AU2001245596A1 - Method and system for providing a continuous motion sequential lateral solidification - Google Patents

Method and system for providing a continuous motion sequential lateral solidification

Info

Publication number
AU2001245596A1
AU2001245596A1 AU2001245596A AU4559601A AU2001245596A1 AU 2001245596 A1 AU2001245596 A1 AU 2001245596A1 AU 2001245596 A AU2001245596 A AU 2001245596A AU 4559601 A AU4559601 A AU 4559601A AU 2001245596 A1 AU2001245596 A1 AU 2001245596A1
Authority
AU
Australia
Prior art keywords
providing
continuous motion
sequential lateral
lateral solidification
motion sequential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001245596A
Inventor
James S. Im
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University of New York
Original Assignee
Columbia University of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University of New York filed Critical Columbia University of New York
Publication of AU2001245596A1 publication Critical patent/AU2001245596A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
AU2001245596A 2000-03-16 2001-03-12 Method and system for providing a continuous motion sequential lateral solidification Abandoned AU2001245596A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/526,585 US6368945B1 (en) 2000-03-16 2000-03-16 Method and system for providing a continuous motion sequential lateral solidification
US09526585 2000-03-16
PCT/US2001/007724 WO2001071786A1 (en) 2000-03-16 2001-03-12 Method and system for providing a continuous motion sequential lateral solidification

Publications (1)

Publication Number Publication Date
AU2001245596A1 true AU2001245596A1 (en) 2001-10-03

Family

ID=24097932

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001245596A Abandoned AU2001245596A1 (en) 2000-03-16 2001-03-12 Method and system for providing a continuous motion sequential lateral solidification

Country Status (10)

Country Link
US (2) US6368945B1 (en)
EP (1) EP1181715A1 (en)
JP (1) JP5000062B2 (en)
KR (1) KR100684282B1 (en)
CN (2) CN1364310A (en)
AU (1) AU2001245596A1 (en)
CA (1) CA2374057A1 (en)
MX (1) MXPA01011751A (en)
TW (1) TW514986B (en)
WO (1) WO2001071786A1 (en)

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US6368945B1 (en) 2002-04-09
WO2001071786A1 (en) 2001-09-27
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KR100684282B1 (en) 2007-02-16
KR20020027315A (en) 2002-04-13
US6563077B2 (en) 2003-05-13
MXPA01011751A (en) 2002-04-24
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CN1364310A (en) 2002-08-14
CN1641836B (en) 2010-04-28
TW514986B (en) 2002-12-21

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