AU1218401A - Fluid processing system - Google Patents
Fluid processing systemInfo
- Publication number
- AU1218401A AU1218401A AU12184/01A AU1218401A AU1218401A AU 1218401 A AU1218401 A AU 1218401A AU 12184/01 A AU12184/01 A AU 12184/01A AU 1218401 A AU1218401 A AU 1218401A AU 1218401 A AU1218401 A AU 1218401A
- Authority
- AU
- Australia
- Prior art keywords
- processing system
- fluid processing
- fluid
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/122—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
- F16K31/1221—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston one side of the piston being spring-loaded
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/126—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a diaphragm, bellows, or the like
- F16K31/1262—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a diaphragm, bellows, or the like one side of the diaphragm being spring loaded
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42182899A | 1999-10-20 | 1999-10-20 | |
US09421823 | 1999-10-20 | ||
US09/421,823 US6296711B1 (en) | 1998-04-14 | 1999-10-20 | Film processing system |
US09421828 | 1999-10-20 | ||
US67846000A | 2000-10-03 | 2000-10-03 | |
US09678460 | 2000-10-03 | ||
PCT/US2000/028998 WO2001029282A2 (fr) | 1999-10-20 | 2000-10-20 | Systeme de traitement de fluide |
Publications (1)
Publication Number | Publication Date |
---|---|
AU1218401A true AU1218401A (en) | 2001-04-30 |
Family
ID=27411324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU12184/01A Abandoned AU1218401A (en) | 1999-10-20 | 2000-10-20 | Fluid processing system |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU1218401A (fr) |
WO (1) | WO2001029282A2 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MXPA06003060A (es) | 2003-09-19 | 2006-05-31 | Akzo Nobel Nv | Metalizacion de sustratos mediante un procedimiento de deposicion de fase de vapor/liquido. |
JP5280861B2 (ja) * | 2006-01-19 | 2013-09-04 | エーエスエム アメリカ インコーポレイテッド | 高温aldインレットマニホールド |
WO2007146888A2 (fr) * | 2006-06-12 | 2007-12-21 | Semequip, Inc. | Injection de vapeur dans des dispositifs à vide |
KR101084275B1 (ko) | 2009-09-22 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법 |
US9574268B1 (en) | 2011-10-28 | 2017-02-21 | Asm America, Inc. | Pulsed valve manifold for atomic layer deposition |
US9388492B2 (en) | 2011-12-27 | 2016-07-12 | Asm America, Inc. | Vapor flow control apparatus for atomic layer deposition |
JP2017509877A (ja) * | 2014-02-24 | 2017-04-06 | モコン・インコーポレーテッド | 統合ブロックマニホールドを利用した頑丈な対象分析物の透過試験器 |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
US10604841B2 (en) * | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US10927459B2 (en) | 2017-10-16 | 2021-02-23 | Asm Ip Holding B.V. | Systems and methods for atomic layer deposition |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
CN110767668B (zh) * | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 |
DE102022004718A1 (de) * | 2022-12-15 | 2024-06-20 | Vat Holding Ag | Gaseinlassventil mit balgantrieb |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3243314A (en) * | 1962-09-14 | 1966-03-29 | Ibm | Silicon oxide film formation |
US3556841A (en) * | 1967-04-11 | 1971-01-19 | Matsushita Electronics Corp | Process for forming silicon dioxide films |
JPS6089575A (ja) * | 1983-10-21 | 1985-05-20 | Seiko Epson Corp | シリコン窒化膜の製造方法 |
US4640221A (en) * | 1985-10-30 | 1987-02-03 | International Business Machines Corporation | Vacuum deposition system with improved mass flow control |
US4780334A (en) * | 1987-03-13 | 1988-10-25 | General Electric Company | Method and composition for depositing silicon dioxide layers |
JPS6422050A (en) * | 1987-07-17 | 1989-01-25 | Matsushita Electric Ind Co Ltd | Method for filling groove |
JPH01300528A (ja) * | 1988-05-30 | 1989-12-05 | Fujitsu Ltd | 薄膜形成方法 |
US4925259A (en) * | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
US5100599A (en) * | 1989-06-15 | 1992-03-31 | The Boeing Company | Method for producing thin film particulates of controlled shape |
NL9002164A (nl) * | 1990-10-05 | 1992-05-06 | Philips Nv | Werkwijze voor het voorzien van een substraat van een oppervlaktelaag vanuit een damp en een inrichting voor het toepassen van een dergelijke werkwijze. |
DE4124018C1 (fr) * | 1991-07-19 | 1992-11-19 | Leybold Ag, 6450 Hanau, De | |
DE4236324C1 (fr) * | 1992-10-28 | 1993-09-02 | Schott Glaswerke, 55122 Mainz, De | |
US5630878A (en) * | 1994-02-20 | 1997-05-20 | Stec Inc. | Liquid material-vaporizing and supplying apparatus |
JPH07254590A (ja) * | 1994-03-15 | 1995-10-03 | Fujitsu Ltd | 半導体装置の製造方法 |
US5776254A (en) * | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
CA2167957A1 (fr) * | 1995-01-27 | 1996-07-28 | Hongwen Li | Methode pour produire un filtre a interference en tantalate/silice sur un substrat vitreux et lampe electrique ainsi obtenue |
US5868159A (en) * | 1996-07-12 | 1999-02-09 | Mks Instruments, Inc. | Pressure-based mass flow controller |
US6074691A (en) * | 1997-06-24 | 2000-06-13 | Balzers Aktiengesellschaft | Method for monitoring the flow of a gas into a vacuum reactor |
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
WO1999053117A2 (fr) * | 1998-04-14 | 1999-10-21 | Cvd Systems, Inc. | Systeme de depot de film |
-
2000
- 2000-10-20 AU AU12184/01A patent/AU1218401A/en not_active Abandoned
- 2000-10-20 WO PCT/US2000/028998 patent/WO2001029282A2/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2001029282A3 (fr) | 2001-11-22 |
WO2001029282A2 (fr) | 2001-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |