AU1383795A - Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it - Google Patents

Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it

Info

Publication number
AU1383795A
AU1383795A AU13837/95A AU1383795A AU1383795A AU 1383795 A AU1383795 A AU 1383795A AU 13837/95 A AU13837/95 A AU 13837/95A AU 1383795 A AU1383795 A AU 1383795A AU 1383795 A AU1383795 A AU 1383795A
Authority
AU
Australia
Prior art keywords
nitrogen
oxygen
group
chemical compounds
periodic system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU13837/95A
Inventor
Miladin P. Lazarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MAYER ISABELLA VERONIKA
Original Assignee
ISABELLA VERONIKA MAYER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ISABELLA VERONIKA MAYER filed Critical ISABELLA VERONIKA MAYER
Publication of AU1383795A publication Critical patent/AU1383795A/en
Abandoned legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0821—Oxynitrides of metals, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/25—Coatings made of metallic material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a material containing chemical compounds and placed between one or several metals of group IV A of the periodic system, nitrogen and oxygen. In this material it is possible to adjust the optical and electrical properties over a wide range by means of small cavities without having to change the chemical composition. The material is particularly suitable as selective radiation converter in the solar energy and nuclear power station industry. Besides other production processes, it can be deposited as a thin film on substrates by reactive vacuum metallisation.
AU13837/95A 1993-12-23 1994-12-19 Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it Abandoned AU1383795A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4344258A DE4344258C1 (en) 1993-12-23 1993-12-23 Material from chemical compounds with a metal of group IV A of the periodic table, nitrogen and oxygen, its use and production method
DE4344258 1993-12-23
PCT/EP1994/004213 WO1995017533A1 (en) 1993-12-23 1994-12-19 Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it

Publications (1)

Publication Number Publication Date
AU1383795A true AU1383795A (en) 1995-07-10

Family

ID=6506067

Family Applications (1)

Application Number Title Priority Date Filing Date
AU13837/95A Abandoned AU1383795A (en) 1993-12-23 1994-12-19 Material of chemical compounds with a metal in group iv a of the periodic system, nitrogen and oxygen and process for producing it

Country Status (10)

Country Link
EP (1) EP0736109B1 (en)
JP (1) JP3524552B2 (en)
CN (1) CN1070933C (en)
AT (1) ATE194395T1 (en)
AU (1) AU1383795A (en)
DE (1) DE4344258C1 (en)
DK (1) DK0736109T3 (en)
ES (1) ES2149342T3 (en)
GR (1) GR3034501T3 (en)
WO (1) WO1995017533A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19506188C2 (en) * 1995-02-22 2003-03-06 Miladin Lazarov Implant and its use
DE19601238C2 (en) 1996-01-15 2001-09-06 Miladin Lazarov Colored radiant energy converter
DE19730884A1 (en) * 1997-07-18 1999-01-21 Leybold Ag Chromium oxynitride sputter deposition from pure chromium target
DE19950386A1 (en) * 1999-10-19 2001-05-10 Miladin Lazarov Biocompatible item
DE10058931A1 (en) * 2000-11-28 2002-06-20 Tinox Ges Fuer Energieforschun Patterned radiant energy converter
DE10122329B4 (en) * 2001-05-08 2004-06-03 Tinox Gmbh Heat exchanger device with a surface-coated wall that separates medium 1 from medium 2
ITRM20010349A1 (en) * 2001-06-18 2002-12-18 Enea Ente Nuove Tec SURFACE COATING OF THE COLLECTOR TUBE OF A SOLAR PARABOLIC LINEAR CONCENTRATOR.
DE10149397A1 (en) * 2001-10-01 2003-04-24 Siemens Ag Hard layer with low coefficient of friction for e.g. tools and wearing surfaces, includes zirconium, nitrogen and oxygen-containing phase
DE102004019061B4 (en) * 2004-04-20 2008-11-27 Peter Lazarov Selective absorber for converting sunlight to heat, a method and apparatus for making the same
CN100439092C (en) * 2006-06-08 2008-12-03 复旦大学 Light heat energy conversion device having metal and non-metal multilayer film structure
DE202009015334U1 (en) 2009-11-11 2010-02-25 Almeco-Tinox Gmbh Optically effective multilayer system for solar absorption
EP2336811B2 (en) 2009-12-21 2024-08-07 ALANOD GmbH & Co. KG Composite material
CN102120373A (en) * 2010-01-26 2011-07-13 东莞理工学院 Solar reflection film material
CN102373431A (en) * 2010-08-26 2012-03-14 鸿富锦精密工业（深圳）有限公司 Anticorrosive treatment method for aluminum alloy surface and product thereof
CN102560392A (en) * 2010-12-24 2012-07-11 鸿富锦精密工业（深圳）有限公司 Aluminum and aluminum alloy surface anti-corrosion processing method and product thereof
EP2525162B1 (en) * 2011-05-19 2013-07-17 Sandvik Intellectual Property AB A solar thermal absorber material
DE102013110118B4 (en) 2013-08-20 2016-02-18 Von Ardenne Gmbh Solar absorber and process for its production
DE102013016316B4 (en) 2013-10-04 2017-10-19 Photon Energy Gmbh Process for producing an absorber for a solar collector of a solar thermal system
JP6587170B2 (en) * 2014-12-26 2019-10-09 国立研究開発法人物質・材料研究機構 Evaporation or distillation fluid, distillation method and distillation apparatus
EP3246423B1 (en) * 2015-01-16 2019-12-18 Kyocera Corporation Cermet decorative component
WO2018138965A1 (en) 2017-01-24 2018-08-02 ナノフロンティアテクノロジー株式会社 Thermal collecting film for solar thermal power generation and manufacturing method for same
CN111733383A (en) * 2019-03-25 2020-10-02 陈远达 Manufacturing process of sterile abrasion-resistant diamond-like composite coating medical scalpel
DK3988859T3 (en) 2020-10-26 2023-02-06 Almeco Gmbh Deformable composite material for free standing solar energy absorbing collection panels with low loss of infrared radiation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3522427A1 (en) * 1985-06-22 1986-02-20 Helmut Dipl Ing Fischer Titanium oxynitride layer for use in sensors
CH664377A5 (en) * 1986-01-16 1988-02-29 Balzers Hochvakuum DECORATIVE BLACK WEAR PROTECTIVE LAYER.
US4861669A (en) * 1987-03-26 1989-08-29 Ppg Industries, Inc. Sputtered titanium oxynitride films
JPH04195125A (en) * 1990-11-28 1992-07-15 Nippon Sheet Glass Co Ltd Dimmer
DE59205177D1 (en) * 1991-12-13 1996-03-07 Balzers Hochvakuum Coated transparent substrate, use thereof, method and system for producing the layers, and hafnium oxynitride (HfOxNy) with 1.5 x / y 3 and 2.6 n 2.8

Also Published As

Publication number Publication date
JPH09507095A (en) 1997-07-15
JP3524552B2 (en) 2004-05-10
ES2149342T3 (en) 2000-11-01
ATE194395T1 (en) 2000-07-15
EP0736109A1 (en) 1996-10-09
GR3034501T3 (en) 2000-12-29
CN1138353A (en) 1996-12-18
DE4344258C1 (en) 1995-08-31
DK0736109T3 (en) 2000-10-23
EP0736109B1 (en) 2000-07-05
WO1995017533A1 (en) 1995-06-29
CN1070933C (en) 2001-09-12

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