ATE508482T1 - Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts - Google Patents

Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts

Info

Publication number
ATE508482T1
ATE508482T1 AT02762793T AT02762793T ATE508482T1 AT E508482 T1 ATE508482 T1 AT E508482T1 AT 02762793 T AT02762793 T AT 02762793T AT 02762793 T AT02762793 T AT 02762793T AT E508482 T1 ATE508482 T1 AT E508482T1
Authority
AT
Austria
Prior art keywords
high temperature
josephson contact
temperature superconducting
producing
electronic component
Prior art date
Application number
AT02762793T
Other languages
English (en)
Inventor
Seiji Adachi
Hironori Wakana
Keiichi Tanabe
Original Assignee
Int Superconductivity Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001251137A external-priority patent/JP2003069094A/ja
Priority claimed from JP2002064448A external-priority patent/JP2003264319A/ja
Application filed by Int Superconductivity Tech filed Critical Int Superconductivity Tech
Application granted granted Critical
Publication of ATE508482T1 publication Critical patent/ATE508482T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
AT02762793T 2001-08-22 2002-08-16 Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts ATE508482T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001251137A JP2003069094A (ja) 2001-08-22 2001-08-22 ランプエッジ型ジョセフソン接合素子及びその製造方法
JP2002064448A JP2003264319A (ja) 2002-03-08 2002-03-08 高温超電導ジョセフソン接合及びそれを備えた超電導電子デバイス
PCT/JP2002/008320 WO2003019684A1 (fr) 2001-08-22 2002-08-16 Jonction josephson de supraconducteurs haute temperature, procede de fabrication associe et dispositif electronique supraconducteur comprenant ladite jonction

Publications (1)

Publication Number Publication Date
ATE508482T1 true ATE508482T1 (de) 2011-05-15

Family

ID=26620766

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02762793T ATE508482T1 (de) 2001-08-22 2002-08-16 Hochtemperatursupraleitender josephson-kontakt, supraleitendes elektronisches bauelement damit und verfahren zur herstellung des hochtemperatursupraleitenden josephson-kontakts

Country Status (7)

Country Link
US (1) US6999806B2 (de)
EP (1) EP1420464B8 (de)
KR (1) KR20040032093A (de)
CN (1) CN1488174A (de)
AT (1) ATE508482T1 (de)
DE (1) DE60239941D1 (de)
WO (1) WO2003019684A1 (de)

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JP2003059352A (ja) * 2001-08-22 2003-02-28 Internatl Superconductivity Technology Center 表面が平坦な高温超電導体膜
JP2004071923A (ja) * 2002-08-08 2004-03-04 Fujitsu Ltd 高温超電導装置
JP2004296969A (ja) * 2003-03-28 2004-10-21 Fujitsu Ltd 高温超電導装置及びその製造方法
JP2004303820A (ja) * 2003-03-28 2004-10-28 Fujitsu Ltd 超伝導回路
US7286032B2 (en) * 2003-07-10 2007-10-23 Superpower, Inc. Rare-earth-Ba-Cu-O superconductors and methods of making same
JP5289673B2 (ja) * 2005-10-21 2013-09-11 中国電力株式会社 超電導接合素子および超電導接合回路
US8032196B2 (en) * 2006-08-23 2011-10-04 Chugoku Electric Power Co., Inc. Josephson device, method of forming Josephson device and superconductor circuit
US20080146449A1 (en) * 2006-12-14 2008-06-19 Jerome Lesueur Electrical device and method of manufacturing same
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
US8951808B2 (en) * 2009-02-27 2015-02-10 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
US8301214B1 (en) * 2010-01-08 2012-10-30 Hypres, Inc. System and method for providing multi-conductive layer metallic interconnects for superconducting integrated circuits
CN102437281A (zh) * 2011-12-08 2012-05-02 南京大学 一种超导隧道结及其制备方法
JP6326379B2 (ja) 2012-03-08 2018-05-16 ディー−ウェイブ システムズ，インコーポレイテッド 超伝導集積回路の製作のためのシステムおよび方法
CN104350623B (zh) * 2012-04-04 2017-02-22 于利奇研究中心有限公司 具有约瑟夫森触点的组件及其制造方法
CN104377299B (zh) * 2014-08-21 2017-09-26 中国科学院上海微系统与信息技术研究所 无磁屏蔽环境下抑制磁场干扰的squid器件的结构
US10410828B2 (en) * 2014-12-22 2019-09-10 Carl Zeiss Microscopy, Llc Charged particle beam system and methods
CN105428517B (zh) * 2015-11-06 2018-05-25 中国科学院上海微系统与信息技术研究所 一种双通道超导连接及其制备方法
CN109362239B (zh) * 2016-03-23 2022-10-21 南非大学 基于飞秒激光的超导薄膜上制备微纳米收缩结构的方法
FR3051603B1 (fr) * 2016-05-20 2018-11-23 Thales Dispositif comprenant une jonction josephson
WO2018013436A1 (en) * 2016-07-11 2018-01-18 Ambature, Inc. Improved josephson junction using molecular beam epitaxy
EP3764411B1 (de) * 2016-08-30 2024-02-14 University of Houston System Qualitätskontrolle von hochleistungsfähigen supraleitenden bändern
EP4443484A3 (de) 2017-02-01 2025-01-08 D-Wave Systems Inc. Systeme und verfahren zur herstellung von supraleitenden integrierten schaltungen
CA3116074A1 (en) * 2018-10-19 2020-04-23 Commonwealth Scientific And Industrial Research Organisation Multiple step edge fabrication
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
US12102017B2 (en) 2019-02-15 2024-09-24 D-Wave Systems Inc. Kinetic inductance for couplers and compact qubits
CN115004393B (zh) 2019-12-05 2025-11-04 D-波系统公司 用于制造超导集成电路的系统和方法
US12376501B2 (en) 2020-05-11 2025-07-29 1372934 B.C. Ltd. Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same
CN113517386B (zh) * 2020-08-06 2022-05-31 阿里巴巴集团控股有限公司 约瑟夫森结、约瑟夫森结的制备方法、装置及超导电路
CN113239548B (zh) * 2021-05-18 2022-03-15 北京理工大学 一种基于高温超导约瑟夫森结的混频建模方法
US12392823B2 (en) 2021-11-05 2025-08-19 D-Wave Systems Inc. Systems and methods for on-chip noise measurements
CN119811780B (zh) * 2025-02-20 2025-12-05 松山湖材料实验室 一种Lu掺杂高温超导原材料及其制备方法和用途

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Also Published As

Publication number Publication date
CN1488174A (zh) 2004-04-07
US6999806B2 (en) 2006-02-14
EP1420464B1 (de) 2011-05-04
EP1420464A4 (de) 2009-08-05
US20040077504A1 (en) 2004-04-22
WO2003019684A1 (fr) 2003-03-06
KR20040032093A (ko) 2004-04-14
DE60239941D1 (de) 2011-06-16
EP1420464B8 (de) 2011-09-14
EP1420464A1 (de) 2004-05-19

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