ATE510303T1 - Verfahren zur herstellung eines halbleiterbauelements mit einer verspannten halbleiterschicht mit bogenstruktur - Google Patents

Verfahren zur herstellung eines halbleiterbauelements mit einer verspannten halbleiterschicht mit bogenstruktur

Info

Publication number
ATE510303T1
ATE510303T1 AT06723827T AT06723827T ATE510303T1 AT E510303 T1 ATE510303 T1 AT E510303T1 AT 06723827 T AT06723827 T AT 06723827T AT 06723827 T AT06723827 T AT 06723827T AT E510303 T1 ATE510303 T1 AT E510303T1
Authority
AT
Austria
Prior art keywords
semiconductor
dielectric layer
local strain
producing
inducing structure
Prior art date
Application number
AT06723827T
Other languages
English (en)
Inventor
Bich-Yen Nguyen
Shawn Thomas
Lubomir Cergel
Mariam Sadaka
Voon-Yew Thean
Peter Wennekers
Ted White
Andreas Wild
Detlev Gruetzmacher
Oliver Schmidt
Original Assignee
Scherrer Inst Paul
Garching Innovations Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scherrer Inst Paul, Garching Innovations Gmbh filed Critical Scherrer Inst Paul
Application granted granted Critical
Publication of ATE510303T1 publication Critical patent/ATE510303T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
AT06723827T 2005-03-30 2006-03-29 Verfahren zur herstellung eines halbleiterbauelements mit einer verspannten halbleiterschicht mit bogenstruktur ATE510303T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/093,645 US20060228872A1 (en) 2005-03-30 2005-03-30 Method of making a semiconductor device having an arched structure strained semiconductor layer
PCT/EP2006/002858 WO2006103055A1 (en) 2005-03-30 2006-03-29 A method of making a semiconductor device having an arched structure strained semiconductor layer

Publications (1)

Publication Number Publication Date
ATE510303T1 true ATE510303T1 (de) 2011-06-15

Family

ID=36677252

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06723827T ATE510303T1 (de) 2005-03-30 2006-03-29 Verfahren zur herstellung eines halbleiterbauelements mit einer verspannten halbleiterschicht mit bogenstruktur

Country Status (4)

Country Link
US (1) US20060228872A1 (de)
EP (1) EP1872410B1 (de)
AT (1) ATE510303T1 (de)
WO (1) WO2006103055A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415718B2 (en) 2009-10-30 2013-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming epi film in substrate trench

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
AU623861B2 (en) * 1987-08-08 1992-05-28 Canon Kabushiki Kaisha Crystal article, method for producing the same and semiconductor device utilizing the same
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
JP4074051B2 (ja) * 1999-08-31 2008-04-09 株式会社東芝 半導体基板およびその製造方法
DE10025264A1 (de) * 2000-05-22 2001-11-29 Max Planck Gesellschaft Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung
EP2267762A3 (de) * 2002-08-23 2012-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiter-Heterostrukturen mit reduzierter Anhäufung von Versetzungen und entsprechende Herstellungsverfahren
US6720619B1 (en) * 2002-12-13 2004-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices
US6867433B2 (en) * 2003-04-30 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
US6835618B1 (en) * 2003-08-05 2004-12-28 Advanced Micro Devices, Inc. Epitaxially grown fin for FinFET
JP4004448B2 (ja) * 2003-09-24 2007-11-07 富士通株式会社 半導体装置およびその製造方法
JP2005210062A (ja) * 2003-12-26 2005-08-04 Canon Inc 半導体部材とその製造方法、及び半導体装置
US7118995B2 (en) * 2004-05-19 2006-10-10 International Business Machines Corporation Yield improvement in silicon-germanium epitaxial growth
KR100654339B1 (ko) * 2004-08-27 2006-12-08 삼성전자주식회사 비휘발성 반도체 소자 및 그 제조 방법

Also Published As

Publication number Publication date
WO2006103055A1 (en) 2006-10-05
EP1872410B1 (de) 2011-05-18
EP1872410A1 (de) 2008-01-02
US20060228872A1 (en) 2006-10-12

Similar Documents

Publication Publication Date Title
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
GB2467935B (en) Formation of thin layers of GaAs and germanium materials
FR2984599B1 (fr) Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice
TW200735348A (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2008019349A3 (en) Thin film solar cell with finger pattern
ATE484609T1 (de) Verfahren zur herstellung einer funktionsschicht
WO2006036297A3 (en) Organic electroluminescence device and method of production of same
EP1976000A3 (de) Herstellungsverfahren für Halbleitervorrichtung
WO2007080535A3 (en) Scintillation element, scintillation array and method for producing the same
MY149108A (en) Pre-molded clip structure
EP4293707A3 (de) Direkte und sequenzielle bildung von monoschichten aus bornitrid und graphen auf substraten
SG134290A1 (en) Semiconductor layer structure and method for fabricating a semiconductor layer structure
TW200625529A (en) Contact hole structures and contact structures and fabrication methods thereof
GB0815287D0 (en) Organic electronic devices and methods of making the same using solution processing techniques
TW200737409A (en) Semiconductor device and process for producing the same
FR2967813B1 (fr) Procédé de réalisation d'une structure a couche métallique enterrée
GB2534675A8 (en) Compound semiconductor device structures comprising polycrystalline CVD diamond
WO2007003826A3 (fr) Procede de realisation de nanostructures
TW201130046A (en) Semiconductor device and process for production of semiconductor device
EP2208518A3 (de) Gamepadhülle
TW200943416A (en) Semiconductor structure and method of manufacture
WO2009108781A3 (en) Method of forming an embedded silicon carbon epitaxial layer
WO2012067444A3 (ko) 산화막이 형성된 도전성 필름 및 그 제조방법
ATE389948T1 (de) Verfahren zur herstellung einer halbleitervorrichtung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties