ATE557072T1 - Polierpaste zum polieren eines lsi - Google Patents

Polierpaste zum polieren eines lsi

Info

Publication number
ATE557072T1
ATE557072T1 AT99935076T AT99935076T ATE557072T1 AT E557072 T1 ATE557072 T1 AT E557072T1 AT 99935076 T AT99935076 T AT 99935076T AT 99935076 T AT99935076 T AT 99935076T AT E557072 T1 ATE557072 T1 AT E557072T1
Authority
AT
Austria
Prior art keywords
polishing
lsi
material composition
paste
cerium oxide
Prior art date
Application number
AT99935076T
Other languages
English (en)
Inventor
Takanori Kido
Fumio Tsujino
Kagetaka Ichikawa
Nobuo Uotani
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE557072T1 publication Critical patent/ATE557072T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Disintegrating Or Milling (AREA)
AT99935076T 1998-08-05 1999-08-05 Polierpaste zum polieren eines lsi ATE557072T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22199798 1998-08-05
JP37377798A JP3560484B2 (ja) 1998-08-05 1998-12-28 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
PCT/JP1999/004241 WO2000008678A1 (fr) 1998-08-05 1999-08-05 Composition abrasive pour le polissage de composants lsi

Publications (1)

Publication Number Publication Date
ATE557072T1 true ATE557072T1 (de) 2012-05-15

Family

ID=26524619

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99935076T ATE557072T1 (de) 1998-08-05 1999-08-05 Polierpaste zum polieren eines lsi

Country Status (6)

Country Link
EP (1) EP1130630B1 (de)
JP (1) JP3560484B2 (de)
KR (1) KR100573445B1 (de)
AT (1) ATE557072T1 (de)
TW (1) TW419737B (de)
WO (1) WO2000008678A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
WO2002028979A1 (fr) * 2000-10-02 2002-04-11 Mitsui Mining & Smelting Co.,Ltd. Matiere abrasive a base de cerium et procede de production de ladite matiere
JP3945745B2 (ja) * 2001-03-09 2007-07-18 三井金属鉱業株式会社 セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法
JP3872307B2 (ja) 2001-03-21 2007-01-24 インターナショナル・ビジネス・マシーンズ・コーポレーション オークション方法、オークションシステムおよびプログラム
JP2003277731A (ja) * 2002-03-26 2003-10-02 Catalysts & Chem Ind Co Ltd 研磨用粒子および研磨材
JP4554142B2 (ja) * 2002-04-30 2010-09-29 日揮触媒化成株式会社 基板洗浄用粒子および該基板洗浄用粒子を含む洗浄材、基材の洗浄方法
DE102005017372A1 (de) * 2005-04-14 2006-10-19 Degussa Ag Wässrige Ceroxiddispersion
KR101103748B1 (ko) * 2005-09-27 2012-01-06 삼성코닝정밀소재 주식회사 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
WO2009077412A2 (en) * 2007-12-14 2009-06-25 Akzo Nobel N.V. Aqueous slurry comprising inorganic oxygen-containing particulates
EP2812911B1 (de) * 2012-02-10 2017-06-28 Basf Se Chemisch-mechanische polierzusammensetzung mit einem protein
CN104371552B (zh) * 2013-08-14 2017-09-15 安集微电子（上海）有限公司 含硅有机化合物在延长化学机械抛光液中研磨颗粒稳定性中的应用
CN104371550B (zh) * 2013-08-14 2018-02-09 安集微电子（上海）有限公司 一种用于抛光硅材料的化学机械抛光液
CN104371553B (zh) * 2013-08-14 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液以及应用
CN104275651A (zh) * 2014-09-26 2015-01-14 河南省联合磨料磨具有限公司 一种金刚石抛光膜制备方法
CN109689294B (zh) * 2016-09-16 2022-01-25 霓达杜邦股份有限公司 研磨垫

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127965A (ja) * 1983-12-09 1985-07-08 Matsushita Electric Ind Co Ltd 研摩用組成物
JP2864451B2 (ja) * 1994-11-07 1999-03-03 三井金属鉱業株式会社 研磨材及び研磨方法
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
JP3462052B2 (ja) * 1996-09-30 2003-11-05 日立化成工業株式会社 酸化セリウム研磨剤および基板の研磨法
KR100571892B1 (ko) * 1997-04-30 2006-04-18 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 반도체 웨이퍼 상부 표면의 평탄화 방법

Also Published As

Publication number Publication date
JP3560484B2 (ja) 2004-09-02
TW419737B (en) 2001-01-21
KR100573445B1 (ko) 2006-04-26
EP1130630A4 (de) 2007-01-10
WO2000008678A1 (fr) 2000-02-17
KR20010053235A (ko) 2001-06-25
EP1130630B1 (de) 2012-05-09
EP1130630A1 (de) 2001-09-05
JP2000114211A (ja) 2000-04-21

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