GB2429843B - Semiconductor structure processing using multiple laser beam spots - Google Patents

Semiconductor structure processing using multiple laser beam spots

Info

Publication number
GB2429843B
GB2429843B GB0623283A GB0623283A GB2429843B GB 2429843 B GB2429843 B GB 2429843B GB 0623283 A GB0623283 A GB 0623283A GB 0623283 A GB0623283 A GB 0623283A GB 2429843 B GB2429843 B GB 2429843B
Authority
GB
United Kingdom
Prior art keywords
laser beam
semiconductor structure
multiple laser
beam spots
structure processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0623283A
Other versions
GB0623283D0 (en
GB2429843A (en
Inventor
Kelly J Bruland
Ho Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US58091704P priority Critical
Priority to US11/051,500 priority patent/US8148211B2/en
Priority to US11/052,000 priority patent/US7923306B2/en
Priority to US11/051,261 priority patent/US7633034B2/en
Priority to US11/052,014 priority patent/US7629234B2/en
Priority to US11/051,265 priority patent/US7435927B2/en
Priority to US11/051,262 priority patent/US7687740B2/en
Priority to US11/051,263 priority patent/US7935941B2/en
Priority to US11/051,958 priority patent/US7425471B2/en
Priority to PCT/US2005/021406 priority patent/WO2006009818A2/en
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Publication of GB0623283D0 publication Critical patent/GB0623283D0/en
Publication of GB2429843A publication Critical patent/GB2429843A/en
Application granted granted Critical
Publication of GB2429843B publication Critical patent/GB2429843B/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067Dividing the beam into multiple beams, e.g. multifocusing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB0623283A 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots Active GB2429843B (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US58091704P true 2004-06-18 2004-06-18
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
PCT/US2005/021406 WO2006009818A2 (en) 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots

Publications (3)

Publication Number Publication Date
GB0623283D0 GB0623283D0 (en) 2007-01-03
GB2429843A GB2429843A (en) 2007-03-07
GB2429843B true GB2429843B (en) 2009-07-08

Family

ID=35785685

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0623283A Active GB2429843B (en) 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots

Country Status (5)

Country Link
JP (1) JP5294629B2 (en)
KR (1) KR101257029B1 (en)
DE (1) DE112005001418T5 (en)
GB (1) GB2429843B (en)
WO (1) WO2006009818A2 (en)

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US8084706B2 (en) * 2006-07-20 2011-12-27 Gsi Group Corporation System and method for laser processing at non-constant velocities
US8278595B2 (en) * 2007-03-16 2012-10-02 Electro Scientific Industries, Inc. Use of predictive pulse triggering to improve accuracy in link processing
DE102007032903A1 (en) * 2007-07-14 2009-01-15 Schepers Gmbh + Co. Kg Method for operating a laser engraving device
KR101310243B1 (en) * 2007-09-19 2013-09-24 지에스아이 그룹 코포레이션 Link processing with high speed beam deflection
EP2393627B1 (en) 2009-02-03 2018-05-09 Abbott Cardiovascular Systems Inc. Multiple beam laser system for forming stents
JP2011092956A (en) * 2009-10-27 2011-05-12 Fujifilm Corp Optical head device, and laser beam machining method using the optical head device
US8461479B2 (en) * 2009-12-23 2013-06-11 Electro Scientific Industries, Inc. Adaptive processing constraints for memory repair
JP5901265B2 (en) * 2011-11-10 2016-04-06 東芝機械株式会社 Pulse laser processing apparatus and pulse laser processing method
US9678350B2 (en) 2012-03-20 2017-06-13 Kla-Tencor Corporation Laser with integrated multi line or scanning beam capability
JP6022223B2 (en) * 2012-06-14 2016-11-09 株式会社ディスコ Laser processing equipment
US20170008126A1 (en) * 2014-02-06 2017-01-12 United Technologies Corporation An additive manufacturing system with a multi-energy beam gun and method of operation
JP6218770B2 (en) * 2014-06-23 2017-10-25 三菱電機株式会社 Laser processing equipment
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
KR101612508B1 (en) * 2015-02-03 2016-04-14 동서대학교산학협력단 Probing system with dual mode laser for fault injection attacks
KR101987192B1 (en) * 2017-06-14 2019-09-30 주식회사 이오테크닉스 Wafer cutting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6567219B1 (en) * 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus

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JPH02137682A (en) * 1988-11-16 1990-05-25 Nec Kyushu Ltd Laser repair device for semiconductor integrated circuit
TW279229B (en) * 1994-12-29 1996-06-21 Siemens Ag Double density fuse bank for the laser break-link programming of an integrated-circuit
JP3353520B2 (en) * 1995-02-27 2002-12-03 ソニー株式会社 Semiconductor device
JPH10328873A (en) * 1997-06-04 1998-12-15 Nikon Corp Laser beam machining device
JPH11245073A (en) * 1998-03-04 1999-09-14 Nikon Corp Laser processing device
JP5033296B2 (en) * 2000-07-12 2012-09-26 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド UV laser system and method for single pulse for IC fuse cutting
JP3935775B2 (en) * 2002-05-21 2007-06-27 日立ビアメカニクス株式会社 Laser processing equipment
JP4014498B2 (en) * 2002-12-17 2007-11-28 日立ビアメカニクス株式会社 Multi-axis laser processing machine

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6567219B1 (en) * 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Also Published As

Publication number Publication date
WO2006009818A3 (en) 2007-03-01
GB2429843A (en) 2007-03-07
GB0623283D0 (en) 2007-01-03
KR101257029B1 (en) 2013-04-22
JP5294629B2 (en) 2013-09-18
WO2006009818A2 (en) 2006-01-26
DE112005001418T5 (en) 2008-02-21
KR20070036747A (en) 2007-04-03
JP2008503877A (en) 2008-02-07

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