ATE441870T1 - Leistungsdetektor zur verwendung in einem leistungsverstärker - Google Patents

Leistungsdetektor zur verwendung in einem leistungsverstärker

Info

Publication number
ATE441870T1
ATE441870T1 AT02738450T AT02738450T ATE441870T1 AT E441870 T1 ATE441870 T1 AT E441870T1 AT 02738450 T AT02738450 T AT 02738450T AT 02738450 T AT02738450 T AT 02738450T AT E441870 T1 ATE441870 T1 AT E441870T1
Authority
AT
Austria
Prior art keywords
power
sense transistor
collector
transistor
sense
Prior art date
Application number
AT02738450T
Other languages
English (en)
Inventor
Tirdad Sowlati
Sifen Luo
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE441870T1 publication Critical patent/ATE441870T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/10—Arrangements for measuring electric power or power factor by using square-law characteristics of circuit elements, e.g. diodes, to measure power absorbed by loads of known impedance
    • G01R21/12—Arrangements for measuring electric power or power factor by using square-law characteristics of circuit elements, e.g. diodes, to measure power absorbed by loads of known impedance in circuits having distributed constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/10—Arrangements for measuring electric power or power factor by using square-law characteristics of circuit elements, e.g. diodes, to measure power absorbed by loads of known impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
AT02738450T 2001-06-26 2002-06-18 Leistungsdetektor zur verwendung in einem leistungsverstärker ATE441870T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/891,668 US6657425B2 (en) 2001-06-26 2001-06-26 Power measurement circuit including harmonic filter
PCT/IB2002/002332 WO2003001220A1 (en) 2001-06-26 2002-06-18 Power detection circuit for use in a power amplifier

Publications (1)

Publication Number Publication Date
ATE441870T1 true ATE441870T1 (de) 2009-09-15

Family

ID=25398624

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02738450T ATE441870T1 (de) 2001-06-26 2002-06-18 Leistungsdetektor zur verwendung in einem leistungsverstärker

Country Status (8)

Country Link
US (1) US6657425B2 (de)
EP (1) EP1405086B1 (de)
JP (1) JP2004530901A (de)
KR (1) KR101122392B1 (de)
CN (1) CN1271414C (de)
AT (1) ATE441870T1 (de)
DE (1) DE60233570D1 (de)
WO (1) WO2003001220A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563299B1 (en) * 2000-08-30 2003-05-13 Micron Technology, Inc. Apparatus for measuring parasitic capacitance and inductance of I/O leads on an electrical component using a network analyzer
KR100623417B1 (ko) * 2006-02-21 2006-09-13 박홍재 노인 및 재활환자의 보행 보조 장치
KR101466920B1 (ko) * 2013-03-26 2014-12-04 주식회사 우진 출강 모니터링 장치
CN105337583B (zh) * 2014-08-01 2018-10-12 博通集成电路（上海）股份有限公司 功率放大器及其功率放大方法
CN114895102B (zh) * 2022-02-25 2023-05-09 电子科技大学 一种高隔离度输入输出级大动态范围功率检测电路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
JPS63134965A (ja) * 1986-11-11 1988-06-07 シーメンス、アクチエンゲゼルシヤフト 電気的振動回路の測定方法
GB9126616D0 (en) * 1991-12-16 1992-02-12 Texas Instruments Ltd Improvements in or relating to amplifiers
JPH05243259A (ja) * 1992-03-03 1993-09-21 Mitsubishi Electric Corp バイポーラトランジスタ及びその製造方法並びにダーリントントランジスタ及びその製造方法
FI930632A (fi) * 1993-02-12 1994-08-13 Nokia Mobile Phones Ltd Kytkentä lähetinvahvistimen tehon säätämiseksi
US6054898A (en) * 1996-08-30 2000-04-25 Kabushiki Kaisha Kenwood Semiconductor device having SEPP connected NPN and PNP transistors
US6147557A (en) * 1997-11-27 2000-11-14 Nec Corporation Semiconductor circuit compensating for changes in gain slope of the circuit's gain-frequency characteristic caused by ambient temperature changes
KR100301556B1 (ko) * 1999-08-19 2001-11-01 서평원 전력증폭기의 고정밀도 전력검출 장치
US6448855B1 (en) * 2000-04-13 2002-09-10 Koninklijke Philips Electronics N.V. Accurate power detection circuit for use in a power amplifier
US6348818B1 (en) * 2000-08-14 2002-02-19 Ledi-Lite Ltd. Voltage-adder LED driver

Also Published As

Publication number Publication date
KR101122392B1 (ko) 2012-03-27
KR20030029856A (ko) 2003-04-16
CN1271414C (zh) 2006-08-23
DE60233570D1 (de) 2009-10-15
US20020196044A1 (en) 2002-12-26
EP1405086B1 (de) 2009-09-02
JP2004530901A (ja) 2004-10-07
EP1405086A1 (de) 2004-04-07
WO2003001220A1 (en) 2003-01-03
CN1520518A (zh) 2004-08-11
US6657425B2 (en) 2003-12-02

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties