ATE492884T1 - Verfahren und vorrichtung zur messung von strom wie bei einer speicherzelle - Google Patents

Verfahren und vorrichtung zur messung von strom wie bei einer speicherzelle

Info

Publication number
ATE492884T1
ATE492884T1 AT08167579T AT08167579T ATE492884T1 AT E492884 T1 ATE492884 T1 AT E492884T1 AT 08167579 T AT08167579 T AT 08167579T AT 08167579 T AT08167579 T AT 08167579T AT E492884 T1 ATE492884 T1 AT E492884T1
Authority
AT
Austria
Prior art keywords
current
capacitor
clocked
counter
magnitude
Prior art date
Application number
AT08167579T
Other languages
English (en)
Inventor
R Jacob Baker
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE492884T1 publication Critical patent/ATE492884T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1697—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/061—Sense amplifier enabled by a address transition detection related control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08167579T 2003-06-10 2004-06-09 Verfahren und vorrichtung zur messung von strom wie bei einer speicherzelle ATE492884T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/457,366 US6795359B1 (en) 2003-06-10 2003-06-10 Methods and apparatus for measuring current as in sensing a memory cell

Publications (1)

Publication Number Publication Date
ATE492884T1 true ATE492884T1 (de) 2011-01-15

Family

ID=32990951

Family Applications (2)

Application Number Title Priority Date Filing Date
AT08167579T ATE492884T1 (de) 2003-06-10 2004-06-09 Verfahren und vorrichtung zur messung von strom wie bei einer speicherzelle
AT04754483T ATE419626T1 (de) 2003-06-10 2004-06-09 Vorrichtung zur strommessung beim lesen einer speicherzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04754483T ATE419626T1 (de) 2003-06-10 2004-06-09 Vorrichtung zur strommessung beim lesen einer speicherzelle

Country Status (8)

Country Link
US (2) US6795359B1 (de)
EP (2) EP2045817B1 (de)
JP (1) JP4278687B2 (de)
KR (1) KR100656066B1 (de)
CN (1) CN100466108C (de)
AT (2) ATE492884T1 (de)
DE (2) DE602004030733D1 (de)
WO (1) WO2004112049A1 (de)

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US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell
US7042783B2 (en) * 2003-06-18 2006-05-09 Hewlett-Packard Development Company, L.P. Magnetic memory
US7123530B2 (en) * 2003-10-09 2006-10-17 Micron Technology, Inc. AC sensing for a resistive memory
US7428163B2 (en) * 2006-07-21 2008-09-23 Infineon Technologies Ag Method and memory circuit for operating a resistive memory cell
EP1881503A1 (de) * 2006-07-21 2008-01-23 Qimonda AG Verfahren und Speicherschaltung zum Betreiben einer Widerstandsspeicherzelle
US7397689B2 (en) * 2006-08-09 2008-07-08 Micron Technology, Inc. Resistive memory device
EP2089887B1 (de) 2006-11-08 2015-12-23 Nxp B.V. Leseerweiterung für speicher
US8054299B2 (en) * 2007-01-08 2011-11-08 Apple Inc. Digital controller for a true multi-point touch surface useable in a computer system
US8117520B2 (en) 2007-06-15 2012-02-14 Micron Technology, Inc. Error detection for multi-bit memory
US7818638B2 (en) 2007-06-15 2010-10-19 Micron Technology, Inc. Systems and devices including memory with built-in self test and methods of making and using the same
US7817073B2 (en) 2007-06-15 2010-10-19 Micron Technology, Inc. Integrators for delta-sigma modulators
US7830729B2 (en) 2007-06-15 2010-11-09 Micron Technology, Inc. Digital filters with memory
US7667632B2 (en) 2007-06-15 2010-02-23 Micron Technology, Inc. Quantizing circuits for semiconductor devices
US8068367B2 (en) 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
US7538702B2 (en) 2007-06-15 2009-05-26 Micron Technology, Inc. Quantizing circuits with variable parameters
US9135962B2 (en) 2007-06-15 2015-09-15 Micron Technology, Inc. Comparators for delta-sigma modulators
US7839703B2 (en) 2007-06-15 2010-11-23 Micron Technology, Inc. Subtraction circuits and digital-to-analog converters for semiconductor devices
US7969783B2 (en) * 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
US7768868B2 (en) 2007-06-15 2010-08-03 Micron Technology, Inc. Digital filters for semiconductor devices
US7733262B2 (en) 2007-06-15 2010-06-08 Micron Technology, Inc. Quantizing circuits with variable reference signals
CN101414819B (zh) * 2007-10-16 2010-09-08 通泰积体电路股份有限公司 电流源控制及补偿触控电容感测方法及其装置
US7864609B2 (en) 2008-06-30 2011-01-04 Micron Technology, Inc. Methods for determining resistance of phase change memory elements
US8581595B2 (en) * 2008-08-15 2013-11-12 Spansion Llc Method of measuring flash memory cell current
KR101216393B1 (ko) * 2010-05-13 2012-12-28 주식회사 실리콘웍스 터치스크린의 정전용량 측정회로 및 방법
AT511664B1 (de) * 2012-10-17 2016-01-15 Avl List Gmbh Digitaler Ladungsverstärker
CN103871481B (zh) * 2012-12-12 2016-11-02 上海华虹宏力半导体制造有限公司 用于非挥发性存储器的逻辑控制器
US9330756B2 (en) * 2014-08-13 2016-05-03 Micron Technology, Inc. Apparatuses and methods for sensing using an integration component
US9786346B2 (en) 2015-05-20 2017-10-10 Micron Technology, Inc. Virtual ground sensing circuitry and related devices, systems, and methods for crosspoint ferroelectric memory
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US9530513B1 (en) 2015-11-25 2016-12-27 Intel Corporation Methods and apparatus to read memory cells based on clock pulse counts
KR102431206B1 (ko) * 2015-12-23 2022-08-11 에스케이하이닉스 주식회사 전자 장치
US9508399B1 (en) * 2016-05-03 2016-11-29 HGST Netherlands B.V. Residual capacitance performance booster
US9799381B1 (en) * 2016-09-28 2017-10-24 Intel Corporation Double-polarity memory read
US10290327B2 (en) * 2017-10-13 2019-05-14 Nantero, Inc. Devices and methods for accessing resistive change elements in resistive change element arrays
CN110890121B (zh) * 2018-09-07 2021-10-22 合肥沛睿微电子股份有限公司 储存装置及其nand快闪记忆体控制器
CN111351973B (zh) * 2018-12-20 2023-07-28 Qorvo美国公司 电流测量电路

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FR2453471A1 (fr) * 1979-04-06 1980-10-31 Inst Francais Du Petrole Echantillonneur-bloqueur perfectionne
US4285051A (en) * 1980-02-29 1981-08-18 Precision Monolithics, Inc. Low glitch current switch
US4783602A (en) * 1987-06-26 1988-11-08 American Telephone And Telegraph Company, At&T Bell Laboratories Operational transconductance amplifier for use in sample-and-hold circuits and the like
DE3739208A1 (de) * 1987-11-19 1989-06-01 Siemens Ag Analog-digital-umsetzer
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.
US5457035A (en) * 1993-07-23 1995-10-10 Immunex Corporation Cytokine which is a ligand for OX40
CN1202703A (zh) * 1997-06-17 1998-12-23 合泰半导体股份有限公司 电可擦除可编程存储器的感测电路
US6160851A (en) * 1998-02-26 2000-12-12 National Semiconductor Corporation Line driver calibration circuit
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
JP3985432B2 (ja) * 2000-06-19 2007-10-03 日本電気株式会社 磁気ランダムアクセスメモリ
CN1385858A (zh) * 2001-05-10 2002-12-18 旺宏电子股份有限公司 非挥发性铁电内存感测方法
US6504750B1 (en) * 2001-08-27 2003-01-07 Micron Technology, Inc. Resistive memory element sensing using averaging
US6597598B1 (en) * 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell

Also Published As

Publication number Publication date
US20050002249A1 (en) 2005-01-06
JP2007503680A (ja) 2007-02-22
CN100466108C (zh) 2009-03-04
EP1634301B1 (de) 2008-12-31
DE602004030733D1 (de) 2011-02-03
JP4278687B2 (ja) 2009-06-17
WO2004112049A1 (en) 2004-12-23
DE602004018770D1 (de) 2009-02-12
EP2045817A1 (de) 2009-04-08
ATE419626T1 (de) 2009-01-15
KR20060024408A (ko) 2006-03-16
EP1634301A1 (de) 2006-03-15
US6795359B1 (en) 2004-09-21
US6930942B2 (en) 2005-08-16
CN1833293A (zh) 2006-09-13
EP2045817B1 (de) 2010-12-22
KR100656066B1 (ko) 2006-12-11

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