ATE497637T1 - Halbleiterbauelement mit einem bipolaren transistor und herstellungsverfahren dafür - Google Patents
Halbleiterbauelement mit einem bipolaren transistor und herstellungsverfahren dafürInfo
- Publication number
- ATE497637T1 ATE497637T1 AT06821136T AT06821136T ATE497637T1 AT E497637 T1 ATE497637 T1 AT E497637T1 AT 06821136 T AT06821136 T AT 06821136T AT 06821136 T AT06821136 T AT 06821136T AT E497637 T1 ATE497637 T1 AT E497637T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- silicon
- bipolar transistor
- emitter region
- production method
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05109046 | 2005-09-30 | ||
| PCT/IB2006/053446 WO2007036861A2 (en) | 2005-09-30 | 2006-09-22 | Semiconductor device with a bipolar transistor and method of manufacturing such a device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE497637T1 true ATE497637T1 (de) | 2011-02-15 |
Family
ID=37900152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06821136T ATE497637T1 (de) | 2005-09-30 | 2006-09-22 | Halbleiterbauelement mit einem bipolaren transistor und herstellungsverfahren dafür |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7939854B2 (de) |
| EP (1) | EP1935023B1 (de) |
| JP (1) | JP2009510755A (de) |
| CN (1) | CN100583447C (de) |
| AT (1) | ATE497637T1 (de) |
| DE (1) | DE602006019972D1 (de) |
| TW (1) | TW200721483A (de) |
| WO (1) | WO2007036861A2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459076B (zh) * | 2007-12-13 | 2011-02-02 | 上海华虹Nec电子有限公司 | SiGe HBT晶体管的制备方法 |
| CN103137678B (zh) * | 2011-11-30 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极晶体管及制造方法 |
| CN103137673B (zh) * | 2011-11-30 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 自对准双极晶体管及其制造方法 |
| US9887278B2 (en) * | 2015-09-28 | 2018-02-06 | International Business Machines Corporation | Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base |
| CN109887843B (zh) * | 2019-01-31 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | 采用非选择性外延的自对准锗硅hbt器件的制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3658745B2 (ja) * | 1998-08-19 | 2005-06-08 | 株式会社ルネサステクノロジ | バイポーラトランジスタ |
| DE10002364A1 (de) * | 2000-01-20 | 2001-08-02 | Infineon Technologies Ag | Silizium-Germanium-Bipolartranistor mit optimiertem Germaniumprofil |
| US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
| JP2004538645A (ja) * | 2001-08-06 | 2004-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | バイポーラトランジスタ、半導体デバイス、及びその製造方法 |
| JP2006179507A (ja) * | 2003-02-26 | 2006-07-06 | Matsushita Electric Ind Co Ltd | 半導体装置 |
-
2006
- 2006-09-22 US US12/088,719 patent/US7939854B2/en active Active
- 2006-09-22 AT AT06821136T patent/ATE497637T1/de not_active IP Right Cessation
- 2006-09-22 CN CN200680036092A patent/CN100583447C/zh active Active
- 2006-09-22 WO PCT/IB2006/053446 patent/WO2007036861A2/en active Application Filing
- 2006-09-22 EP EP06821136A patent/EP1935023B1/de active Active
- 2006-09-22 DE DE602006019972T patent/DE602006019972D1/de active Active
- 2006-09-22 JP JP2008532940A patent/JP2009510755A/ja not_active Withdrawn
- 2006-09-27 TW TW095135698A patent/TW200721483A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200721483A (en) | 2007-06-01 |
| EP1935023A2 (de) | 2008-06-25 |
| WO2007036861A3 (en) | 2007-09-27 |
| DE602006019972D1 (de) | 2011-03-17 |
| JP2009510755A (ja) | 2009-03-12 |
| US20080203434A1 (en) | 2008-08-28 |
| EP1935023B1 (de) | 2011-02-02 |
| CN101278402A (zh) | 2008-10-01 |
| WO2007036861A2 (en) | 2007-04-05 |
| CN100583447C (zh) | 2010-01-20 |
| US7939854B2 (en) | 2011-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |