ATE516617T1 - Lasersensor für selbstmischende interferometrie mit erhöhtem nachweisbereich - Google Patents
Lasersensor für selbstmischende interferometrie mit erhöhtem nachweisbereichInfo
- Publication number
- ATE516617T1 ATE516617T1 AT08763056T AT08763056T ATE516617T1 AT E516617 T1 ATE516617 T1 AT E516617T1 AT 08763056 T AT08763056 T AT 08763056T AT 08763056 T AT08763056 T AT 08763056T AT E516617 T1 ATE516617 T1 AT E516617T1
- Authority
- AT
- Austria
- Prior art keywords
- laser sensor
- self
- detection range
- laser
- increased detection
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02092—Self-mixing interferometers, i.e. feedback of light from object into laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0028—Laser diodes used as detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Semiconductor Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07107653 | 2007-05-07 | ||
PCT/IB2008/051648 WO2008135903A2 (en) | 2007-05-07 | 2008-04-29 | Laser sensor for self-mixing interferometry with increased detection range |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE516617T1 true ATE516617T1 (de) | 2011-07-15 |
Family
ID=39944081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08763056T ATE516617T1 (de) | 2007-05-07 | 2008-04-29 | Lasersensor für selbstmischende interferometrie mit erhöhtem nachweisbereich |
Country Status (6)
Country | Link |
---|---|
US (2) | US9397476B2 (de) |
EP (1) | EP2147489B1 (de) |
JP (1) | JP5685438B2 (de) |
CN (2) | CN103840369B (de) |
AT (1) | ATE516617T1 (de) |
WO (1) | WO2008135903A2 (de) |
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KR101303371B1 (ko) * | 2005-08-30 | 2013-09-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 소정 범위의 속도들에 걸친 객체와 광 입력 장치의 상대이동을 측정하는 방법 |
DE102007012224A1 (de) * | 2007-03-12 | 2008-09-25 | Schleifring Und Apparatebau Gmbh | Mehrkanalige reflexionsarme optische Drehkupplung |
WO2009001283A2 (en) * | 2007-06-27 | 2008-12-31 | Koninklijke Philips Electronics N.V. | Optical sensor module and its manufacture |
JP2011517362A (ja) * | 2008-02-28 | 2011-06-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光センサ |
US8134715B2 (en) * | 2008-05-20 | 2012-03-13 | Iphoton Solutions, Llc | Adjustable interferometer for laser ultrasonic measurement |
DE102009026632A1 (de) * | 2008-06-06 | 2009-12-10 | Schleifring Und Apparatebau Gmbh | Linsenanordnung mit Lagejustierung |
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US8665450B2 (en) * | 2009-10-02 | 2014-03-04 | Axsun Technologies, Inc. | Integrated dual swept source for OCT medical imaging |
US8687666B2 (en) | 2010-12-28 | 2014-04-01 | Axsun Technologies, Inc. | Integrated dual swept source for OCT medical imaging |
EP2932568B1 (de) * | 2012-12-11 | 2021-10-27 | Koninklijke Philips N.V. | Optisch gepumpte festkörperlaservorrichtung mit selbstausrichtender pumpenoptik und erhöhter verstärkung |
US9360298B2 (en) * | 2013-06-27 | 2016-06-07 | Canon Kabushiki Kaisha | Surface emitting laser and optical coherence tomography measuring apparatus using the surface emitting laser |
EP2963744B1 (de) * | 2014-06-30 | 2019-04-03 | Canon Kabushiki Kaisha | Oberflächenemissionslaser und vorrichtung zur optischen kohärenztomografie damit |
US11006828B2 (en) | 2014-07-17 | 2021-05-18 | 1 Sonic Medical Corporation, S.A.S. | Measurement of ocular parameters using vibrations induced in the eye |
FR3025948B1 (fr) * | 2014-09-15 | 2018-03-16 | Centre National De La Recherche Scientifique (Cnrs) | Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz |
EP3054280A1 (de) * | 2015-02-04 | 2016-08-10 | Axetris AG | Optisches Messgerät und Verfahren zur Gasdetektion |
US10288482B2 (en) * | 2015-03-10 | 2019-05-14 | National Technology & Engineering Solutions Of Sandia, Llc | Extended cavity laser absorption spectroscopy |
DE102015003356B4 (de) | 2015-03-14 | 2017-11-09 | Technische Universität Dresden | Laser mit einem Dünnschichtaktuaktor im Resonator |
CN110168823B (zh) * | 2016-06-13 | 2022-04-26 | 维克萨股份有限公司 | 改进的利用滤光器的自混合模块 |
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CN111279220A (zh) * | 2017-08-22 | 2020-06-12 | 李平 | 激光雷达用双轴谐振光束转向镜系统及方法 |
US11894658B2 (en) | 2017-11-29 | 2024-02-06 | Vixar, Inc. | Power monitoring approach for VCSELS and VCSEL arrays |
DE102018109884B4 (de) * | 2018-04-24 | 2023-07-27 | Webasto SE | Sensoranordnung mit Blendenelement und Verfahren zur Herstellung des Blendenelements |
