ATE441736T1 - Abscheidungsmaske - Google Patents

Abscheidungsmaske

Info

Publication number
ATE441736T1
ATE441736T1 AT06006552T AT06006552T ATE441736T1 AT E441736 T1 ATE441736 T1 AT E441736T1 AT 06006552 T AT06006552 T AT 06006552T AT 06006552 T AT06006552 T AT 06006552T AT E441736 T1 ATE441736 T1 AT E441736T1
Authority
AT
Austria
Prior art keywords
reinforcing section
holes
separation mask
portions
mask
Prior art date
Application number
AT06006552T
Other languages
English (en)
Inventor
Masanori Tsuruko
Original Assignee
Brother Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Ind Ltd filed Critical Brother Ind Ltd
Application granted granted Critical
Publication of ATE441736T1 publication Critical patent/ATE441736T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
AT06006552T 2005-03-30 2006-03-29 Abscheidungsmaske ATE441736T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005099520 2005-03-30

Publications (1)

Publication Number Publication Date
ATE441736T1 true ATE441736T1 (de) 2009-09-15

Family

ID=36677219

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06006552T ATE441736T1 (de) 2005-03-30 2006-03-29 Abscheidungsmaske

Country Status (4)

Country Link
US (1) US8088435B2 (de)
EP (1) EP1707648B1 (de)
AT (1) ATE441736T1 (de)
DE (1) DE602006008850D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6361162B2 (ja) * 2013-04-23 2018-07-25 Ａｇｃ株式会社 両面低反射膜付ガラス基板の製造方法
CN104611668B (zh) * 2015-01-29 2017-03-01 京东方科技集团股份有限公司 用于掩膜板的框架和掩膜板
CN106086782B (zh) * 2016-06-28 2018-10-23 京东方科技集团股份有限公司 一种掩膜版组件及其安装方法、蒸镀装置
US11066742B2 (en) * 2017-09-28 2021-07-20 Sharp Kabushiki Kaisha Vapor deposition mask
US20190317631A1 (en) * 2018-04-12 2019-10-17 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Metal mesh touch display structure and manufacturing method thereof
CN108611600B (zh) * 2018-08-17 2020-04-14 京东方科技集团股份有限公司 掩膜结构
JP7749925B2 (ja) * 2020-03-13 2025-10-07 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法
CN111411323B (zh) * 2020-03-31 2023-01-20 云谷（固安）科技有限公司 一种掩膜板
US11613802B2 (en) 2020-04-17 2023-03-28 Rockwell Collins, Inc. Additively manufactured shadow masks for material deposition control

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049857A (en) * 1976-07-28 1977-09-20 International Business Machines Corporation Deposition mask and methods of making same
JPS54103552A (en) * 1978-02-01 1979-08-15 Hitachi Electronics Pattern formation method
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
JPH10330910A (ja) 1997-06-04 1998-12-15 Toray Ind Inc シャドーマスクおよびその製造方法
JPH10330911A (ja) 1997-06-05 1998-12-15 Toray Ind Inc シャドーマスクおよびその製造方法
JP2001254169A (ja) 2000-03-13 2001-09-18 Optonix Seimitsu:Kk 蒸着用金属マスクおよび蒸着用金属マスク製造方法
JP4222035B2 (ja) 2003-01-20 2009-02-12 セイコーエプソン株式会社 成膜用精密マスク及びその製造方法、エレクトロルミネッセンス表示装置及びその製造方法、電子機器

Also Published As

Publication number Publication date
US8088435B2 (en) 2012-01-03
DE602006008850D1 (de) 2009-10-15
US20060222965A1 (en) 2006-10-05
EP1707648A2 (de) 2006-10-04
EP1707648A3 (de) 2006-12-06
EP1707648B1 (de) 2009-09-02

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties