ATE523466T1 - Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben - Google Patents

Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben

Info

Publication number
ATE523466T1
ATE523466T1 AT08159904T AT08159904T ATE523466T1 AT E523466 T1 ATE523466 T1 AT E523466T1 AT 08159904 T AT08159904 T AT 08159904T AT 08159904 T AT08159904 T AT 08159904T AT E523466 T1 ATE523466 T1 AT E523466T1
Authority
AT
Austria
Prior art keywords
gate
zone
dielectric
piezoelectric
free
Prior art date
Application number
AT08159904T
Other languages
English (en)
Inventor
Michael Collonge
Olivier Thomas
Maud Vinet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE523466T1 publication Critical patent/ATE523466T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/515—Insulating materials associated therewith with cavities, e.g. containing a gas
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Micromachines (AREA)
  • Electrically Driven Valve-Operating Means (AREA)
  • Fuel-Injection Apparatus (AREA)
  • Electrical Control Of Air Or Fuel Supplied To Internal-Combustion Engine (AREA)
  • Non-Volatile Memory (AREA)
AT08159904T 2007-07-09 2008-07-08 Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben ATE523466T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0756347A FR2918796B1 (fr) 2007-07-09 2007-07-09 Transistor mos a grille suspendue et a fonctionnement non-volatile.

Publications (1)

Publication Number Publication Date
ATE523466T1 true ATE523466T1 (de) 2011-09-15

Family

ID=39102970

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08159904T ATE523466T1 (de) 2007-07-09 2008-07-08 Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben

Country Status (4)

Country Link
US (1) US7812410B2 (de)
EP (1) EP2014611B1 (de)
AT (1) ATE523466T1 (de)
FR (1) FR2918796B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
FR2923646A1 (fr) * 2007-11-09 2009-05-15 Commissariat Energie Atomique Cellule memoire sram dotee de transistors a structure multi-canaux verticale
FR2965507B1 (fr) * 2010-09-30 2012-08-31 Commissariat Energie Atomique Réalisation d'un système déformable en vue du déplacement d'un objet enferme dans celui-ci
DE102011083644A1 (de) 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
US9768271B2 (en) * 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
US9385306B2 (en) 2014-03-14 2016-07-05 The United States Of America As Represented By The Secretary Of The Army Ferroelectric mechanical memory and method
JP6696252B2 (ja) * 2016-03-24 2020-05-20 富士ゼロックス株式会社 通信プログラム、通信装置及び情報処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435786A (en) * 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
JP3450896B2 (ja) * 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US6963103B2 (en) * 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US20050227428A1 (en) * 2002-03-20 2005-10-13 Mihai Ionescu A Process for manufacturing mems
JP4744849B2 (ja) * 2004-11-11 2011-08-10 株式会社東芝 半導体装置
US7193283B2 (en) * 2005-06-20 2007-03-20 Magnachip Semiconductor Ltd. Flash cell using a piezoelectric effect
RU2383945C2 (ru) * 2006-06-09 2010-03-10 Юрий Генрихович Кригер Методы неразрушаемого считывания информации с ферроэлектрических элементов памяти

Also Published As

Publication number Publication date
US20090014769A1 (en) 2009-01-15
US7812410B2 (en) 2010-10-12
FR2918796A1 (fr) 2009-01-16
EP2014611A2 (de) 2009-01-14
EP2014611B1 (de) 2011-09-07
FR2918796B1 (fr) 2010-04-30
EP2014611A3 (de) 2009-05-06

Similar Documents

Publication Publication Date Title
ATE523466T1 (de) Mos-transistor mit frei hängendem gate und nichtflüchtiger funktionsweise mit piezoelektrische aktivierung und herstellungsverfahren desselben
CN105977159B (zh) 用于鳍片上受限于间隔件的外延成长材料的罩盖层
JP2018515927A5 (de)
US9997411B2 (en) Formation of metal resistor and e-fuse
TW200735371A (en) Thin film transistor substrate and thin film transistor substrate manufacturing method
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
TW200730985A (en) Thin film transistor substrate and manufacturing method thereof
TW200419802A (en) Structure of multiple-gate transistor and method for manufacturing the same
TW200504933A (en) Method for manufacturing semiconductor device
JP2009506549A5 (de)
JP2011044517A5 (de)
US9269814B2 (en) Sacrificial layer fin isolation for fin height and leakage control of bulk finFETs
TW200625646A (en) Field effect transistor and fabrication method thereof
WO2007082266A3 (en) Semiconductor transistors with expanded top portions of gates
WO2009011220A1 (ja) 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
SG164324A1 (en) Semiconductor device and manufacturing method of the same
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
Nourbakhsh et al. 15-nm channel length MoS 2 FETs with single-and double-gate structures
TW200737357A (en) Semiconductor structure and method of fabricating thereof
DE602006001828D1 (de) Verfahren zum Herstellen eines Transistors mit selbst justierten Doppel-Gates durch Schrumpfung der Gatestruktur
TW200711140A (en) Thin film transistor substrate and method for fabricating the same
TW200723410A (en) Method for manufacturing semiconductor device capable of improving breakdown voltage characteristics
WO2006135420A3 (en) Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device
JP2017504192A5 (de)
TW200729460A (en) Semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties