ATE508482T1 - Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts - Google Patents

Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts

Info

Publication number
ATE508482T1
ATE508482T1 AT02762793T AT02762793T ATE508482T1 AT E508482 T1 ATE508482 T1 AT E508482T1 AT 02762793 T AT02762793 T AT 02762793T AT 02762793 T AT02762793 T AT 02762793T AT E508482 T1 ATE508482 T1 AT E508482T1
Authority
AT
Austria
Prior art keywords
high temperature
josephson contact
temperature superconducting
producing
electronic component
Prior art date
Application number
AT02762793T
Other languages
English (en)
Inventor
Seiji Adachi
Hironori Wakana
Keiichi Tanabe
Original Assignee
Int Superconductivity Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001251137A external-priority patent/JP2003069094A/ja
Priority claimed from JP2002064448A external-priority patent/JP2003264319A/ja
Application filed by Int Superconductivity Tech filed Critical Int Superconductivity Tech
Application granted granted Critical
Publication of ATE508482T1 publication Critical patent/ATE508482T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
AT02762793T 2001-08-22 2002-08-16 Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts ATE508482T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001251137A JP2003069094A (ja) 2001-08-22 2001-08-22 ランプエッジ型ジョセフソン接合素子及びその製造方法
JP2002064448A JP2003264319A (ja) 2002-03-08 2002-03-08 高温超電導ジョセフソン接合及びそれを備えた超電導電子デバイス
PCT/JP2002/008320 WO2003019684A1 (fr) 2001-08-22 2002-08-16 Jonction josephson de supraconducteurs haute temperature, procede de fabrication associe et dispositif electronique supraconducteur comprenant ladite jonction

Publications (1)

Publication Number Publication Date
ATE508482T1 true ATE508482T1 (de) 2011-05-15

Family

ID=26620766

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02762793T ATE508482T1 (de) 2001-08-22 2002-08-16 Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts

Country Status (7)

Country Link
US (1) US6999806B2 (de)
EP (1) EP1420464B8 (de)
KR (1) KR20040032093A (de)
CN (1) CN1488174A (de)
AT (1) ATE508482T1 (de)
DE (1) DE60239941D1 (de)
WO (1) WO2003019684A1 (de)

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JP2004071923A (ja) * 2002-08-08 2004-03-04 Fujitsu Ltd 高温超電導装置
JP2004303820A (ja) * 2003-03-28 2004-10-28 Fujitsu Ltd 超伝導回路
JP2004296969A (ja) * 2003-03-28 2004-10-21 Fujitsu Ltd 高温超電導装置及びその製造方法
US7286032B2 (en) * 2003-07-10 2007-10-23 Superpower, Inc. Rare-earth-Ba-Cu-O superconductors and methods of making same
JP5289673B2 (ja) * 2005-10-21 2013-09-11 中国電力株式会社 超電導接合素子および超電導接合回路
US8032196B2 (en) * 2006-08-23 2011-10-04 Chugoku Electric Power Co., Inc. Josephson device, method of forming Josephson device and superconductor circuit
US20080146449A1 (en) * 2006-12-14 2008-06-19 Jerome Lesueur Electrical device and method of manufacturing same
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
EP3422412A3 (de) * 2009-02-27 2019-05-01 D-Wave Systems Inc. Supraleitende integrierte schaltung
US8301214B1 (en) * 2010-01-08 2012-10-30 Hypres, Inc. System and method for providing multi-conductive layer metallic interconnects for superconducting integrated circuits
CN102437281A (zh) * 2011-12-08 2012-05-02 南京大学 一种超导隧道结及其制备方法
US9768371B2 (en) 2012-03-08 2017-09-19 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
WO2013149607A1 (de) * 2012-04-04 2013-10-10 Forschungszentrum Jülich GmbH Reproduzierbarerer stufen-josephson-kontakt
CN104377299B (zh) * 2014-08-21 2017-09-26 中国科学院上海微系统与信息技术研究所 无磁屏蔽环境下抑制磁场干扰的squid器件的结构
TWI685012B (zh) * 2014-12-22 2020-02-11 美商卡爾蔡司顯微鏡有限責任公司 帶電粒子束系統、用以處理樣品的方法、用以製造約瑟夫接面的方法與用以產生複數個約瑟夫接面的方法
CN105428517B (zh) * 2015-11-06 2018-05-25 中国科学院上海微系统与信息技术研究所 一种双通道超导连接及其制备方法
AU2017238752B2 (en) * 2016-03-23 2020-10-08 Unisa Femtosecond laser based method for fabrication of micro- and nano-constriction type structures on a YBA2CU3O7-X superconducting thin film
FR3051603B1 (fr) * 2016-05-20 2018-11-23 Thales Dispositif comprenant une jonction josephson
WO2018013436A1 (en) * 2016-07-11 2018-01-18 Ambature, Inc. Improved josephson junction using molecular beam epitaxy
CN109690797B (zh) * 2016-08-30 2024-01-09 休斯敦系统大学 高性能超导体带材的质量控制
WO2018144601A1 (en) 2017-02-01 2018-08-09 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
WO2020077416A1 (en) * 2018-10-19 2020-04-23 Commonwealth Scientific And Industrial Research Organisation Multiple step edge fabrication
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
US12102017B2 (en) 2019-02-15 2024-09-24 D-Wave Systems Inc. Kinetic inductance for couplers and compact qubits
JP7705393B2 (ja) 2019-12-05 2025-07-09 ディー－ウェイブ システムズ インコーポレイテッド 超伝導集積回路を製造するためのシステム及び方法
WO2021231224A1 (en) 2020-05-11 2021-11-18 D-Wave Systems Inc. Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same
CN114709327A (zh) * 2020-08-06 2022-07-05 阿里巴巴集团控股有限公司 约瑟夫森结、约瑟夫森结的制备方法、装置及超导电路
CN113239548B (zh) * 2021-05-18 2022-03-15 北京理工大学 一种基于高温超导约瑟夫森结的混频建模方法
US12392823B2 (en) 2021-11-05 2025-08-19 D-Wave Systems Inc. Systems and methods for on-chip noise measurements
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Also Published As

Publication number Publication date
EP1420464A4 (de) 2009-08-05
EP1420464B1 (de) 2011-05-04
EP1420464B8 (de) 2011-09-14
EP1420464A1 (de) 2004-05-19
CN1488174A (zh) 2004-04-07
WO2003019684A1 (fr) 2003-03-06
KR20040032093A (ko) 2004-04-14
US6999806B2 (en) 2006-02-14
DE60239941D1 (de) 2011-06-16
US20040077504A1 (en) 2004-04-22

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