ATE514799T1 - Verfahren zur reduzierung der porosität einer metallablagerung durch ionenbombardierung - Google Patents

Verfahren zur reduzierung der porosität einer metallablagerung durch ionenbombardierung

Info

Publication number
ATE514799T1
ATE514799T1 AT08835347T AT08835347T ATE514799T1 AT E514799 T1 ATE514799 T1 AT E514799T1 AT 08835347 T AT08835347 T AT 08835347T AT 08835347 T AT08835347 T AT 08835347T AT E514799 T1 ATE514799 T1 AT E514799T1
Authority
AT
Austria
Prior art keywords
porosity
ion
metal deposit
bombardation
reducing
Prior art date
Application number
AT08835347T
Other languages
English (en)
Inventor
Denis Busardo
Original Assignee
Quertech Ingenierie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quertech Ingenierie filed Critical Quertech Ingenierie
Application granted granted Critical
Publication of ATE514799T1 publication Critical patent/ATE514799T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Catalysts (AREA)
  • Glass Compositions (AREA)
AT08835347T 2007-09-11 2008-09-11 Verfahren zur reduzierung der porosität einer metallablagerung durch ionenbombardierung ATE514799T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0706341A FR2920785B1 (fr) 2007-09-11 2007-09-11 Traitement de la porosite des metaux par bombardement ionique
PCT/FR2008/051623 WO2009044083A2 (fr) 2007-09-11 2008-09-11 Procede de reduction de la porosite d'un depot metallique par bombardement ionique

Publications (1)

Publication Number Publication Date
ATE514799T1 true ATE514799T1 (de) 2011-07-15

Family

ID=39364069

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08835347T ATE514799T1 (de) 2007-09-11 2008-09-11 Verfahren zur reduzierung der porosität einer metallablagerung durch ionenbombardierung

Country Status (5)

Country Link
US (1) US20100187445A1 (de)
EP (1) EP2188407B1 (de)
AT (1) ATE514799T1 (de)
FR (1) FR2920785B1 (de)
WO (1) WO2009044083A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939150B1 (fr) * 2008-12-01 2011-10-21 Quertech Ingenierie Procede de traitement d'une partie metallique par un faisceau d'ions
FR2939973B1 (fr) * 2008-12-16 2012-11-23 Quertech Ingenierie Procede de fabrication d'un element de connecteur comprenant un substrat sur lequel est deposee une couche d'or
FR2942801B1 (fr) * 2009-03-05 2012-03-23 Quertech Ingenierie Procede de traitement d'une piece en elastomere par des ions multi-energies he+ et he2+ pour diminuer le frottement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2879625B1 (fr) * 2004-02-04 2007-04-27 Guernalec Frederic Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
EP1595972A1 (de) * 2004-05-10 2005-11-16 Precision Engineering AG Verfahren zum Bearbeiten von metallischen Körpern, insbesondere von Uhrenbestandteilen
FR2899242B1 (fr) * 2007-04-05 2010-10-22 Quertech Ingenierie Procede de durcissement par implantation d'ions d'helium dans une piece metallique
FR2939150B1 (fr) * 2008-12-01 2011-10-21 Quertech Ingenierie Procede de traitement d'une partie metallique par un faisceau d'ions

Also Published As

Publication number Publication date
FR2920785B1 (fr) 2010-02-26
EP2188407A2 (de) 2010-05-26
FR2920785A1 (fr) 2009-03-13
WO2009044083A3 (fr) 2009-07-16
EP2188407B1 (de) 2011-06-29
US20100187445A1 (en) 2010-07-29
WO2009044083A2 (fr) 2009-04-09

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