AU2001276805A1 - Injection laser - Google Patents

Injection laser

Info

Publication number
AU2001276805A1
AU2001276805A1 AU2001276805A AU7680501A AU2001276805A1 AU 2001276805 A1 AU2001276805 A1 AU 2001276805A1 AU 2001276805 A AU2001276805 A AU 2001276805A AU 7680501 A AU7680501 A AU 7680501A AU 2001276805 A1 AU2001276805 A1 AU 2001276805A1
Authority
AU
Australia
Prior art keywords
injection laser
laser
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276805A
Other languages
English (en)
Inventor
Aleksander Aleksandrovich Chelnyy
Petr Georgievich Eliseev
Marina Shalvovna Kobiakova
Vladimir Aleksandrovich Simakov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Nauchno -Issledovatelsky Institut "polyus"
Original Assignee
Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod filed Critical Federalnoe Gosudarstvennoe Unitarnoe Predpriyatie Izhevsky Mekhanichesky Zavod
Publication of AU2001276805A1 publication Critical patent/AU2001276805A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
AU2001276805A 2000-08-30 2001-07-16 Injection laser Abandoned AU2001276805A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU2000122574 2000-08-30
RU2000122574A RU2168249C1 (ru) 2000-08-30 2000-08-30 Инжекционный лазер
PCT/RU2001/000290 WO2002019479A2 (fr) 2000-08-30 2001-07-16 Laser a injection

Publications (1)

Publication Number Publication Date
AU2001276805A1 true AU2001276805A1 (en) 2002-03-13

Family

ID=20239599

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276805A Abandoned AU2001276805A1 (en) 2000-08-30 2001-07-16 Injection laser

Country Status (3)

Country Link
AU (1) AU2001276805A1 (ru)
RU (1) RU2168249C1 (ru)
WO (1) WO2002019479A2 (ru)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2539117C1 (ru) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Полупроводниковый усилитель оптического излучения
RU184264U1 (ru) * 2018-05-04 2018-10-19 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Инжекционный лазер с переключаемым спектром генерации

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706253A (en) * 1985-05-15 1987-11-10 Gte Laboratories Incorporated High speed InGaAsP lasers by gain enhancement doping
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
JP3481458B2 (ja) * 1998-05-14 2003-12-22 アンリツ株式会社 半導体レーザ

Also Published As

Publication number Publication date
RU2168249C1 (ru) 2001-05-27
WO2002019479A3 (fr) 2003-02-13
WO2002019479A2 (fr) 2002-03-07

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