AU2001234648A1 - Mos-gated devices with alternating zones of conductivity - Google Patents
Mos-gated devices with alternating zones of conductivityInfo
- Publication number
- AU2001234648A1 AU2001234648A1 AU2001234648A AU3464801A AU2001234648A1 AU 2001234648 A1 AU2001234648 A1 AU 2001234648A1 AU 2001234648 A AU2001234648 A AU 2001234648A AU 3464801 A AU3464801 A AU 3464801A AU 2001234648 A1 AU2001234648 A1 AU 2001234648A1
- Authority
- AU
- Australia
- Prior art keywords
- mos
- conductivity
- alternating zones
- gated devices
- gated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/502,712 US6376878B1 (en) | 2000-02-11 | 2000-02-11 | MOS-gated devices with alternating zones of conductivity |
US09502712 | 2000-02-11 | ||
PCT/US2001/002964 WO2001059848A2 (en) | 2000-02-11 | 2001-01-30 | Mos-gated semiconductor device having alternating conductivity type semiconductor regions and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001234648A1 true AU2001234648A1 (en) | 2001-08-20 |
Family
ID=23999054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001234648A Abandoned AU2001234648A1 (en) | 2000-02-11 | 2001-01-30 | Mos-gated devices with alternating zones of conductivity |
Country Status (7)
Country | Link |
---|---|
US (1) | US6376878B1 (en) |
EP (1) | EP1256133B1 (en) |
JP (2) | JP2003523089A (en) |
KR (1) | KR100692877B1 (en) |
AU (1) | AU2001234648A1 (en) |
DE (1) | DE60143882D1 (en) |
WO (1) | WO2001059848A2 (en) |
Families Citing this family (66)
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JP2001284584A (en) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
US7745289B2 (en) * | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
US6649975B2 (en) * | 2000-11-16 | 2003-11-18 | Silicon Semiconductor Corporation | Vertical power devices having trench-based electrodes therein |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6803626B2 (en) * | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
US6916745B2 (en) * | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
FI120310B (en) * | 2001-02-13 | 2009-09-15 | Valtion Teknillinen | An improved method for producing secreted proteins in fungi |
US6756273B2 (en) * | 2001-03-12 | 2004-06-29 | Semiconductor Components Industries, L.L.C. | Semiconductor component and method of manufacturing |
US6512267B2 (en) * | 2001-04-12 | 2003-01-28 | International Rectifier Corporation | Superjunction device with self compensated trench walls |
US6555873B2 (en) * | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US7061066B2 (en) * | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
US6750104B2 (en) * | 2001-12-31 | 2004-06-15 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
US6686244B2 (en) * | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
JP3652322B2 (en) * | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | Vertical MOSFET and manufacturing method thereof |
US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
US6870218B2 (en) * | 2002-12-10 | 2005-03-22 | Fairchild Semiconductor Corporation | Integrated circuit structure with improved LDMOS design |
US6979862B2 (en) * | 2003-01-23 | 2005-12-27 | International Rectifier Corporation | Trench MOSFET superjunction structure and method to manufacture |
DE10316710B3 (en) * | 2003-04-11 | 2004-08-12 | Infineon Technologies Ag | Making semiconductor layer with compensation structure for MOS transistor manufacture employs thermal oxidation conversion reaction influencing local dopant concentrations |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP4209260B2 (en) * | 2003-06-04 | 2009-01-14 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
KR100994719B1 (en) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | Superjunction semiconductor device |
JP4903055B2 (en) * | 2003-12-30 | 2012-03-21 | フェアチャイルド・セミコンダクター・コーポレーション | Power semiconductor device and manufacturing method thereof |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
DE102004046697B4 (en) * | 2004-09-24 | 2020-06-10 | Infineon Technologies Ag | High-voltage-resistant semiconductor component with vertically conductive semiconductor body regions and a trench structure, and method for producing the same |
AT504998A2 (en) | 2005-04-06 | 2008-09-15 | Fairchild Semiconductor | TRENCHED-GATE FIELD EFFECT TRANSISTORS AND METHOD FOR MAKING THE SAME |
US7393749B2 (en) * | 2005-06-10 | 2008-07-01 | Fairchild Semiconductor Corporation | Charge balance field effect transistor |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
JP5015762B2 (en) * | 2007-01-09 | 2012-08-29 | 株式会社ワイ・ワイ・エル | Semiconductor device |
CN103762243B (en) | 2007-09-21 | 2017-07-28 | 飞兆半导体公司 | Power device |
TW200921912A (en) * | 2007-11-05 | 2009-05-16 | Anpec Electronics Corp | Power transistor capable of decreasing capacitance between gate and drain |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
KR100943498B1 (en) | 2007-12-26 | 2010-02-22 | 주식회사 동부하이텍 | A semiconductor device and a method of fabricating the same |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
WO2010065428A2 (en) * | 2008-12-01 | 2010-06-10 | Maxpower Semiconductor Inc. | Mos-gated power devices, methods, and integrated circuits |
US7888734B2 (en) * | 2008-12-04 | 2011-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-voltage MOS devices having gates extending into recesses of substrates |
US8174067B2 (en) * | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
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TWI587503B (en) * | 2012-01-11 | 2017-06-11 | 世界先進積體電路股份有限公司 | Semiconductor device and fabricating method thereof |
JP2012160753A (en) * | 2012-04-13 | 2012-08-23 | Denso Corp | Semiconductor device manufacturing method |
US9099519B2 (en) * | 2012-05-23 | 2015-08-04 | Great Wall Semiconductor Corporation | Semiconductor device and method of forming junction enhanced trench power MOSFET |
US9093520B2 (en) * | 2013-08-28 | 2015-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-voltage super junction by trench and epitaxial doping |
US10192958B2 (en) * | 2014-06-24 | 2019-01-29 | General Electric Company | Cellular layout for semiconductor devices |
US10199465B2 (en) * | 2014-06-24 | 2019-02-05 | General Electric Company | Cellular layout for semiconductor devices |
CN104599972B (en) * | 2014-12-19 | 2018-08-14 | 成都士兰半导体制造有限公司 | A kind of semiconductor devices and forming method thereof |
CN106158975A (en) * | 2016-08-30 | 2016-11-23 | 扬州扬杰电子科技股份有限公司 | The power MOSFET cellular of a kind of band bucking electrode and processing technique thereof |
JP6818712B2 (en) * | 2018-03-22 | 2021-01-20 | 株式会社東芝 | Semiconductor device |
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US10957791B2 (en) * | 2019-03-08 | 2021-03-23 | Infineon Technologies Americas Corp. | Power device with low gate charge and low figure of merit |
US11271100B2 (en) * | 2019-10-15 | 2022-03-08 | Infineon Technologies Austria Ag | Narrow semiconductor mesa device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1019720B (en) * | 1991-03-19 | 1992-12-30 | 电子科技大学 | Power semiconductor device |
JP3291957B2 (en) * | 1995-02-17 | 2002-06-17 | 富士電機株式会社 | Vertical trench MISFET and method of manufacturing the same |
JPH08264772A (en) * | 1995-03-23 | 1996-10-11 | Toyota Motor Corp | Field-effect type semiconductor element |
JPH09266311A (en) * | 1996-01-22 | 1997-10-07 | Fuji Electric Co Ltd | Semiconductor device and its manufacture |
JPH09213939A (en) * | 1996-01-30 | 1997-08-15 | Nec Corp | Semiconductor device |
JP3938964B2 (en) * | 1997-02-10 | 2007-06-27 | 三菱電機株式会社 | High voltage semiconductor device and manufacturing method thereof |
WO2000068997A1 (en) * | 1999-05-06 | 2000-11-16 | C.P. Clare Corporation | Mosfet with field reducing trenches in body region |
EP1192640A2 (en) * | 1999-06-03 | 2002-04-03 | GENERAL SEMICONDUCTOR, Inc. | Power mosfet and method of making the same |
JP2001345444A (en) * | 1999-10-25 | 2001-12-14 | Seiko Instruments Inc | Semiconductor device and its manufacturing method |
-
2000
- 2000-02-11 US US09/502,712 patent/US6376878B1/en not_active Expired - Lifetime
-
2001
- 2001-01-30 EP EP01906781A patent/EP1256133B1/en not_active Expired - Lifetime
- 2001-01-30 AU AU2001234648A patent/AU2001234648A1/en not_active Abandoned
- 2001-01-30 DE DE60143882T patent/DE60143882D1/en not_active Expired - Lifetime
- 2001-01-30 WO PCT/US2001/002964 patent/WO2001059848A2/en active Application Filing
- 2001-01-30 JP JP2001559070A patent/JP2003523089A/en active Pending
- 2001-01-30 KR KR1020027010322A patent/KR100692877B1/en active IP Right Grant
-
2012
- 2012-02-23 JP JP2012037300A patent/JP2012138600A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2003523089A (en) | 2003-07-29 |
KR100692877B1 (en) | 2007-03-12 |
EP1256133A2 (en) | 2002-11-13 |
KR20020075404A (en) | 2002-10-04 |
WO2001059848A2 (en) | 2001-08-16 |
EP1256133B1 (en) | 2011-01-19 |
US6376878B1 (en) | 2002-04-23 |
JP2012138600A (en) | 2012-07-19 |
DE60143882D1 (en) | 2011-03-03 |
WO2001059848A3 (en) | 2002-05-02 |
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