ATE8514T1 - Verfahren zum kristallisieren von filmen und so erhaltene filme. - Google Patents

Verfahren zum kristallisieren von filmen und so erhaltene filme.

Info

Publication number
ATE8514T1
ATE8514T1 AT81201013T AT81201013T ATE8514T1 AT E8514 T1 ATE8514 T1 AT E8514T1 AT 81201013 T AT81201013 T AT 81201013T AT 81201013 T AT81201013 T AT 81201013T AT E8514 T1 ATE8514 T1 AT E8514T1
Authority
AT
Austria
Prior art keywords
films
crystallizing
processes
groups
irradiating
Prior art date
Application number
AT81201013T
Other languages
English (en)
Inventor
Lucien Diego Laude
Original Assignee
L'etat Belge, Represente Par Le Secretaire General Des Services De La Programmation De La Politique Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from LU82779A external-priority patent/LU82779A1/fr
Application filed by L'etat Belge, Represente Par Le Secretaire General Des Services De La Programmation De La Politique Scientifique filed Critical L'etat Belge, Represente Par Le Secretaire General Des Services De La Programmation De La Politique Scientifique
Application granted granted Critical
Publication of ATE8514T1 publication Critical patent/ATE8514T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/06—Recrystallisation under a temperature gradient
    • C30B1/08—Zone recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Silicon Compounds (AREA)
AT81201013T 1980-09-18 1981-09-11 Verfahren zum kristallisieren von filmen und so erhaltene filme. ATE8514T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
LU82779A LU82779A1 (fr) 1980-09-18 1980-09-18 Procede de cristallisation de films et films ainsi obtenus
LU83540 1981-08-10
EP81201013A EP0048514B1 (de) 1980-09-18 1981-09-11 Verfahren zum Kristallisieren von Filmen und so erhaltene Filme

Publications (1)

Publication Number Publication Date
ATE8514T1 true ATE8514T1 (de) 1984-08-15

Family

ID=26640271

Family Applications (1)

Application Number Title Priority Date Filing Date
AT81201013T ATE8514T1 (de) 1980-09-18 1981-09-11 Verfahren zum kristallisieren von filmen und so erhaltene filme.

Country Status (5)

Country Link
US (1) US4469551A (de)
EP (1) EP0048514B1 (de)
JP (1) JPS5784132A (de)
AT (1) ATE8514T1 (de)
DE (1) DE3164887D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193782A (ja) * 1983-04-18 1984-11-02 Semiconductor Energy Lab Co Ltd レ−ザ加工機
DE3686161D1 (de) * 1986-09-25 1992-08-27 Lucien Diego Laude Vorrichtung zur laserunterstuetzten, elektrolytischen metallabscheidung.
US5259917A (en) * 1992-07-28 1993-11-09 The United States Of America As Represented By The Secretary Of The Air Force Transparent semiconductor crystals
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6544825B1 (en) * 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
US6300176B1 (en) * 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
JP3469337B2 (ja) 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US6299681B1 (en) * 1998-11-27 2001-10-09 General Electric Company Single crystal conversion control
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2010179724A (ja) * 2009-02-04 2010-08-19 Kanto Auto Works Ltd 車両用の荷物収納システム
FR2965392B1 (fr) 2010-09-29 2013-03-15 Lucien Diego Laude Support d'information enregistrable et a enregistrement legalement sur
DE102011100056B4 (de) * 2011-04-29 2015-01-08 Centrotherm Photovoltaics Ag Verfahren zur Festphasen-Kristallisation einer amorphen oder polykristallinen Schicht
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
KR102538977B1 (ko) 2018-12-05 2023-06-02 삼성디스플레이 주식회사 레이저 조사 방법 및 레이저 조사 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
DE2145921C2 (de) * 1971-09-14 1982-05-06 Günther Dr. 8022 Grünwald Nath Einrichtung zur Materialbearbeitung durch ein Laserstrahlungsbündel mit einem biegsamen Lichtleiter
US3950075A (en) * 1974-02-06 1976-04-13 Corning Glass Works Light source for optical waveguide bundle
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
JPS5342838A (en) * 1976-09-30 1978-04-18 Nippon Telegr & Teleph Corp <Ntt> Core wire for optical fiber cable and its production
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
IT1117550B (it) * 1977-08-01 1986-02-17 Righini Giancarlo Sistema di trasporto e di focalizzazione della radiazione laser con fibra ottica particolarmente per applicazioni mediche chirurgiche e biologiche
US4187126A (en) * 1978-07-28 1980-02-05 Conoco, Inc. Growth-orientation of crystals by raster scanning electron beam
US4305640A (en) * 1978-11-24 1981-12-15 National Research Development Corporation Laser beam annealing diffuser
GB2037000B (en) * 1978-11-24 1982-11-03 Secr Defence Light guide
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface

Also Published As

Publication number Publication date
JPS5784132A (en) 1982-05-26
DE3164887D1 (en) 1984-08-23
EP0048514B1 (de) 1984-07-18
EP0048514A1 (de) 1982-03-31
JPH0578169B2 (de) 1993-10-28
US4469551A (en) 1984-09-04

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