ATE470842T1 - Verbesserte strahlungsenergiemesseinrichtung mit zwei positionen - Google Patents
Verbesserte strahlungsenergiemesseinrichtung mit zwei positionenInfo
- Publication number
- ATE470842T1 ATE470842T1 AT04816513T AT04816513T ATE470842T1 AT E470842 T1 ATE470842 T1 AT E470842T1 AT 04816513 T AT04816513 T AT 04816513T AT 04816513 T AT04816513 T AT 04816513T AT E470842 T1 ATE470842 T1 AT E470842T1
- Authority
- AT
- Austria
- Prior art keywords
- improved
- measurement device
- radiation energy
- energy measurement
- radiant energy
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 239000012528 membrane Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Measurement Of Radiation (AREA)
- Radiation-Therapy Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0351000A FR2863357B1 (fr) | 2003-12-08 | 2003-12-08 | Dispositif de mesure d'energie rayonnante ameliore a deux positions |
PCT/FR2004/050659 WO2005057148A1 (fr) | 2003-12-08 | 2004-12-06 | Dispositif de mesure d'energie rayonnante ameliore a deux positions. |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE470842T1 true ATE470842T1 (de) | 2010-06-15 |
Family
ID=34586455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04816513T ATE470842T1 (de) | 2003-12-08 | 2004-12-06 | Verbesserte strahlungsenergiemesseinrichtung mit zwei positionen |
Country Status (6)
Country | Link |
---|---|
US (1) | US7541585B2 (de) |
EP (1) | EP1692475B1 (de) |
AT (1) | ATE470842T1 (de) |
DE (1) | DE602004027654D1 (de) |
FR (1) | FR2863357B1 (de) |
WO (1) | WO2005057148A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4441578B2 (ja) * | 2006-10-11 | 2010-03-31 | パナソニック株式会社 | 電子デバイスおよびその制御方法 |
EP2015046A1 (de) * | 2007-06-06 | 2009-01-14 | Infineon Technologies SensoNor AS | Vakuumsensor |
US7851759B2 (en) | 2007-06-21 | 2010-12-14 | Alcatel-Lucent Usa Inc. | Infrared imaging apparatus |
KR100925214B1 (ko) * | 2007-11-29 | 2009-11-06 | 한국전자통신연구원 | 볼로미터 및 그 제조 방법 |
US7842923B2 (en) * | 2008-07-28 | 2010-11-30 | Alcatel-Lucent Usa Inc. | Thermal actuator for an infrared sensor |
JP2013506137A (ja) * | 2009-09-24 | 2013-02-21 | プロトチップス,インコーポレイテッド | 電子顕微鏡において温度制御デバイスを用いる方法 |
JP2011153871A (ja) * | 2010-01-26 | 2011-08-11 | Seiko Epson Corp | 熱型光検出器、熱型光検出装置及び電子機器 |
WO2013011753A1 (ja) * | 2011-07-21 | 2013-01-24 | コニカミノルタホールディングス株式会社 | 熱センサ |
CN113588231A (zh) * | 2021-07-14 | 2021-11-02 | 江苏汉皇安装集团有限公司 | 用于机电设备安装的底座固定机构及方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5017784A (en) * | 1985-03-11 | 1991-05-21 | Savin Corporation | Thermal detector |
US4695715A (en) * | 1985-12-12 | 1987-09-22 | Northrop Corporation | Infrared imaging array employing metal tabs as connecting means |
US5397897A (en) * | 1992-04-17 | 1995-03-14 | Terumo Kabushiki Kaisha | Infrared sensor and method for production thereof |
US5436450A (en) * | 1994-01-13 | 1995-07-25 | Texas Instruments Incorporated | Infrared detector local biasing structure and method |
FR2752299B1 (fr) * | 1996-08-08 | 1998-09-11 | Commissariat Energie Atomique | Detecteur infrarouge et procede de fabication de celui-ci |
US6900440B2 (en) * | 2000-02-24 | 2005-05-31 | University Of Virginia Patent Foundation | High sensitivity infrared sensing apparatus and related method thereof |
US6690014B1 (en) * | 2000-04-25 | 2004-02-10 | Raytheon Company | Microbolometer and method for forming |
-
2003
- 2003-12-08 FR FR0351000A patent/FR2863357B1/fr not_active Expired - Fee Related
-
2004
- 2004-12-06 US US10/581,970 patent/US7541585B2/en not_active Expired - Fee Related
- 2004-12-06 WO PCT/FR2004/050659 patent/WO2005057148A1/fr active Application Filing
- 2004-12-06 AT AT04816513T patent/ATE470842T1/de not_active IP Right Cessation
- 2004-12-06 DE DE602004027654T patent/DE602004027654D1/de active Active
- 2004-12-06 EP EP04816513A patent/EP1692475B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
EP1692475B1 (de) | 2010-06-09 |
FR2863357A1 (fr) | 2005-06-10 |
EP1692475A1 (de) | 2006-08-23 |
WO2005057148A1 (fr) | 2005-06-23 |
US7541585B2 (en) | 2009-06-02 |
DE602004027654D1 (de) | 2010-07-22 |
FR2863357B1 (fr) | 2006-05-05 |
US20070116086A1 (en) | 2007-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200625420A (en) | Method for making a semiconductor device | |
TW200713529A (en) | Semiconductor device and its manufacturing method | |
WO2005013339A3 (en) | Methods of forming conductive structures including titanium-tungsten base layers and related structures | |
KR970003772A (ko) | 필름 캐리어, 필름 캐리어를 사용한 반도체 장치 및 반도체 소자를 장착하는 방법 | |
CN105590916B (zh) | 晶片封装体及其制造方法 | |
ATE470842T1 (de) | Verbesserte strahlungsenergiemesseinrichtung mit zwei positionen | |
DK1450404T3 (da) | Indretning i trykkontakt med et effekthalvledermodul | |
WO2006068937A3 (en) | A method and system for producing signals to test semiconductor devices | |
WO2008057671A3 (en) | Electronic device including a conductive structure extending through a buried insulating layer | |
TW200721432A (en) | Semiconductor device, fabrication method therefor, and film fabrication method | |
WO2007050608A3 (en) | Testing and recovery in a multilayer device | |
TW200613867A (en) | Electrooptical device, mounting structure, and electronic apparatus | |
TW200518354A (en) | Device package and methods for the fabrication and testing thereof | |
TW200725880A (en) | Semiconductor piezoresistive sensor and operation method thereof | |
WO2007122560A3 (en) | Semiconductor substrate temperature determination | |
WO2008008581A3 (en) | An electronics package with an integrated circuit device having post wafer fabrication integrated passive components | |
TW200618162A (en) | Methods for fabricating semiconductor devices | |
SG87769A1 (en) | Direct attachment of semiconductor chip to organic substrate | |
TW200631150A (en) | Semiconductor device, display module, and manufacturing method of semiconductor device | |
WO2006053036A3 (en) | Non-circular via holes for bumping pads and related structures | |
WO2008127269A3 (en) | A method and apparatus for attaching a fluid cell to a planar substrate | |
WO2006008701A3 (en) | Assembly and method of placing the assembly on an external board | |
CN105590911B (zh) | 晶片封装体及其制造方法 | |
MX2007003615A (es) | Circuito integrado y metodo de fabricacion. | |
TW200725780A (en) | Making method for semiconductor integrated circuit apparatus and probe card |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |