TW200603235A - Semiconductor structure processing using multiple laser beam spots - Google Patents

Semiconductor structure processing using multiple laser beam spots

Info

Publication number
TW200603235A
TW200603235A TW094120172A TW94120172A TW200603235A TW 200603235 A TW200603235 A TW 200603235A TW 094120172 A TW094120172 A TW 094120172A TW 94120172 A TW94120172 A TW 94120172A TW 200603235 A TW200603235 A TW 200603235A
Authority
TW
Taiwan
Prior art keywords
links
rows
lengthwise direction
multiple laser
laser beam
Prior art date
Application number
TW094120172A
Other languages
Chinese (zh)
Other versions
TWI366216B (en
Inventor
Kelly J Bruland
Ho-Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Original Assignee
Electro Scient Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/051,958 external-priority patent/US7425471B2/en
Priority claimed from US11/052,014 external-priority patent/US7629234B2/en
Priority claimed from US11/051,261 external-priority patent/US7633034B2/en
Priority claimed from US11/051,500 external-priority patent/US8148211B2/en
Priority claimed from US11/051,262 external-priority patent/US7687740B2/en
Priority claimed from US11/051,263 external-priority patent/US7935941B2/en
Priority claimed from US11/051,265 external-priority patent/US7435927B2/en
Application filed by Electro Scient Ind Inc filed Critical Electro Scient Ind Inc
Publication of TW200603235A publication Critical patent/TW200603235A/en
Application granted granted Critical
Publication of TWI366216B publication Critical patent/TWI366216B/en

Links

Abstract

Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N ≥ 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.
TW094120172A 2004-06-18 2005-06-17 Semiconductor structure processing using multiple laser beam spots TWI366216B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US58091704P 2004-06-18 2004-06-18
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset

Publications (2)

Publication Number Publication Date
TW200603235A true TW200603235A (en) 2006-01-16
TWI366216B TWI366216B (en) 2012-06-11

Family

ID=46675739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120172A TWI366216B (en) 2004-06-18 2005-06-17 Semiconductor structure processing using multiple laser beam spots

Country Status (2)

Country Link
JP (1) JP2012138597A (en)
TW (1) TWI366216B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447955B (en) * 2011-11-23 2014-08-01 Ind Tech Res Inst Light-emitting diode element, manufacturing method of light guide structure thereof and equipment of forming the same
US10290467B2 (en) 2014-03-10 2019-05-14 D2S, Inc. Method and system for forming a pattern on a surface using multi-beam charged particle beam lithography
US11264206B2 (en) 2014-03-10 2022-03-01 D2S, Inc. Methods and systems for forming a pattern on a surface using multi-beam charged particle beam lithography

Families Citing this family (4)

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CN111992545B (en) * 2020-08-28 2023-09-08 格力电器(武汉)有限公司 Cleaning device and cleaning method for lower circular seam oxide skin of water heater liner
CN115041814A (en) * 2021-02-26 2022-09-13 深圳市大族半导体装备科技有限公司 Laser processing device and method for brittle material
CN113843499A (en) * 2021-09-10 2021-12-28 深圳市海目星激光智能装备股份有限公司 Laser film opening method and device
CN115939011B (en) * 2023-03-09 2023-07-21 长鑫存储技术有限公司 Auxiliary calibration device, semiconductor conveying system and calibration method thereof

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JPH02137682A (en) * 1988-11-16 1990-05-25 Nec Kyushu Ltd Laser repair device for semiconductor integrated circuit
JP3299627B2 (en) * 1994-04-22 2002-07-08 ローム株式会社 Method for cutting fuse structure and apparatus for cutting fuse structure
TW279229B (en) * 1994-12-29 1996-06-21 Siemens Ag Double density fuse bank for the laser break-link programming of an integrated-circuit
JP3353520B2 (en) * 1995-02-27 2002-12-03 ソニー株式会社 Semiconductor device
JPH10328873A (en) * 1997-06-04 1998-12-15 Nikon Corp Laser beam machining device
JPH11245073A (en) * 1998-03-04 1999-09-14 Nikon Corp Laser processing device
CN1219319C (en) * 2000-07-12 2005-09-14 电子科学工业公司 UV laser system and method for single pulse servering of IC fuses
JP4202077B2 (en) * 2002-09-11 2008-12-24 パナソニック株式会社 Fuse cutting method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447955B (en) * 2011-11-23 2014-08-01 Ind Tech Res Inst Light-emitting diode element, manufacturing method of light guide structure thereof and equipment of forming the same
US8823032B2 (en) 2011-11-23 2014-09-02 Industrial Technology Research Institute Light-emitting diode element, method for manufacturing light guide structure thereof and equipment for forming the same
US10290467B2 (en) 2014-03-10 2019-05-14 D2S, Inc. Method and system for forming a pattern on a surface using multi-beam charged particle beam lithography
TWI661265B (en) * 2014-03-10 2019-06-01 美商D2S公司 Method for forming a pattern on a surface using multi-beam charged particle beam lithography
US11264206B2 (en) 2014-03-10 2022-03-01 D2S, Inc. Methods and systems for forming a pattern on a surface using multi-beam charged particle beam lithography

Also Published As

Publication number Publication date
TWI366216B (en) 2012-06-11
JP2012138597A (en) 2012-07-19

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