US11303355B2 (en) | 2018-05-30 | 2022-04-12 | Apple Inc. | Optical structures in directional free-space optical communication systems for portable electronic devices |
DE102018119710A1 (de) * | 2018-08-14 | 2020-02-20 | Universität Leipzig | Vorrichtung und verfahren zur bestimmung einer wellenlänge einer strahlung |
US11740071B2 (en) | 2018-12-21 | 2023-08-29 | Apple Inc. | Optical interferometry proximity sensor with temperature variation compensation |
US11774342B2 (en) | 2019-04-05 | 2023-10-03 | Apple Inc. | Particulate matter sensors based on split beam self-mixing interferometry sensors |
US11112235B2 (en) * | 2019-04-05 | 2021-09-07 | Apple Inc. | Handling obstructions and transmission element contamination for self-mixing particulate matter sensors |
US11156456B2 (en) | 2019-05-21 | 2021-10-26 | Apple Inc. | Optical proximity sensor integrated into a camera module for an electronic device |
US11473898B2 (en) | 2019-05-24 | 2022-10-18 | Apple Inc. | Wearable voice-induced vibration or silent gesture sensor |
US11549799B2 (en) * | 2019-07-01 | 2023-01-10 | Apple Inc. | Self-mixing interference device for sensing applications |
US11422638B2 (en) | 2019-07-08 | 2022-08-23 | Apple Inc. | Input devices that use self-mixing interferometry to determine movement within an enclosure |
CN110456366B (zh) * | 2019-07-19 | 2022-01-14 | 华为技术有限公司 | 位置检测设备和终端 |
US11409365B2 (en) * | 2019-09-06 | 2022-08-09 | Apple Inc. | Self-mixing interferometry-based gesture input system including a wearable or handheld device |
US11112233B2 (en) | 2019-09-12 | 2021-09-07 | Apple Inc. | Self-mixing particulate matter sensors using VCSELs with extrinsic photodiodes |
US11692809B2 (en) | 2019-09-18 | 2023-07-04 | Apple Inc. | Self-mixing interferometry-based absolute distance measurement with distance reference |
US11419546B2 (en) | 2019-09-24 | 2022-08-23 | Apple Inc. | Wearable self-mixing interferometry device used to sense physiological conditions |
KR20220010884A (ko) * | 2020-07-20 | 2022-01-27 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
US11874110B2 (en) | 2020-09-25 | 2024-01-16 | Apple Inc. | Self-mixing interferometry device configured for non-reciprocal sensing |
US11460293B2 (en) * | 2020-09-25 | 2022-10-04 | Apple Inc. | Surface quality sensing using self-mixing interferometry |
CN113192339A (zh) * | 2021-02-01 | 2021-07-30 | 深圳市沛元科技有限公司 | 一种道路作业安全防护警示系统 |
US11629948B2 (en) | 2021-02-04 | 2023-04-18 | Apple Inc. | Optical interferometry proximity sensor with optical path extender |
US11909171B2 (en) | 2021-03-31 | 2024-02-20 | Apple Inc. | Laser-integrated balance detection for self-mixing interferometry |
US11543235B2 (en) * | 2021-03-31 | 2023-01-03 | Apple Inc. | Hybrid interferometric and scatterometric sensing using in-plane sensors |
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JP5497973B2 (ja) | 2005-07-06 | 2014-05-21 | アズビル株式会社 | 状態検出装置 |
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KR20080112419A (ko) | 2006-04-27 | 2008-12-24 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 업컨버전 레이저 시스템 |
-
2008
- 2008-04-29 WO PCT/IB2008/051648 patent/WO2008135903A2/en active Application Filing
- 2008-04-29 AT AT08763056T patent/ATE516617T1/de not_active IP Right Cessation
- 2008-04-29 EP EP08763056A patent/EP2147489B1/de active Active
- 2008-04-29 CN CN201410087470.6A patent/CN103840369B/zh active Active
- 2008-04-29 CN CN200880015273A patent/CN101682169A/zh active Pending
- 2008-04-29 US US12/598,218 patent/US9397476B2/en active Active
- 2008-04-29 JP JP2010507029A patent/JP5685438B2/ja not_active Expired - Fee Related
-
2016
- 2016-06-09 US US15/177,753 patent/US10502547B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101682169A (zh) | 2010-03-24 |
US9397476B2 (en) | 2016-07-19 |
US20160290785A1 (en) | 2016-10-06 |
CN103840369B (zh) | 2019-01-01 |
EP2147489A2 (de) | 2010-01-27 |
WO2008135903A3 (en) | 2009-04-02 |
CN103840369A (zh) | 2014-06-04 |
US20100134803A1 (en) | 2010-06-03 |
WO2008135903A2 (en) | 2008-11-13 |
US10502547B2 (en) | 2019-12-10 |
EP2147489B1 (de) | 2011-07-13 |
JP5685438B2 (ja) | 2015-03-18 |
JP2010526315A (ja) | 2010-07-29 |
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Legal Events
Date | Code | Title | Description |
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |