ATE497637T1 - SEMICONDUCTOR COMPONENT HAVING A BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF - Google Patents

SEMICONDUCTOR COMPONENT HAVING A BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF

Info

Publication number
ATE497637T1
ATE497637T1 AT06821136T AT06821136T ATE497637T1 AT E497637 T1 ATE497637 T1 AT E497637T1 AT 06821136 T AT06821136 T AT 06821136T AT 06821136 T AT06821136 T AT 06821136T AT E497637 T1 ATE497637 T1 AT E497637T1
Authority
AT
Austria
Prior art keywords
region
silicon
bipolar transistor
emitter region
production method
Prior art date
Application number
AT06821136T
Other languages
German (de)
Inventor
Philippe Meunier-Beillard
Raymond Duffy
Prabhat Agarwal
Godefridus Hurkx
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE497637T1 publication Critical patent/ATE497637T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region which are respectively of the N-type conductivity, the P-type conductivity and the N-type conductivity by the provision of suitable doping atoms, wherein the base region comprises a mixed crystal of silicon and germanium, the base region is separated from the emitter region by an intermediate region of silicon having a doping concentration which is lower than the doping concentration of the emitter region and with a thickness smaller than the thickness of the emitter region, and the emitter region comprises a sub-region comprising a mixed crystal of silicon and germanium which is positioned at the side of emitter region remote from the intermediate region.
AT06821136T 2005-09-30 2006-09-22 SEMICONDUCTOR COMPONENT HAVING A BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF ATE497637T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05109046 2005-09-30
PCT/IB2006/053446 WO2007036861A2 (en) 2005-09-30 2006-09-22 Semiconductor device with a bipolar transistor and method of manufacturing such a device

Publications (1)

Publication Number Publication Date
ATE497637T1 true ATE497637T1 (en) 2011-02-15

Family

ID=37900152

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06821136T ATE497637T1 (en) 2005-09-30 2006-09-22 SEMICONDUCTOR COMPONENT HAVING A BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREOF

Country Status (8)

Country Link
US (1) US7939854B2 (en)
EP (1) EP1935023B1 (en)
JP (1) JP2009510755A (en)
CN (1) CN100583447C (en)
AT (1) ATE497637T1 (en)
DE (1) DE602006019972D1 (en)
TW (1) TW200721483A (en)
WO (1) WO2007036861A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101459076B (en) * 2007-12-13 2011-02-02 上海华虹Nec电子有限公司 Preparation for SiGe HBT transistor
CN103137678B (en) * 2011-11-30 2015-08-19 上海华虹宏力半导体制造有限公司 Ge-Si heterojunction bipolar transistor and manufacture method
CN103137673B (en) * 2011-11-30 2015-06-03 上海华虹宏力半导体制造有限公司 Self-alignment bipolar transistor and manufacturing method thereof
US9887278B2 (en) * 2015-09-28 2018-02-06 International Business Machines Corporation Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
CN109887843B (en) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 Method for manufacturing self-aligned germanium-silicon HBT (heterojunction bipolar transistor) device by adopting non-selective epitaxy

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3658745B2 (en) * 1998-08-19 2005-06-08 株式会社ルネサステクノロジ Bipolar transistor
DE10002364A1 (en) * 2000-01-20 2001-08-02 Infineon Technologies Ag Silicon germanium bipolar transistor with optimized germanium profile
US6649482B1 (en) * 2001-06-15 2003-11-18 National Semiconductor Corporation Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor
ATE411616T1 (en) * 2001-08-06 2008-10-15 Nxp Bv BIPOLAR TRANSISTOR, SEMICONDUCTOR COMPONENT AND RELATED PRODUCTION METHOD
JP2006179507A (en) * 2003-02-26 2006-07-06 Matsushita Electric Ind Co Ltd Semiconductor device

Also Published As

Publication number Publication date
TW200721483A (en) 2007-06-01
US20080203434A1 (en) 2008-08-28
EP1935023A2 (en) 2008-06-25
WO2007036861A3 (en) 2007-09-27
CN100583447C (en) 2010-01-20
US7939854B2 (en) 2011-05-10
CN101278402A (en) 2008-10-01
WO2007036861A2 (en) 2007-04-05
EP1935023B1 (en) 2011-02-02
DE602006019972D1 (en) 2011-03-17
JP2009510755A (en) 2009-03-12

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Legal Events

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