AU2001282325A1 - System and method for delivering cooling gas from atmospheric pressure to a highvacuum through a rotating seal in a batch ion implanter - Google Patents

System and method for delivering cooling gas from atmospheric pressure to a highvacuum through a rotating seal in a batch ion implanter

Info

Publication number
AU2001282325A1
AU2001282325A1 AU2001282325A AU8232501A AU2001282325A1 AU 2001282325 A1 AU2001282325 A1 AU 2001282325A1 AU 2001282325 A AU2001282325 A AU 2001282325A AU 8232501 A AU8232501 A AU 8232501A AU 2001282325 A1 AU2001282325 A1 AU 2001282325A1
Authority
AU
Australia
Prior art keywords
highvacuum
atmospheric pressure
cooling gas
ion implanter
rotating seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282325A
Inventor
Given Not
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2001282325A1 publication Critical patent/AU2001282325A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sealing Using Fluids, Sealing Without Contact, And Removal Of Oil (AREA)
  • Physical Vapour Deposition (AREA)
AU2001282325A 2000-09-26 2001-08-23 System and method for delivering cooling gas from atmospheric pressure to a highvacuum through a rotating seal in a batch ion implanter Abandoned AU2001282325A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09670091 2000-09-26
US09/670,091 US6580082B1 (en) 2000-09-26 2000-09-26 System and method for delivering cooling gas from atmospheric pressure to a high vacuum through a rotating seal in a batch ion implanter
PCT/GB2001/003793 WO2002027753A2 (en) 2000-09-26 2001-08-23 System and method for delivering cooling gas from atmospheric pressure to a high vacuum through a rotating seal in a batch ion implanter

Publications (1)

Publication Number Publication Date
AU2001282325A1 true AU2001282325A1 (en) 2002-04-08

Family

ID=24688949

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282325A Abandoned AU2001282325A1 (en) 2000-09-26 2001-08-23 System and method for delivering cooling gas from atmospheric pressure to a highvacuum through a rotating seal in a batch ion implanter

Country Status (7)

Country Link
US (1) US6580082B1 (en)
EP (1) EP1320865A2 (en)
JP (1) JP2004510305A (en)
KR (1) KR20030038741A (en)
AU (1) AU2001282325A1 (en)
TW (1) TW512392B (en)
WO (1) WO2002027753A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859019B2 (en) 2001-08-30 2005-02-22 Honeywell International, Inc. System and method for coupling rectifiers of an exciter to the rotor of a main generator
US6794664B1 (en) * 2003-12-04 2004-09-21 Axcelis Technologies, Inc. Umbilical cord facilities connection for an ion beam implanter
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
CN100358098C (en) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 Semiconductor arts piece processing device
KR100687435B1 (en) * 2005-10-05 2007-02-26 동부일렉트로닉스 주식회사 Ion implant method of semiconductor device
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US7559557B2 (en) * 2007-08-22 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Sealing between vacuum chambers
US20100084117A1 (en) * 2008-10-02 2010-04-08 Fish Roger B Platen cooling mechanism for cryogenic ion implanting
JP6108674B2 (en) * 2012-03-16 2017-04-05 株式会社日立ハイテクサイエンス Charged particle beam apparatus and sample transport apparatus
US12002649B2 (en) 2021-12-10 2024-06-04 Applied Materials, Inc. Spinning disk with electrostatic clamped platens for ion implantation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
JPS5950275A (en) * 1982-09-16 1984-03-23 Rigaku Keisoku Kk Shaft sealing apparatus utilizing magnetic fluid
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4535834A (en) * 1984-05-02 1985-08-20 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4733091A (en) 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
DE3588132T2 (en) * 1984-09-19 1997-04-03 Applied Materials Inc Device for scanning wafers
US4899059A (en) 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4965862A (en) 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
JPH0528951A (en) * 1991-07-18 1993-02-05 Tel Varian Ltd Ion implanter
US5641969A (en) 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5954342A (en) * 1997-04-25 1999-09-21 Mfs Technology Ltd Magnetic fluid seal apparatus for a rotary shaft
US6222196B1 (en) 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6412289B1 (en) * 2001-05-15 2002-07-02 General Electric Company Synchronous machine having cryogenic gas transfer coupling to rotor with super-conducting coils

Also Published As

Publication number Publication date
EP1320865A2 (en) 2003-06-25
US6580082B1 (en) 2003-06-17
WO2002027753A2 (en) 2002-04-04
KR20030038741A (en) 2003-05-16
WO2002027753A3 (en) 2002-05-30
TW512392B (en) 2002-12-01
JP2004510305A (en) 2004-04-02

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