GB2429843A - Semiconductor structure processing using multiple laser beam spots - Google Patents

Semiconductor structure processing using multiple laser beam spots Download PDF

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Publication number
GB2429843A
GB2429843A GB0623283A GB0623283A GB2429843A GB 2429843 A GB2429843 A GB 2429843A GB 0623283 A GB0623283 A GB 0623283A GB 0623283 A GB0623283 A GB 0623283A GB 2429843 A GB2429843 A GB 2429843A
Authority
GB
United Kingdom
Prior art keywords
links
rows
lengthwise direction
multiple laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0623283A
Other versions
GB2429843B (en
GB0623283D0 (en
Inventor
Kelly J Bruland
Ho Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/051,262 external-priority patent/US7687740B2/en
Priority claimed from US11/052,014 external-priority patent/US7629234B2/en
Priority claimed from US11/051,265 external-priority patent/US7435927B2/en
Priority claimed from US11/051,500 external-priority patent/US8148211B2/en
Priority claimed from US11/051,263 external-priority patent/US7935941B2/en
Priority claimed from US11/051,958 external-priority patent/US7425471B2/en
Priority claimed from US11/051,261 external-priority patent/US7633034B2/en
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Publication of GB0623283D0 publication Critical patent/GB0623283D0/en
Publication of GB2429843A publication Critical patent/GB2429843A/en
Application granted granted Critical
Publication of GB2429843B publication Critical patent/GB2429843B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N / 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.

Description

GB 2429843 A continuation (72) Inventor(s): Kelly J Bruland Ho Wai Lo
Brian W Baird Frank G Evans Richard S Harris Yunlong Sun Stephen N Swaringen (74) Agent and/or Address for Service: Hanna Moore & Curley 13 Lower Lad Lane, Dublin 2, Ireland
GB0623283A 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots Active GB2429843B (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US58091704P 2004-06-18 2004-06-18
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
PCT/US2005/021406 WO2006009818A2 (en) 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots

Publications (3)

Publication Number Publication Date
GB0623283D0 GB0623283D0 (en) 2007-01-03
GB2429843A true GB2429843A (en) 2007-03-07
GB2429843B GB2429843B (en) 2009-07-08

Family

ID=35785685

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0623283A Active GB2429843B (en) 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots

Country Status (5)

Country Link
JP (1) JP5294629B2 (en)
KR (1) KR101257029B1 (en)
DE (1) DE112005001418T5 (en)
GB (1) GB2429843B (en)
WO (1) WO2006009818A2 (en)

Cited By (1)

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US9678350B2 (en) 2012-03-20 2017-06-13 Kla-Tencor Corporation Laser with integrated multi line or scanning beam capability

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US8278595B2 (en) * 2007-03-16 2012-10-02 Electro Scientific Industries, Inc. Use of predictive pulse triggering to improve accuracy in link processing
DE102007032903A1 (en) * 2007-07-14 2009-01-15 Schepers Gmbh + Co. Kg Method for operating a laser engraving device
KR101420703B1 (en) * 2007-09-19 2014-07-23 지에스아이 그룹 코포레이션 Link processing with high speed beam deflection
WO2010091100A1 (en) 2009-02-03 2010-08-12 Abbott Cardiovascular Systems Inc. Multiple beam laser system for forming stents
JP2011092956A (en) * 2009-10-27 2011-05-12 Fujifilm Corp Optical head device, and laser beam machining method using the optical head device
US8461479B2 (en) * 2009-12-23 2013-06-11 Electro Scientific Industries, Inc. Adaptive processing constraints for memory repair
JP5901265B2 (en) * 2011-11-10 2016-04-06 東芝機械株式会社 Pulse laser processing apparatus and pulse laser processing method
JP6022223B2 (en) * 2012-06-14 2016-11-09 株式会社ディスコ Laser processing equipment
JP5940906B2 (en) * 2012-06-19 2016-06-29 株式会社ディスコ Laser processing equipment
US20170008126A1 (en) * 2014-02-06 2017-01-12 United Technologies Corporation An additive manufacturing system with a multi-energy beam gun and method of operation
JP6218770B2 (en) * 2014-06-23 2017-10-25 三菱電機株式会社 Laser processing equipment
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
KR101612508B1 (en) * 2015-02-03 2016-04-14 동서대학교산학협력단 Probing system with dual mode laser for fault injection attacks
KR20240010086A (en) * 2015-09-09 2024-01-23 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Laser processing apparatus, methods of laser-processing workpieces and related arrangements
KR101987192B1 (en) * 2017-06-14 2019-09-30 주식회사 이오테크닉스 Wafer cutting device
US10615044B1 (en) * 2018-10-18 2020-04-07 Asm Technology Singapore Pte Ltd Material cutting using laser pulses
JP6843219B1 (en) * 2019-12-25 2021-03-17 浜松ホトニクス株式会社 Light source for laser processing and laser processing equipment
CN115335965A (en) * 2020-03-24 2022-11-11 东京毅力科创株式会社 Substrate processing method and substrate processing apparatus

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Publication number Priority date Publication date Assignee Title
US9678350B2 (en) 2012-03-20 2017-06-13 Kla-Tencor Corporation Laser with integrated multi line or scanning beam capability

Also Published As

Publication number Publication date
GB2429843B (en) 2009-07-08
DE112005001418T5 (en) 2008-02-21
JP2008503877A (en) 2008-02-07
WO2006009818A3 (en) 2007-03-01
GB0623283D0 (en) 2007-01-03
KR101257029B1 (en) 2013-04-22
WO2006009818A2 (en) 2006-01-26
JP5294629B2 (en) 2013-09-18
KR20070036747A (en) 2007-04-03

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