AU2001241449A1 - Lateral dmos improved breakdown structure and method - Google Patents
Lateral dmos improved breakdown structure and methodInfo
- Publication number
- AU2001241449A1 AU2001241449A1 AU2001241449A AU4144901A AU2001241449A1 AU 2001241449 A1 AU2001241449 A1 AU 2001241449A1 AU 2001241449 A AU2001241449 A AU 2001241449A AU 4144901 A AU4144901 A AU 4144901A AU 2001241449 A1 AU2001241449 A1 AU 2001241449A1
- Authority
- AU
- Australia
- Prior art keywords
- lateral dmos
- breakdown structure
- improved breakdown
- improved
- dmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000015556 catabolic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/506,711 US6614088B1 (en) | 2000-02-18 | 2000-02-18 | Breakdown improvement method and sturcture for lateral DMOS device |
US09506711 | 2000-02-18 | ||
PCT/US2001/003701 WO2001061758A1 (en) | 2000-02-18 | 2001-02-02 | Lateral dmos improved breakdown structure and method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001241449A1 true AU2001241449A1 (en) | 2001-08-27 |
Family
ID=24015703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001241449A Abandoned AU2001241449A1 (en) | 2000-02-18 | 2001-02-02 | Lateral dmos improved breakdown structure and method |
Country Status (6)
Country | Link |
---|---|
US (1) | US6614088B1 (en) |
EP (1) | EP1183734A1 (en) |
JP (1) | JP2003523633A (en) |
CN (1) | CN1364316A (en) |
AU (1) | AU2001241449A1 (en) |
WO (1) | WO2001061758A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744117B2 (en) * | 2002-02-28 | 2004-06-01 | Motorola, Inc. | High frequency semiconductor device and method of manufacture |
US7485916B2 (en) * | 2003-09-22 | 2009-02-03 | Nxp, B.V. | Dynamic control of capacitance elements in field effect structures |
JP4757449B2 (en) * | 2004-01-29 | 2011-08-24 | 三菱電機株式会社 | Semiconductor device |
US20050274985A1 (en) * | 2004-05-26 | 2005-12-15 | Adlerstein Michael G | RF decoupled field plate for FETs |
US7109562B2 (en) * | 2005-02-07 | 2006-09-19 | Leadtrend Technology Corp. | High voltage laterally double-diffused metal oxide semiconductor |
KR100734507B1 (en) | 2005-05-12 | 2007-07-03 | 하이맥스 테크놀로지스, 인코포레이션 | A structure for current leakage prevention of a high voltage device |
US7382030B1 (en) | 2006-07-25 | 2008-06-03 | Rf Micro Devices, Inc. | Integrated metal shield for a field effect transistor |
DE102009038709B4 (en) | 2009-08-25 | 2017-05-11 | Infineon Technologies Austria Ag | Semiconductor device with dielectric layer stack |
DE102014005879B4 (en) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertical semiconductor device |
CN104201207A (en) * | 2014-09-16 | 2014-12-10 | 电子科技大学 | High-voltage MOS (metal oxide semiconductor) device with adaptive bias field plates |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922708A (en) | 1974-03-04 | 1975-11-25 | Ibm | Method of producing high value ion implanted resistors |
US4947232A (en) | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
GB2150746B (en) * | 1983-12-02 | 1988-02-24 | Habib Serag El Din El Sayed | Mos transistor with surface accumulation region |
JPS61168253A (en) | 1985-01-19 | 1986-07-29 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
US4825278A (en) * | 1985-10-17 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Radiation hardened semiconductor devices |
US4823173A (en) | 1986-01-07 | 1989-04-18 | Harris Corporation | High voltage lateral MOS structure with depleted top gate region |
US5264719A (en) | 1986-01-07 | 1993-11-23 | Harris Corporation | High voltage lateral semiconductor device |
US4782460A (en) * | 1987-04-06 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Computing apparatus comprising a programmable resistor |
JP2689703B2 (en) | 1989-08-03 | 1997-12-10 | 富士電機株式会社 | MOS type semiconductor device |
US5329155A (en) * | 1990-04-24 | 1994-07-12 | Xerox Corporation | Thin film integrated circuit resistor |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
JP2556175B2 (en) * | 1990-06-12 | 1996-11-20 | 三菱電機株式会社 | Structure for preventing electric field concentration in semiconductor devices |
JP3207615B2 (en) * | 1992-06-24 | 2001-09-10 | 株式会社東芝 | Semiconductor device |
DE4343140B4 (en) * | 1993-12-17 | 2009-12-03 | Robert Bosch Gmbh | Semiconductor arrangement for influencing the breakdown voltage of transistors |
US5466963A (en) | 1994-01-13 | 1995-11-14 | Harris Corporation | Trench resistor architecture |
JP2786104B2 (en) | 1994-02-28 | 1998-08-13 | 日本電気株式会社 | Semiconductor device |
US5587329A (en) * | 1994-08-24 | 1996-12-24 | David Sarnoff Research Center, Inc. | Method for fabricating a switching transistor having a capacitive network proximate a drift region |
US6110804A (en) * | 1996-12-02 | 2000-08-29 | Semiconductor Components Industries, Llc | Method of fabricating a semiconductor device having a floating field conductor |
-
2000
- 2000-02-18 US US09/506,711 patent/US6614088B1/en not_active Expired - Lifetime
-
2001
- 2001-02-02 EP EP01912696A patent/EP1183734A1/en not_active Withdrawn
- 2001-02-02 CN CN01800538A patent/CN1364316A/en active Pending
- 2001-02-02 AU AU2001241449A patent/AU2001241449A1/en not_active Abandoned
- 2001-02-02 JP JP2001560453A patent/JP2003523633A/en active Pending
- 2001-02-02 WO PCT/US2001/003701 patent/WO2001061758A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1364316A (en) | 2002-08-14 |
EP1183734A1 (en) | 2002-03-06 |
WO2001061758A1 (en) | 2001-08-23 |
JP2003523633A (en) | 2003-08-05 |
US6614088B1 (en) | 2003-09-02 |
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