ATE533042T1 - Mikroelektronische sensorvorrichtung - Google Patents

Mikroelektronische sensorvorrichtung

Info

Publication number
ATE533042T1
ATE533042T1 AT08867046T AT08867046T ATE533042T1 AT E533042 T1 ATE533042 T1 AT E533042T1 AT 08867046 T AT08867046 T AT 08867046T AT 08867046 T AT08867046 T AT 08867046T AT E533042 T1 ATE533042 T1 AT E533042T1
Authority
AT
Austria
Prior art keywords
radiation
plane
aperture
diffraction limit
dimension
Prior art date
Application number
AT08867046T
Other languages
English (en)
Inventor
Derk J W Klunder
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE533042T1 publication Critical patent/ATE533042T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/552Attenuated total reflection
    • G01N21/553Attenuated total reflection and using surface plasmons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/645Specially adapted constructive features of fluorimeters
    • G01N21/648Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence

Landscapes

  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Head (AREA)
AT08867046T 2007-12-26 2008-12-18 Mikroelektronische sensorvorrichtung ATE533042T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07301744 2007-12-26
PCT/IB2008/055417 WO2009083884A1 (en) 2007-12-26 2008-12-18 Microelectronic sensor device.

Publications (1)

Publication Number Publication Date
ATE533042T1 true ATE533042T1 (de) 2011-11-15

Family

ID=40545819

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08867046T ATE533042T1 (de) 2007-12-26 2008-12-18 Mikroelektronische sensorvorrichtung

Country Status (7)

Country Link
US (1) US8158398B2 (de)
EP (1) EP2227685B1 (de)
JP (1) JP5238820B2 (de)
CN (1) CN101910827B (de)
AT (1) ATE533042T1 (de)
RU (1) RU2494374C2 (de)
WO (1) WO2009083884A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5810565B2 (ja) * 2011-03-16 2015-11-11 セイコーエプソン株式会社 光学センサー及び電子機器
EP2741074A1 (de) * 2012-12-04 2014-06-11 F. Hoffmann-La Roche AG Vorrichtung zur Verwendung bei der Bindeaffinitätserkennung
EP2824446A1 (de) * 2013-07-12 2015-01-14 F. Hoffmann-La Roche AG Vorrichtung zur Verwendung bei der Bindeaffinitätserkennung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8700851A (nl) * 1987-04-10 1988-11-01 Tno Werkwijze en inrichting voor het detecteren van zeer lage concentraties van een in een meetmedium aanwezige chemische component onder toepassing van oppervlakte-plasmonresonantie en elektrochemisch gestimuleerde adsorptie.
DE59109246D1 (de) * 1990-05-03 2003-04-03 Hoffmann La Roche Mikrooptischer Sensor
RU2181487C2 (ru) * 2000-05-11 2002-04-20 Никитин Петр Иванович Способ оптического детектирования присоединения вещественного компонента к сенсорному материалу на основе биологического, химического или физического взаимодействия и устройство для его осуществления (варианты)
US6818907B2 (en) * 2000-10-17 2004-11-16 The President And Fellows Of Harvard College Surface plasmon enhanced illumination system
EP1616169B1 (de) * 2003-03-27 2009-06-24 Corning Incorporated Markierungsfreier nachweis biologischer und chemischer stoffe mittels evaneszenzfeld
CN1448719A (zh) * 2003-05-13 2003-10-15 上海晶泰生物技术有限公司 新型生物芯片
JP2005016963A (ja) * 2003-06-23 2005-01-20 Canon Inc 化学センサ、化学センサ装置
ZA200610693B (en) * 2004-05-19 2008-06-25 Vp Holding Llc Optical sensor with layered plasmon structure for enhanced detection of chemical groups by sers
JP2008544276A (ja) * 2005-06-23 2008-12-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ サブ波長アパーチャ又はスリットを用いた発光センサ
US8075841B2 (en) * 2005-12-20 2011-12-13 Koninklijke Philips Electronics N.V. Biosensor with one-dimensional sub-diffraction-limited apertures composed of a grid and a polarizer
WO2007072415A2 (en) * 2005-12-22 2007-06-28 Koninklijke Philips Electronics N.V. Luminescence sensor operating in reflection mode
WO2007072418A2 (en) * 2005-12-22 2007-06-28 Koninklijke Philips Electronics N.V. Increasing energy density in sub-wavelength wire-grids
US20100221842A1 (en) * 2007-09-28 2010-09-02 Koninklijke Philips Electronics N.V. Sensor device for the detection of target components
WO2009040721A1 (en) * 2007-09-28 2009-04-02 Koninklijke Philips Electronics N.V. A microelectronic sensor device comprising a carrier with electrical conductors

Also Published As

Publication number Publication date
RU2494374C2 (ru) 2013-09-27
US8158398B2 (en) 2012-04-17
JP2011508232A (ja) 2011-03-10
CN101910827A (zh) 2010-12-08
WO2009083884A1 (en) 2009-07-09
RU2010130989A (ru) 2012-02-10
CN101910827B (zh) 2012-09-05
EP2227685B1 (de) 2011-11-09
JP5238820B2 (ja) 2013-07-17
EP2227685A1 (de) 2010-09-15
US20100276577A1 (en) 2010-11-04

Similar Documents

Publication Publication Date Title
WO2009060360A3 (en) Microelectronic opiacal evanescent field sensor
WO2011026251A8 (fr) Dispositif pour horloge atomique
JP2005156571A5 (de)
TW200730890A (en) Light absorbers and methods
WO2014042903A8 (en) Method for monitoring the properties of a fluid cement composition in a flow|path
WO2013026006A3 (en) Passive detectors for imaging systems
WO2013162787A8 (en) Methods for optically determining a characteristic of a substance
ATE542107T1 (de) Selbstmischende lasermessvorrichtung
WO2006090386A3 (en) A virtual keyboard device
EA201000088A1 (ru) Оптическая кювета
WO2012173999A3 (en) Wafer level spectrometer
TWI256995B (en) Detector and stage device
WO2009003714A3 (de) Vorrichtung und verfahren zur durchführung statischer und dynamischer streulichtmessungen in kleinen volumina
JP2012141311A (ja) パターンドガラス基板の透過率測定装置
EA201170599A1 (ru) Способ и устройство для определения гранулометрического состава бурового раствора
JP2015500492A5 (de)
JP2013527451A5 (ja) ルミネセンスベースセンサシステム
JP2014535060A5 (de)
ATE533042T1 (de) Mikroelektronische sensorvorrichtung
JP2015200745A5 (de)
JP2016512383A5 (de)
CN106556577B (zh) 一种等离子体共振传感器检测系统
JP2013007679A5 (de)
WO2008007061A3 (en) Scale and readhead
Yoon et al. Wideband Omnidirectional Polarization‐Insensitive Light Absorbers Made with 1D Silicon Gratings