ATE540308T1 - Verfahren und vorrichtung zur messung der zusammensetzung und anderer eigenschaften von dünnfilmen - Google Patents

Verfahren und vorrichtung zur messung der zusammensetzung und anderer eigenschaften von dünnfilmen

Info

Publication number
ATE540308T1
ATE540308T1 AT00980691T AT00980691T ATE540308T1 AT E540308 T1 ATE540308 T1 AT E540308T1 AT 00980691 T AT00980691 T AT 00980691T AT 00980691 T AT00980691 T AT 00980691T AT E540308 T1 ATE540308 T1 AT E540308T1
Authority
AT
Austria
Prior art keywords
composition
layer
measured
dielectric function
calibration samples
Prior art date
Application number
AT00980691T
Other languages
English (en)
Inventor
Peter Rosenthal
Sylvie Charpenay
Victor Yakovlev
Original Assignee
Mks Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mks Instr Inc filed Critical Mks Instr Inc
Application granted granted Critical
Publication of ATE540308T1 publication Critical patent/ATE540308T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
AT00980691T 1999-12-03 2000-11-24 Verfahren und vorrichtung zur messung der zusammensetzung und anderer eigenschaften von dünnfilmen ATE540308T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16897499P 1999-12-03 1999-12-03
US09/718,602 US6485872B1 (en) 1999-12-03 2000-11-22 Method and apparatus for measuring the composition and other properties of thin films utilizing infrared radiation
PCT/US2000/032115 WO2001040775A1 (en) 1999-12-03 2000-11-24 Method and apparatus for measuring the composition and other properties of thin films

Publications (1)

Publication Number Publication Date
ATE540308T1 true ATE540308T1 (de) 2012-01-15

Family

ID=26864641

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00980691T ATE540308T1 (de) 1999-12-03 2000-11-24 Verfahren und vorrichtung zur messung der zusammensetzung und anderer eigenschaften von dünnfilmen

Country Status (5)

Country Link
US (1) US6485872B1 (de)
EP (1) EP1257806B1 (de)
AT (1) ATE540308T1 (de)
AU (1) AU1791801A (de)
WO (1) WO2001040775A1 (de)

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US6486675B1 (en) * 2000-09-29 2002-11-26 Infineon Technologies Ag In-situ method for measuring the endpoint of a resist recess etch process
DE10116773A1 (de) * 2001-04-04 2002-10-17 Bayer Ag Verfahren zur Ermittlung von Spannungs-Dehnungskurven mittels Splineinterpolation auf Basis charakteristischer Punkte und unter dem Einsatz neuronaler Netze
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
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EP1527320A1 (de) 2002-07-12 2005-05-04 Luka Optoscope ApS Vorrichtung und verfahren für die optische messung der topographie von periodischer, beinahe planarer strukturen
US6917849B1 (en) * 2002-12-18 2005-07-12 Advanced Micro Devices, Inc. Method and apparatus for predicting electrical parameters using measured and predicted fabrication parameters
US7126131B2 (en) 2003-01-16 2006-10-24 Metrosol, Inc. Broad band referencing reflectometer
US8564780B2 (en) * 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US20080246951A1 (en) * 2007-04-09 2008-10-09 Phillip Walsh Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces
US7352453B2 (en) * 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
US7110912B1 (en) * 2003-05-20 2006-09-19 J.A. Woollam Co., Inc Method of applying parametric oscillators to model dielectric functions
US7224461B2 (en) * 2003-06-05 2007-05-29 Therma-Wave, Inc. Method for determining modifications to semiconductor optical functions
US7700382B2 (en) * 2003-09-24 2010-04-20 Panasonic Corporation Impurity introducing method using optical characteristics to determine annealing conditions
US7202958B1 (en) * 2004-06-01 2007-04-10 Nanometrics Incorporated Modeling a sample with an underlying complicated structure
EP1632746B1 (de) * 2004-09-07 2007-10-03 Applied Materials GmbH & Co. KG Verfahren zur Bestimmung von physikalischen Eigenschaften einer optischen Schicht oder eines Schichtsystems
US7399975B2 (en) * 2004-08-11 2008-07-15 Metrosol, Inc. Method and apparatus for performing highly accurate thin film measurements
US7804059B2 (en) * 2004-08-11 2010-09-28 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US7511265B2 (en) * 2004-08-11 2009-03-31 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7282703B2 (en) * 2004-08-11 2007-10-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7663097B2 (en) * 2004-08-11 2010-02-16 Metrosol, Inc. Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement
US7474115B1 (en) 2004-12-28 2009-01-06 Dupont Displays, Inc. Organic electronic device display defect detection
US20080129986A1 (en) 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
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US8126694B2 (en) 2008-05-02 2012-02-28 Nanometrics Incorporated Modeling conductive patterns using an effective model
US8153987B2 (en) * 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
JP5712787B2 (ja) * 2011-05-18 2015-05-07 日立化成株式会社 調光フィルムの硬化率の測定方法、調光フィルムの製造方法、及び調光フィルム
DE102015208026A1 (de) * 2015-03-03 2016-09-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur ortsaufgelösten Bestimmung des spezifischen elektrischen Widerstands und/oder der spezifischen elektrischen Leitfähigkeit von Proben
WO2016139233A1 (de) * 2015-03-03 2016-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur ortsaufgelösten bestimmung des spezifischen elektrischen widerstands und/oder der spezifischen elektrischen leitfähigkeit von proben
ITUB20155382A1 (it) * 2015-11-09 2017-05-09 Luca Mucchi Sistema per l?apprendimento da esempi per la modellizzazione di sensori
JP6992633B2 (ja) * 2018-03-22 2022-01-13 セイコーエプソン株式会社 検量装置および検量方法
US10819441B2 (en) * 2018-07-19 2020-10-27 Nokia Solutions And Networks Oy Adaptive digital filtering in an optical receiver
JP7174599B2 (ja) * 2018-11-09 2022-11-17 旭化成株式会社 装置、方法、プログラム、感光性樹脂組成物の製造方法および感光性樹脂積層体の製造方法
JP2021051141A (ja) * 2019-09-24 2021-04-01 旭化成株式会社 装置、方法、プログラム、感光性樹脂組成物の製造方法および感光性樹脂積層体の製造方法
US11309959B2 (en) 2020-06-02 2022-04-19 Nokia Solutions And Networks Oy Direct-detection optical receiver capable of signal-to-signal beat interference cancellation
CN112285063B (zh) * 2020-09-24 2023-06-09 天津津航技术物理研究所 一种超薄金属薄膜红外光学常数的表征方法
DE102020131014B4 (de) 2020-11-24 2025-05-22 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren zum identifizieren einer substanz an einer oberfläche
US12013350B2 (en) 2021-05-05 2024-06-18 Onto Innovation Inc. Effective cell approximation model for logic structures
US20240418633A1 (en) * 2023-06-16 2024-12-19 Kla Corporation Combination of multiwavelength raman and spectroscopic ellipsometry to measure a film stack

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Also Published As

Publication number Publication date
EP1257806A1 (de) 2002-11-20
EP1257806A4 (de) 2009-07-15
EP1257806B1 (de) 2012-01-04
US6485872B1 (en) 2002-11-26
WO2001040775A1 (en) 2001-06-07
AU1791801A (en) 2001-06-12

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