ATE441942T1 - COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF - Google Patents

COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF

Info

Publication number
ATE441942T1
ATE441942T1 AT07755589T AT07755589T ATE441942T1 AT E441942 T1 ATE441942 T1 AT E441942T1 AT 07755589 T AT07755589 T AT 07755589T AT 07755589 T AT07755589 T AT 07755589T AT E441942 T1 ATE441942 T1 AT E441942T1
Authority
AT
Austria
Prior art keywords
indium
copper
based photovoltaic
diselenide
production method
Prior art date
Application number
AT07755589T
Other languages
German (de)
Inventor
Nicole R Anderson
Dimitris Elias Katsoulis
Herschel Henry Reese
Bizhong Zhu
Lawrence M Woods
Joseph H Armstrong
Rosine M Ribelin
Original Assignee
Dow Corning
Itn Energy Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning, Itn Energy Systems Inc filed Critical Dow Corning
Application granted granted Critical
Publication of ATE441942T1 publication Critical patent/ATE441942T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.
AT07755589T 2006-04-18 2007-04-18 COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF ATE441942T1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79287106P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
PCT/US2007/009365 WO2007123901A1 (en) 2006-04-18 2007-04-18 Copper indium diselenide-based photovoltaic device and method of preparing the same

Publications (1)

Publication Number Publication Date
ATE441942T1 true ATE441942T1 (en) 2009-09-15

Family

ID=38434788

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07755589T ATE441942T1 (en) 2006-04-18 2007-04-18 COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF

Country Status (9)

Country Link
US (1) US20090084427A1 (en)
EP (1) EP2016625B1 (en)
JP (2) JP2009534841A (en)
KR (1) KR20090005184A (en)
CN (1) CN101473448B (en)
AT (1) ATE441942T1 (en)
DE (1) DE602007002297D1 (en)
ES (1) ES2328873T3 (en)
WO (1) WO2007123901A1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006088645A1 (en) 2005-02-16 2006-08-24 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
US8092910B2 (en) 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
EP1910471B1 (en) 2005-08-04 2012-06-06 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
CN101356237B (en) 2005-12-21 2011-06-29 陶氏康宁公司 Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
KR100753959B1 (en) * 2006-01-12 2007-08-31 에이펫(주) Drying method using apparatus for drying substrate
CN101346417B (en) 2006-01-19 2012-01-25 陶氏康宁公司 Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
WO2007097835A2 (en) 2006-02-20 2007-08-30 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US20090090413A1 (en) * 2006-04-18 2009-04-09 Dimitris Elias Katsoulis Cadmium Telluride-Based Photovoltaic Device And Method Of Preparing The Same
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
KR20090120484A (en) 2007-02-22 2009-11-24 다우 코닝 코포레이션 Composite article having excellent fire and impact resistance and method of making the same
JP5426402B2 (en) 2007-02-22 2014-02-26 ダウ コーニング コーポレーション Reinforced silicone resin film
US20090013292A1 (en) * 2007-07-03 2009-01-08 Mentor Graphics Corporation Context dependent timing analysis and prediction
JP5485896B2 (en) 2007-10-12 2014-05-07 ダウ コーニング コーポレーション Aluminum oxide dispersion and method for preparing the same
KR100933193B1 (en) * 2007-12-18 2009-12-22 에스엔유 프리시젼 주식회사 Thin film manufacturing apparatus and thin film manufacturing method
JP5738601B2 (en) * 2008-03-05 2015-06-24 ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド Buffer layer deposition for thin film solar cells.
JP5242499B2 (en) * 2009-05-25 2013-07-24 シャープ株式会社 SOLAR CELL MODULE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE MOUNTED WITH THE SOLAR CELL MODULE
US8721930B2 (en) * 2009-08-04 2014-05-13 Precursor Energetics, Inc. Polymeric precursors for AIGS silver-containing photovoltaics
US8585936B2 (en) * 2009-08-04 2013-11-19 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled group 11 stoichiometry
WO2011017236A2 (en) * 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for cis and cigs photovoltaics
KR101121476B1 (en) * 2010-02-08 2012-03-13 영남대학교 산학협력단 Preparation method of copper indium diselenide thin film for solar cell using continuous flow reaction process
KR101114685B1 (en) * 2010-02-08 2012-04-17 영남대학교 산학협력단 Preparation method of copper indium disulfide thin film for solar cell using continuous flow reaction process
JP5454214B2 (en) * 2010-02-22 2014-03-26 Ｔｄｋ株式会社 Method for producing compound semiconductor buffer layer and method for producing compound semiconductor thin film solar cell
US8828787B2 (en) 2010-09-15 2014-09-09 Precursor Energetics, Inc. Inks with alkali metals for thin film solar cell processes
FR2972299B1 (en) * 2011-03-01 2016-11-25 Commissariat Energie Atomique METHOD FOR MONOLITHIC ELECTRICAL STORAGE OF PHOTOVOLTAIC CELLS OF A SOLAR MODULE AND PHOTOVOLTAIC MODULE USING THE SAME
US9209322B2 (en) * 2011-08-10 2015-12-08 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
US9780242B2 (en) 2011-08-10 2017-10-03 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
US20130061927A1 (en) 2011-08-10 2013-03-14 Ascent Solar Technologies, Inc. Multilayer Thin-Film Back Contact System For Flexible Photoboltaic Devices On Polymer Substrates
DE102011089776B4 (en) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detector element, radiation detector, medical device and method for producing such a detector element
KR101315311B1 (en) 2012-07-13 2013-10-04 한국에너지기술연구원 Back contact and cis-based solar cell comprising the same
CN112309440B (en) * 2020-10-21 2022-04-26 西北工业大学 Optical storage device based on platinum-two-dimensional indium selenide-few-layer graphite Schottky diode and storage method

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131800C (en) * 1965-05-17
DE2709094C2 (en) * 1977-03-02 1984-11-22 Boehringer Mannheim Gmbh, 6800 Mannheim Adsorbent for affinity-specific separation of nucleic acids, process for its preparation and its use
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314956A (en) * 1980-07-23 1982-02-09 Dow Corning Corporation High yield silicon carbide pre-ceramic polymers
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4542257A (en) * 1984-04-27 1985-09-17 Hughes Aircraft Company Solar cell array panel and method of manufacture
US4720856A (en) * 1986-09-02 1988-01-19 Motorola, Inc. Control circuit having a direct current control loop for controlling the gain of an attenuator
JPS62295468A (en) * 1987-05-29 1987-12-22 Semiconductor Energy Lab Co Ltd Photoelectric convertor
US4766176A (en) * 1987-07-20 1988-08-23 Dow Corning Corporation Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts
JPH0214244A (en) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd Thermosetting organopolysiloxane composition
DE4217432A1 (en) * 1992-05-26 1993-12-02 Inst Neue Mat Gemein Gmbh Process for the production of glass with improved long-term durability at elevated temperatures
JP3169148B2 (en) * 1992-09-30 2001-05-21 三井化学株式会社 Fire protection glass
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
DE4423195A1 (en) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxide-transition metal complexes as hydrosilylation catalysts
JP3825843B2 (en) * 1996-09-12 2006-09-27 キヤノン株式会社 Solar cell module
EP0850998B1 (en) * 1996-12-31 2004-04-28 Dow Corning Corporation Method for making rubber-modified rigid silicone resins and composites produced therefrom
DE19731416C1 (en) * 1997-07-22 1998-09-17 Vetrotech Saint Gobain Int Ag Fire protection glazing filled with hardened hydrated alkali poly:silicate avoiding localised delamination in fire
JPH11135820A (en) * 1997-08-27 1999-05-21 Canon Inc Solar battery module and reinforcing member therefor
JPH11289103A (en) * 1998-02-05 1999-10-19 Canon Inc Semiconductor device and solar cell module and their overhauling methods
JP2000086364A (en) * 1998-06-30 2000-03-28 Toshiba Corp Composite material board for solar battery, and solar battery
US6447922B1 (en) 2000-11-20 2002-09-10 General Electric Company Curable silicon adhesive compositions
US6846852B2 (en) * 2001-08-16 2005-01-25 Goldschmidt Ag Siloxane-containing compositions curable by radiation to silicone elastomers
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US6660395B2 (en) * 2002-03-12 2003-12-09 Dow Corning Corporation Silicone resin based composites interleaved for improved toughness
JP4055053B2 (en) * 2002-03-26 2008-03-05 本田技研工業株式会社 Compound thin film solar cell and manufacturing method thereof
WO2003099912A1 (en) * 2002-05-27 2003-12-04 Nitto Denko Corporation Resin sheet and liquid-crystal cell substrate comprising the same
JP3919001B2 (en) 2002-08-08 2007-05-23 信越化学工業株式会社 Addition reaction curable organopolysiloxane composition
US7037592B2 (en) * 2003-02-25 2006-05-02 Dow Coming Corporation Hybrid composite of silicone and organic resins
US20070160936A1 (en) * 2003-06-23 2007-07-12 Gardner Geoffrey B Adhesion method using gray-scale photolithography
US20070111014A1 (en) * 2003-08-01 2007-05-17 Dow Corning Corporation Silicone based dielectric coatings and films for photovoltaic applications
JP2005089671A (en) 2003-09-19 2005-04-07 Shin Etsu Chem Co Ltd Curable silicone resin composition
JP4503271B2 (en) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 Method for producing silicone laminate
PT1726046E (en) * 2004-03-16 2007-10-01 Vhf Technologies Sa Electric energy generating modules with a two-dimensional profile and method of fabricating the same
US8716592B2 (en) * 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
JP2008520101A (en) * 2004-11-10 2008-06-12 デイスター テクノロジーズ，インコーポレイティド Thermal process for producing in-situ bonding layers in CIGS
US7196262B2 (en) * 2005-06-20 2007-03-27 Solyndra, Inc. Bifacial elongated solar cell devices

Also Published As

Publication number Publication date
US20090084427A1 (en) 2009-04-02
EP2016625A1 (en) 2009-01-21
ES2328873T3 (en) 2009-11-18
WO2007123901A1 (en) 2007-11-01
EP2016625B1 (en) 2009-09-02
JP2009534841A (en) 2009-09-24
DE602007002297D1 (en) 2009-10-15
KR20090005184A (en) 2009-01-12
CN101473448B (en) 2011-05-11
JP2011171775A (en) 2011-09-01
CN101473448A (en) 2009-07-01

Similar Documents

Publication Publication Date Title
ATE441942T1 (en) COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF
ATE448569T1 (en) COPPER-INDIUM-DISELENIDE-BASED PHOTOVOLTAIC ARRANGEMENT AND PRODUCTION METHOD THEREOF
WO2007120905A3 (en) Cadmium telluride-based photovoltaic device and method of preparing the same
WO2010019532A3 (en) Compositions and processes for forming photovoltaic devices
IL200728A0 (en) Method for the production of a solar cell and solar cell produced using said method
MY173413A (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
MX2012000149A (en) Building-integrated solar-panel roof element systems.
EP2356689A4 (en) Solar cell with a backside via to contact the emitter layer
HK1135795A1 (en) Solar roof tile with solar and photovoltaic production of hot water and electrical energy
EP2481094A4 (en) HIGH POWER EFFICIENCY POLYCRYSTALLINE CdTe THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION
EP2475809A4 (en) Electrochemical method of producing copper indium gallium diselenide (cigs) solar cells
WO2010048543A3 (en) Thin absorber layer of a photovoltaic device
GB2465702A (en) Structurally isolated thermal interface
EP2416376A4 (en) Solar photovoltaic power generation apparatus and manufacturing method thereof
MY166696A (en) Supporting structure for green building facade
WO2008103948A8 (en) Amorphous carbon-containing photovoltaic devices
WO2011040784A3 (en) Solar photovoltaic device
WO2011084926A3 (en) Photovoltaic materials with controllable zinc and sodium content and method of making thereof
IL207095A0 (en) Low concentration solar plant and method for maximizing the electricity production of the photovoltaic modules thereof
EP2416378A4 (en) Solar photovoltaic power generation apparatus and manufacturing method thereof
EP2401448A1 (en) Building cover element with an integrated energy production device
EP2430648A4 (en) Photovolaic device
JP2011253917A5 (en)
WO2011062401A3 (en) Wave power conversion device
EP2461121A4 (en) Solar tracker for rotary high-concentration photovoltaic solar modules for roofs and solar farms

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties