AU2001251169A1 - Synchronous flash memory with concurrent write and read operation - Google Patents

Synchronous flash memory with concurrent write and read operation

Info

Publication number
AU2001251169A1
AU2001251169A1 AU2001251169A AU5116901A AU2001251169A1 AU 2001251169 A1 AU2001251169 A1 AU 2001251169A1 AU 2001251169 A AU2001251169 A AU 2001251169A AU 5116901 A AU5116901 A AU 5116901A AU 2001251169 A1 AU2001251169 A1 AU 2001251169A1
Authority
AU
Australia
Prior art keywords
flash memory
read operation
synchronous flash
concurrent write
concurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001251169A
Inventor
Frankie F. Roohparvar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/628,184 external-priority patent/US6851026B1/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001251169A1 publication Critical patent/AU2001251169A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2281—Timing of a read operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/229—Timing of a write operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
AU2001251169A 2000-03-30 2001-03-30 Synchronous flash memory with concurrent write and read operation Abandoned AU2001251169A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US19350600P 2000-03-30 2000-03-30
US60193506 2000-03-30
US09/628,184 US6851026B1 (en) 2000-07-28 2000-07-28 Synchronous flash memory with concurrent write and read operation
US09628184 2000-07-28
PCT/US2001/010375 WO2001075892A2 (en) 2000-03-30 2001-03-30 Synchronous flash memory with concurrent write and read operation

Publications (1)

Publication Number Publication Date
AU2001251169A1 true AU2001251169A1 (en) 2001-10-15

Family

ID=26889068

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001251169A Abandoned AU2001251169A1 (en) 2000-03-30 2001-03-30 Synchronous flash memory with concurrent write and read operation

Country Status (5)

Country Link
JP (1) JP3779209B2 (en)
KR (1) KR100438634B1 (en)
AU (1) AU2001251169A1 (en)
DE (1) DE10196002B3 (en)
WO (1) WO2001075892A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4472701B2 (en) 2004-07-29 2010-06-02 スパンション エルエルシー Nonvolatile storage device information setting method, nonvolatile storage device, and system equipped with the same
JPWO2007023544A1 (en) * 2005-08-25 2009-03-26 スパンション エルエルシー Storage device, storage device control method, and storage control device control method
JP2007164938A (en) 2005-12-16 2007-06-28 Matsushita Electric Ind Co Ltd Semiconductor memory apparatus
US7639540B2 (en) * 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
KR101293226B1 (en) 2011-06-30 2013-08-05 (주)아토솔루션 Nonvolatile memory device, electronic control system, and method of operating the nonvolatile memory device
US11269779B2 (en) * 2020-05-27 2022-03-08 Microsoft Technology Licensing, Llc Memory system with a predictable read latency from media with a long write latency
DE102021107044A1 (en) 2021-03-10 2022-09-15 Elmos Semiconductor Se Safety-relevant computer system with a data memory and a data memory
CN113343319B (en) * 2021-06-29 2024-04-02 珠海一微半导体股份有限公司 FLASH type identification method and type identification system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
JP3435783B2 (en) * 1994-03-17 2003-08-11 株式会社日立製作所 Storage element including a plurality of sets of data buffers and data processing system using the storage element
US5666322A (en) * 1995-09-21 1997-09-09 Nec Electronics, Inc. Phase-locked loop timing controller in an integrated circuit memory
JP3570879B2 (en) * 1997-07-09 2004-09-29 富士通株式会社 Nonvolatile semiconductor memory device
JP3386705B2 (en) * 1997-12-25 2003-03-17 株式会社東芝 Semiconductor memory device and burst address counter thereof

Also Published As

Publication number Publication date
DE10196002T1 (en) 2003-03-13
WO2001075892A2 (en) 2001-10-11
KR20020086746A (en) 2002-11-18
KR100438634B1 (en) 2004-07-02
JP3779209B2 (en) 2006-05-24
WO2001075892A3 (en) 2002-05-23
JP2003529880A (en) 2003-10-07
DE10196002B3 (en) 2012-11-08

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