AU2001231753A1 - Condensation coating method - Google Patents

Condensation coating method

Info

Publication number
AU2001231753A1
AU2001231753A1 AU2001231753A AU3175301A AU2001231753A1 AU 2001231753 A1 AU2001231753 A1 AU 2001231753A1 AU 2001231753 A AU2001231753 A AU 2001231753A AU 3175301 A AU3175301 A AU 3175301A AU 2001231753 A1 AU2001231753 A1 AU 2001231753A1
Authority
AU
Australia
Prior art keywords
substrate
coating method
reaction gases
condensation
condensation coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001231753A
Inventor
Holger Jurgensen
Johannes Kappeler
Dietmar Schmitz
Gert Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2001231753A1 publication Critical patent/AU2001231753A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/60Deposition of organic layers from vapour phase
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/006Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterized by the colour of the layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Materials For Medical Uses (AREA)

Abstract

A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
AU2001231753A 2000-02-16 2001-02-15 Condensation coating method Abandoned AU2001231753A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10007059.0 2000-02-16
DE10007059A DE10007059A1 (en) 2000-02-16 2000-02-16 Method and device for producing coated substrates by means of condensation coating
PCT/EP2001/001698 WO2001061071A2 (en) 2000-02-16 2001-02-15 Condensation coating method

Publications (1)

Publication Number Publication Date
AU2001231753A1 true AU2001231753A1 (en) 2001-08-27

Family

ID=7631198

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001231753A Abandoned AU2001231753A1 (en) 2000-02-16 2001-02-15 Condensation coating method

Country Status (9)

Country Link
US (1) US7201942B2 (en)
EP (1) EP1255876B1 (en)
JP (1) JP4789384B2 (en)
KR (1) KR100780142B1 (en)
AT (1) ATE246268T1 (en)
AU (1) AU2001231753A1 (en)
DE (2) DE10007059A1 (en)
TW (1) TWI227748B (en)
WO (1) WO2001061071A2 (en)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
JP3682465B2 (en) * 1999-03-31 2005-08-10 独立行政法人産業技術総合研究所 Resin molded product surface layer modification method and apparatus therefor, and resin molded product with modified surface layer, resin molded product surface layer colored method and apparatus and surface molded resin product with colored surface layer, and Resin molded product with added functionality by modifying the surface layer
US6572706B1 (en) * 2000-06-19 2003-06-03 Simplus Systems Corporation Integrated precursor delivery system
WO2002058126A1 (en) 2001-01-22 2002-07-25 Tokyo Electron Limited Device and method for treatment
JP3990881B2 (en) * 2001-07-23 2007-10-17 株式会社日立製作所 Semiconductor manufacturing apparatus and cleaning method thereof
US7404862B2 (en) * 2001-09-04 2008-07-29 The Trustees Of Princeton University Device and method for organic vapor jet deposition
US8535759B2 (en) 2001-09-04 2013-09-17 The Trustees Of Princeton University Method and apparatus for depositing material using a dynamic pressure
US7431968B1 (en) 2001-09-04 2008-10-07 The Trustees Of Princeton University Process and apparatus for organic vapor jet deposition
US7744957B2 (en) 2003-10-23 2010-06-29 The Trustees Of Princeton University Method and apparatus for depositing material
KR100998059B1 (en) * 2001-09-04 2010-12-03 더 트러스티즈 오브 프린스턴 유니버시티 Method and device for fabricating an organic film
US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
DE10212923A1 (en) * 2002-03-22 2004-01-08 Aixtron Ag Process for coating a substrate and device for carrying out the process
US7208195B2 (en) * 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
JP2004055401A (en) * 2002-07-22 2004-02-19 Sony Corp Organic film formation device
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6797337B2 (en) * 2002-08-19 2004-09-28 Micron Technology, Inc. Method for delivering precursors
JP4352783B2 (en) * 2002-08-23 2009-10-28 東京エレクトロン株式会社 Gas supply system and processing system
US7067170B2 (en) * 2002-09-23 2006-06-27 Eastman Kodak Company Depositing layers in OLED devices using viscous flow
KR100473806B1 (en) * 2002-09-28 2005-03-10 한국전자통신연구원 Method and apparatus using large area organic vapor deposition for organic thin film and organic devices
DE10256850A1 (en) * 2002-12-04 2004-06-24 Basf Ag Process and vapor deposition of compound (s) on a support
WO2004088729A1 (en) * 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
JP4463492B2 (en) * 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 Manufacturing equipment
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
JP2007500794A (en) * 2003-05-16 2007-01-18 エスブイティー アソーシエイツ インコーポレイテッド Thin film evaporation evaporator
DE10324880B4 (en) * 2003-05-30 2007-04-05 Schott Ag Process for the preparation of OLEDs
US6837939B1 (en) * 2003-07-22 2005-01-04 Eastman Kodak Company Thermal physical vapor deposition source using pellets of organic material for making OLED displays
DE102004021578A1 (en) * 2003-09-17 2005-04-21 Aixtron Ag Method and apparatus for depositing mono- or multi-component layers and layer sequences using non-continuous injection of liquid and dissolved starting substances via a multi-channel injection unit
US20050079278A1 (en) * 2003-10-14 2005-04-14 Burrows Paul E. Method and apparatus for coating an organic thin film on a substrate from a fluid source with continuous feed capability
KR100513920B1 (en) * 2003-10-31 2005-09-08 주식회사 시스넥스 Chemical vapor deposition unit
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4607474B2 (en) * 2004-02-12 2011-01-05 東京エレクトロン株式会社 Deposition equipment
JP4451684B2 (en) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 Vacuum processing equipment
US20050281948A1 (en) * 2004-06-17 2005-12-22 Eastman Kodak Company Vaporizing temperature sensitive materials
JP4545504B2 (en) * 2004-07-15 2010-09-15 株式会社半導体エネルギー研究所 Film forming method and light emitting device manufacturing method
EP1774056B1 (en) * 2004-07-15 2011-05-18 Aixtron SE Method for the deposition of layers containing silicon and germanium
JP2006057173A (en) * 2004-08-24 2006-03-02 Tohoku Pioneer Corp Film deposition source, vacuum film deposition apparatus and method for producing organic el panel
KR101121417B1 (en) * 2004-10-28 2012-03-15 주성엔지니어링(주) Manufacturing apparatus for display device
KR100583542B1 (en) * 2004-11-06 2006-05-26 주식회사 아이피에스 An apparatus for depositing thin film on a wafer
KR100965408B1 (en) * 2004-12-02 2010-06-24 엘아이지에이디피 주식회사 Apparatus for depositing organic and inorganic material of oled
US7776456B2 (en) * 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
FR2878863B1 (en) * 2004-12-07 2007-11-23 Addon Sa VACUUM DEPOSITION DEVICE WITH RECHARGEABLE RESERVOIR AND CORRESPONDING VACUUM DEPOSITION METHOD.
JP4560394B2 (en) * 2004-12-13 2010-10-13 長州産業株式会社 Molecule supply equipment for thin film formation
US20060134301A1 (en) * 2004-12-22 2006-06-22 Unilever Bestfoods, North America, Division Of Conopco, Inc. Method for making a food composition with a preservative free enhancer and a food composition
EP1752555A1 (en) * 2005-07-28 2007-02-14 Applied Materials GmbH & Co. KG Vaporizing device
EP1930465A4 (en) 2005-09-06 2010-04-07 Univ Tohoku Film material and method for prediction of film material
CN101268210A (en) * 2005-09-20 2008-09-17 国立大学法人东北大学 Film forming apparatus, evaporating jig and measuring method
US8357434B1 (en) 2005-12-13 2013-01-22 Lam Research Corporation Apparatus for the deposition of a conformal film on a substrate and methods therefor
KR100764627B1 (en) * 2006-02-01 2007-10-08 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
KR100849929B1 (en) * 2006-09-16 2008-08-26 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof
JP5179739B2 (en) * 2006-09-27 2013-04-10 東京エレクトロン株式会社 Vapor deposition apparatus, vapor deposition apparatus control apparatus, vapor deposition apparatus control method, and vapor deposition apparatus usage method
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
DE102007020852A1 (en) * 2007-05-02 2008-11-06 Stein, Ralf Gas supply system and method for providing a gaseous deposition medium
DE102007030499A1 (en) 2007-06-30 2009-01-08 Aixtron Ag Apparatus and method for depositing in particular doped layers by means of OVPD or the like
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
FR2930561B1 (en) * 2008-04-28 2011-01-14 Altatech Semiconductor DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE.
US20110070370A1 (en) * 2008-05-28 2011-03-24 Aixtron Ag Thermal gradient enhanced chemical vapour deposition (tge-cvd)
DE102009003781A1 (en) * 2008-06-03 2009-12-10 Aixtron Ag A method for depositing a thin-film polymer in a low pressure gas phase
DE102008026974A1 (en) * 2008-06-03 2009-12-10 Aixtron Ag Method and apparatus for depositing thin layers of polymeric para-xylylenes or substituted para-xylylenes
KR100994920B1 (en) * 2008-06-05 2010-11-17 주식회사 소로나 Thin film coating apparatus of forming vapor phase self-assembled monolayer
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US9117773B2 (en) * 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
US8801856B2 (en) 2009-09-08 2014-08-12 Universal Display Corporation Method and system for high-throughput deposition of patterned organic thin films
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US9634165B2 (en) * 2009-11-02 2017-04-25 International Business Machines Corporation Regeneration method for restoring photovoltaic cell efficiency
JP2011117030A (en) * 2009-12-02 2011-06-16 Ulvac Japan Ltd Vapor deposition polymerizer
TWI372081B (en) 2010-02-02 2012-09-11 Hermes Epitek Corp Showerhead
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
DE102011051263B4 (en) * 2011-06-22 2022-08-11 Aixtron Se Device for aerosol generation and deposition of a light-emitting layer
DE102012203212A1 (en) * 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Coating system useful for producing layer on substrate using growth process, preferably for performing atomic layer deposition, comprises supply container, in which liquid starting material for layer is provided, and evaporator unit
KR20210135341A (en) 2012-05-31 2021-11-12 엔테그리스, 아이엔씨. Source reagent-based delivery of fluid with high material flux for batch deposition
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
DE102012022744B4 (en) * 2012-11-21 2016-11-24 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Device for adjusting a gas phase in a reaction chamber
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP5837962B1 (en) * 2014-07-08 2015-12-24 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and gas rectifier
WO2016037964A1 (en) * 2014-09-08 2016-03-17 Cynora Gmbh Improved optically active layer and method for the production thereof
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
DE102014115497A1 (en) 2014-10-24 2016-05-12 Aixtron Se Tempered gas supply with diluent gas streams fed in at several points
JP6442234B2 (en) * 2014-11-07 2018-12-19 株式会社ニューフレアテクノロジー Vapor growth apparatus, storage container, and vapor growth method
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
GB201513339D0 (en) * 2015-07-29 2015-09-09 Pilkington Group Ltd Coating apparatus
US10403515B2 (en) * 2015-09-24 2019-09-03 Applied Materials, Inc. Loadlock integrated bevel etcher system
US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US10403474B2 (en) 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
DE102016118345A1 (en) 2016-08-01 2018-02-01 Aixtron Se Conditioning process for a CVD reactor
US20190211446A1 (en) 2016-08-09 2019-07-11 Singulus Technologies Ag A Non-Contact Substrate Carrier for Simultaneous Rotation and Levitation of a Substrate
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
TWI649446B (en) * 2017-03-15 2019-02-01 漢民科技股份有限公司 Detachable gas injectorused for semiconductor equipment
DE102017106431A1 (en) * 2017-03-24 2018-09-27 Aixtron Se Apparatus and method for reducing the water partial pressure in an OVPD coating device
KR102369676B1 (en) * 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
WO2019113478A1 (en) 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR20190090414A (en) * 2018-01-24 2019-08-02 삼성디스플레이 주식회사 Deposition apparatus
JP6905149B2 (en) * 2019-02-14 2021-07-21 株式会社日立ハイテク Semiconductor manufacturing equipment
FI129578B (en) * 2019-06-28 2022-05-13 Beneq Oy An atomic layer deposition apparatus
KR20220035192A (en) 2019-07-17 2022-03-21 램 리써치 코포레이션 Modulation of Oxidation Profiles for Substrate Processing
DE102019129789A1 (en) * 2019-11-05 2021-05-06 Aixtron Se Process for depositing a two-dimensional layer and CVD reactor
CN116670322A (en) * 2020-12-19 2023-08-29 朗姆研究公司 Atomic layer deposition using multiple uniformly heated feed volumes
DE102021120004A1 (en) 2021-08-02 2023-02-02 Thyssenkrupp Steel Europe Ag Coating system for coating an object, method for coating an object and use

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62273714A (en) * 1986-05-21 1987-11-27 Clarion Co Ltd Method and apparatus for supplying organic metal gas
JPH04114728A (en) * 1990-09-04 1992-04-15 Matsushita Electric Ind Co Ltd Liquid source supplying apparatus
US5186410A (en) 1991-06-12 1993-02-16 Toews Timothy R Wire reel mechanism
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
JP2987663B2 (en) 1992-03-10 1999-12-06 株式会社日立製作所 Substrate processing equipment
US5381605A (en) 1993-01-08 1995-01-17 Photonics Research Incorporated Method and apparatus for delivering gas
FR2707671B1 (en) 1993-07-12 1995-09-15 Centre Nat Rech Scient Method and device for introducing precursors into a chemical vapor deposition chamber.
JPH0781965A (en) * 1993-07-22 1995-03-28 Sumitomo Electric Ind Ltd Gas producer, method for producing optical waveguide and optical fiber preform and device therefor
DE69535412D1 (en) * 1994-04-08 2007-04-12 Canon Kk Processing system for the production of semiconductor devices
GB9411911D0 (en) 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5410178A (en) * 1994-08-22 1995-04-25 Northwestern University Semiconductor films
JPH08176826A (en) * 1994-12-28 1996-07-09 Mitsubishi Electric Corp Thin film depositing device by cvd, deposition method and cvd material and liquid material vessel used in the device or method
US5776254A (en) * 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
JP3360098B2 (en) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 Shower head structure of processing equipment
US5554220A (en) * 1995-05-19 1996-09-10 The Trustees Of Princeton University Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
JP3612839B2 (en) 1996-02-13 2005-01-19 三菱電機株式会社 High dielectric constant thin film structure, high dielectric constant thin film forming method, and high dielectric constant thin film forming apparatus
JP3585633B2 (en) * 1996-03-19 2004-11-04 株式会社アルバック Vapor deposition polymerization equipment
US5997642A (en) 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
US5976261A (en) 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US6090210A (en) 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US5882410A (en) 1996-10-01 1999-03-16 Mitsubishi Denki Kabushiki Kaisha High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6019848A (en) * 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
WO1998023788A1 (en) * 1996-11-27 1998-06-04 Emcore Corporation Chemical vapor deposition apparatus
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JPH10330910A (en) * 1997-06-04 1998-12-15 Toray Ind Inc Shadow mask and its production
US5882416A (en) * 1997-06-19 1999-03-16 Advanced Technology Materials, Inc. Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
DE19813523C2 (en) 1998-03-26 2000-03-02 Aixtron Ag CVD reactor and its use
DE59900317D1 (en) * 1998-02-18 2001-11-22 Aixtron Ag CVD REACTOR AND THEIR USE
JP2000001783A (en) * 1998-06-15 2000-01-07 Sony Corp Film forming device and cleaning method therefor
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6309465B1 (en) * 1999-02-18 2001-10-30 Aixtron Ag. CVD reactor
ATE249532T1 (en) * 2000-02-04 2003-09-15 Aixtron Ag DEVICE AND METHOD FOR DEPOSITING ONE OR MORE LAYERS ONTO A SUBSTRATE

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