AU2001247304A1 - Composition and process for production of copper circuitry in microelectronic device structures - Google Patents

Composition and process for production of copper circuitry in microelectronic device structures

Info

Publication number
AU2001247304A1
AU2001247304A1 AU2001247304A AU4730401A AU2001247304A1 AU 2001247304 A1 AU2001247304 A1 AU 2001247304A1 AU 2001247304 A AU2001247304 A AU 2001247304A AU 4730401 A AU4730401 A AU 4730401A AU 2001247304 A1 AU2001247304 A1 AU 2001247304A1
Authority
AU
Australia
Prior art keywords
composition
production
microelectronic device
device structures
copper circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247304A
Inventor
Thomas H. Baum
Chong-Ying Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001247304A1 publication Critical patent/AU2001247304A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2001247304A 2000-03-09 2001-03-07 Composition and process for production of copper circuitry in microelectronic device structures Abandoned AU2001247304A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/522,102 US6589329B1 (en) 2000-03-09 2000-03-09 Composition and process for production of copper circuitry in microelectronic device structures
US09522102 2000-03-09
PCT/US2001/007232 WO2001066347A1 (en) 2000-03-09 2001-03-07 Composition and process for production of copper circuitry in microelectronic device structures

Publications (1)

Publication Number Publication Date
AU2001247304A1 true AU2001247304A1 (en) 2001-09-17

Family

ID=24079474

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247304A Abandoned AU2001247304A1 (en) 2000-03-09 2001-03-07 Composition and process for production of copper circuitry in microelectronic device structures

Country Status (3)

Country Link
US (1) US6589329B1 (en)
AU (1) AU2001247304A1 (en)
WO (1) WO2001066347A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003272656A1 (en) * 2002-09-27 2004-04-19 Tokyo Electron Limited A method and system for etching high-k dielectric materials
JP4954448B2 (en) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Organometallic compounds
JP4529434B2 (en) * 2003-12-11 2010-08-25 東ソー株式会社 Copper complex and copper complex composition comprising a polysubstituted vinylsilane compound
FR2868085B1 (en) * 2004-03-24 2006-07-14 Alchimer Sa METHOD FOR SELECTIVE COATING OF COMPOSITE SURFACE, FABRICATION OF MICROELECTRONIC INTERCONNECTIONS USING THE SAME, AND INTEGRATED CIRCUITS
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
WO2006055868A1 (en) * 2004-11-21 2006-05-26 David Mitchell Windmiller Bottom fillable bottles and systems for charging
US7205422B2 (en) 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7956465B2 (en) * 2006-05-08 2011-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures of integrated circuits
US7919862B2 (en) * 2006-05-08 2011-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures of integrated circuits
US7612451B2 (en) * 2006-07-13 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing resistivity in interconnect structures by forming an inter-layer
US20110060165A1 (en) * 2006-12-05 2011-03-10 Advanced Technology Materials, Inc. Metal aminotroponiminates, bis-oxazolinates and guanidinates
US8242016B2 (en) * 2007-05-14 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Approach for reducing copper line resistivity
US8263795B2 (en) 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US3356527A (en) 1964-04-23 1967-12-05 Ross W Moshier Vapor-plating metals from fluorocarbon keto metal compounds
US3594216A (en) 1969-06-19 1971-07-20 Westinghouse Electric Corp Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate
US5094701A (en) 1990-03-30 1992-03-10 Air Products And Chemicals, Inc. Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same
US5820664A (en) 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5453494A (en) 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5711816A (en) 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5204314A (en) 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5280012A (en) 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5225561A (en) 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5096737A (en) * 1990-10-24 1992-03-17 International Business Machines Corporation Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
US5220044A (en) 1990-10-24 1993-06-15 International Business Machines Corporation Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
US5098516A (en) 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
US5085731A (en) 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5187300A (en) 1991-02-04 1993-02-16 Air Products And Chemicals, Inc. Volatile precursors for copper CVD
US5144049A (en) 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5280664A (en) 1992-03-20 1994-01-25 Lin Mary D Disposable household cleaning devices
US5358743A (en) 1992-11-24 1994-10-25 University Of New Mexico Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification
US5322712A (en) 1993-05-18 1994-06-21 Air Products And Chemicals, Inc. Process for improved quality of CVD copper films
US5919522A (en) 1995-03-31 1999-07-06 Advanced Technology Materials, Inc. Growth of BaSrTiO3 using polyamine-based precursors
US5744192A (en) 1996-11-08 1998-04-28 Sharp Microelectronics Technology, Inc. Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS
US6090960A (en) 1997-01-07 2000-07-18 Sharp Laboratories Of America, Inc. Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same
US5994571A (en) 1998-11-10 1999-11-30 Sharp Laboratories Of America, Inc. Substituted ethylene precursor and synthesis method
US6337148B1 (en) * 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures

Also Published As

Publication number Publication date
US6589329B1 (en) 2003-07-08
WO2001066347A1 (en) 2001-09-13

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