiconducteurs Laser de grande puissance à deux étages.
FR2739732B1 (fr) 1995-10-06 1997-10-31 Thomson Csf Dispositif d'amplification optique
FR2749721B1 (fr) 1996-06-07 1998-11-27 Thomson Csf Commutateur electrique a photoconducteur
US5770871A (en) * 1996-06-20 1998-06-23 Xerox Corporation Sensor array with anticoupling layer between data lines and charge collection electrodes
US6323490B1 (en) * 1998-03-20 2001-11-27 Kabushiki Kaisha Toshiba X-ray semiconductor detector
JP3447947B2 (ja) * 1998-03-20 2003-09-16 株式会社東芝 Ｘ線撮像装置
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
JP3916823B2 (ja) * 1999-04-07 2007-05-23 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ
FR2796211B1 (fr) 1999-07-09 2001-10-12 Thomson Csf Cavite optique instable pour faisceau laser
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice

Also Published As

Publication number Publication date
EP1332519A2 (fr) 2003-08-06
FR2814281B1 (fr) 2003-08-29
WO2002025699A3 (fr) 2002-05-16
FR2814281A1 (fr) 2002-03-22
DE60121785D1 (de) 2006-09-07
DE60121785T2 (de) 2007-10-18
US6815716B2 (en) 2004-11-09
EP1332519B1 (fr) 2006-07-26
US20040036092A1 (en) 2004-02-26
JP2004510328A (ja) 2004-04-02
WO2002025699A2 (fr) 2002-03-28

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