AU2001280952A1 - Word line decoding architecture in a flash memory - Google Patents

Word line decoding architecture in a flash memory

Info

Publication number
AU2001280952A1
AU2001280952A1 AU2001280952A AU8095201A AU2001280952A1 AU 2001280952 A1 AU2001280952 A1 AU 2001280952A1 AU 2001280952 A AU2001280952 A AU 2001280952A AU 8095201 A AU8095201 A AU 8095201A AU 2001280952 A1 AU2001280952 A1 AU 2001280952A1
Authority
AU
Australia
Prior art keywords
flash memory
word line
line decoding
decoding architecture
architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001280952A
Inventor
Takao Akaogi
Ali Al-Shamma
Lee Cleveland
Yong Kim
Jin-Lien Lin
Kendra Nguyen
Boon Tang Teh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Advanced Micro Devices Inc
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Publication of AU2001280952A1 publication Critical patent/AU2001280952A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
AU2001280952A 2000-08-31 2001-07-31 Word line decoding architecture in a flash memory Abandoned AU2001280952A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22922100P 2000-08-31 2000-08-31
US60/229,221 2000-08-31
US09/690,554 US6347052B1 (en) 2000-08-31 2000-10-17 Word line decoding architecture in a flash memory
US09/690,554 2000-10-17
PCT/US2001/024109 WO2002019335A2 (en) 2000-08-31 2001-07-31 Word line decoding architecture in a flash memory

Publications (1)

Publication Number Publication Date
AU2001280952A1 true AU2001280952A1 (en) 2002-03-13

Family

ID=26923081

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001280952A Abandoned AU2001280952A1 (en) 2000-08-31 2001-07-31 Word line decoding architecture in a flash memory

Country Status (9)

Country Link
US (1) US6347052B1 (en)
EP (1) EP1344221B1 (en)
JP (2) JP4916084B2 (en)
KR (1) KR100784473B1 (en)
CN (1) CN1305073C (en)
AU (1) AU2001280952A1 (en)
DE (1) DE60136482D1 (en)
TW (1) TW541544B (en)
WO (1) WO2002019335A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
KR100474200B1 (en) * 2002-07-18 2005-03-10 주식회사 하이닉스반도체 Row decorder of flash memory and erasing method of flash memory cell using the same
JP4469649B2 (en) 2003-09-17 2010-05-26 株式会社ルネサステクノロジ Semiconductor flash memory
US8189396B2 (en) * 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
US7558116B2 (en) * 2007-08-13 2009-07-07 Spansion Llc Regulation of boost-strap node ramp rate using capacitance to counter parasitic elements in channel
KR101143472B1 (en) * 2010-07-28 2012-05-08 에스케이하이닉스 주식회사 Semiconductor apparatus and method of transferring control voltage
CN103177754B (en) * 2011-12-21 2016-08-17 上海华虹宏力半导体制造有限公司 A kind of address decoding circuitry of bin
CN104217751A (en) * 2013-06-03 2014-12-17 辉达公司 Memory
CN103811065B (en) * 2014-03-07 2017-12-08 上海华虹宏力半导体制造有限公司 Nonvolatile memory system
TWI533324B (en) * 2014-05-19 2016-05-11 補丁科技股份有限公司 Memory architecture
JP2017147005A (en) * 2016-02-16 2017-08-24 ルネサスエレクトロニクス株式会社 Flash memory
CN105810247B (en) * 2016-04-19 2022-11-18 兆易创新科技集团股份有限公司 Word line driving circuit
CN111785308B (en) * 2020-06-10 2021-09-10 芯天下技术股份有限公司 Method, system, storage medium and terminal for reducing area of non-flash memory programming pump

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950004853B1 (en) 1991-08-14 1995-05-15 삼성전자 주식회사 Semiconductor memory device with function of block selection for low power consumption
JP2967021B2 (en) * 1993-01-25 1999-10-25 株式会社東芝 Semiconductor memory device
KR0164377B1 (en) * 1995-07-15 1999-02-18 김광호 Sub-word line driver
JP3542675B2 (en) * 1995-07-24 2004-07-14 株式会社ルネサステクノロジ Semiconductor storage device
KR0170903B1 (en) * 1995-12-08 1999-03-30 김주용 Sub word line driving circuit and semiconductor memory device using it
US6011746A (en) * 1997-02-06 2000-01-04 Hyundai Electronics America, Inc. Word line driver for semiconductor memories
US5875149A (en) * 1997-02-06 1999-02-23 Hyndai Electronics America Word line driver for semiconductor memories
JP3408724B2 (en) * 1997-08-15 2003-05-19 株式会社日立製作所 Semiconductor storage device
JP3227698B2 (en) * 1998-03-16 2001-11-12 日本電気株式会社 Nonvolatile semiconductor memory device
JP2000268590A (en) * 1999-03-18 2000-09-29 Toshiba Corp Semiconductor memory

Also Published As

Publication number Publication date
JP5059199B2 (en) 2012-10-24
US6347052B1 (en) 2002-02-12
CN1305073C (en) 2007-03-14
WO2002019335A2 (en) 2002-03-07
WO2002019335A3 (en) 2002-09-06
JP2011103175A (en) 2011-05-26
KR100784473B1 (en) 2007-12-11
KR20030043944A (en) 2003-06-02
EP1344221A2 (en) 2003-09-17
JP4916084B2 (en) 2012-04-11
EP1344221B1 (en) 2008-11-05
DE60136482D1 (en) 2008-12-18
CN1449567A (en) 2003-10-15
TW541544B (en) 2003-07-11
JP2004508652A (en) 2004-03-18

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