AU2001276980A1 - Semiconductor structure including a magnetic tunnel junction - Google Patents
Semiconductor structure including a magnetic tunnel junctionInfo
- Publication number
- AU2001276980A1 AU2001276980A1 AU2001276980A AU7698001A AU2001276980A1 AU 2001276980 A1 AU2001276980 A1 AU 2001276980A1 AU 2001276980 A AU2001276980 A AU 2001276980A AU 7698001 A AU7698001 A AU 7698001A AU 2001276980 A1 AU2001276980 A1 AU 2001276980A1
- Authority
- AU
- Australia
- Prior art keywords
- structure including
- semiconductor structure
- tunnel junction
- magnetic tunnel
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62452600A | 2000-07-24 | 2000-07-24 | |
US09624526 | 2000-07-24 | ||
US09/624,526 | 2000-07-24 | ||
PCT/US2001/022659 WO2002009158A2 (fr) | 2000-07-24 | 2001-07-18 | Structure semi-conductrice comportant une jonction a effet tunnel magnetique |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001276980A1 true AU2001276980A1 (en) | 2002-02-05 |
Family
ID=24502329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001276980A Abandoned AU2001276980A1 (en) | 2000-07-24 | 2001-07-18 | Semiconductor structure including a magnetic tunnel junction |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001276980A1 (fr) |
TW (1) | TW503460B (fr) |
WO (1) | WO2002009158A2 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
EP1340269B1 (fr) * | 2000-11-30 | 2009-02-25 | Asm International N.V. | Films minces pour dispositifs magnetiques |
US6759081B2 (en) | 2001-05-11 | 2004-07-06 | Asm International, N.V. | Method of depositing thin films for magnetic heads |
US7037574B2 (en) | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
US7666773B2 (en) | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
US8025922B2 (en) | 2005-03-15 | 2011-09-27 | Asm International N.V. | Enhanced deposition of noble metals |
US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
CN111816760B (zh) * | 2019-04-11 | 2023-07-14 | 上海磁宇信息科技有限公司 | 一种磁性随机存储器磁性存储单元及其形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
WO2001033585A1 (fr) * | 1999-11-05 | 2001-05-10 | Oxxel Oxide Electronics Technology, Inc. | Synthese et systeme d'essai de magnetoresistance utilisant des echantillons de double perovskite pour preparer un dispositif a magnetoresistance |
-
2001
- 2001-07-18 WO PCT/US2001/022659 patent/WO2002009158A2/fr active Application Filing
- 2001-07-18 AU AU2001276980A patent/AU2001276980A1/en not_active Abandoned
- 2001-07-23 TW TW090117916A patent/TW503460B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002009158A2 (fr) | 2002-01-31 |
TW503460B (en) | 2002-09-21 |
WO2002009158A3 (fr) | 2002-07-18 |
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